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군용레이더 전원공급장치의 p-Channel MOSFET 돌입전류 제한 회로 개선에 관한 연구 A Study on the Improving p-Channel MOSFET Inrush Current Limiter Circuit for the Power Supply Unit of Military Radar

정성빈, 윤재복
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한국기계기술학회지 (韓國機械技術學會誌)
제25권 제5호 (2023.10)
pp.904-910
한국기계기술학회 (Korean Society of Mechanical Technology)
초록

Despite the presence of the p-Channel MOSFET inrush current limiter circuit within the power supply unit of military radar, The internal MOSFET and DC-DC Converter has been damaged due to the high inrush current. In this paper, the cause of the high inrush current was identified by analyzing the p-Channel MOSFET inrush current limiter circuit. Based on the analysis, the high inrush current was reduced by about 60% by adjusting the time constant of the source-to-gate elements compared to before improvement.

키워드
MOSFET(금속 산화물 반도체 전계 효과 트랜지스터)Inrush current limiter(돌입전류 제한기)Inrush current(돌입전류)Time constant(시정수)
저자
  • 정성빈(국방기술품질원) | Sung-Bin Jung (Defence Agency for Technology and Quality) Corresponding author
  • 윤재복(국방기술품질원) | Jae-Bok Yoon (Defence Agency for Technology and Quality)