사파이어 단결정 성장에 관한 연구 Research on Sapphire Single Crystal Growth
한국기계기술학회지
(韓國機械技術學會誌)
제25권 제6호
(2023.12)
pp.974-978
pp.974-978
한국기계기술학회
(Korean Society of Mechanical Technology)
초록
This study aimed to grow single crystals with low dislocation density using a heat exchange method using room temperature water, and investigated the effect of the structure of the heat exchanger under the crucible on the defects and dislocation density of the single crystals and the shape of the solid-liquid interface of the crystals, and obtained the following conclusions. The dislocation density of sapphire single crystal grown at 2,200℃ for 30 min and a growth rate of 0.2℃/min was 0.92x103pcs/㎠. Mo guard was used to stabilize the solid-liquid interface grown from seeds, and sapphire single crystals with a diameter of 130㎜ and a height of 75㎜ were grown.
저자