고효율 InP 양자점을 이용한 교통표지 Traffic Sign using High Efficiency InP Quantum Dots
- 언어KOR
- URLhttp://db.koreascholar.com/Article/Detail/444577
pp.201-205
In this study, high-efficiency InZnP/ZnSe/ZnS quantum dots (QDs) were synthesized and applied to the development of self-luminous traffic signs. The synthesized QDs exhibited a photoluminescence (PL) peak wavelength of 613 nm and a uniform nanoparticle size of 6 nm in diameter. Quantum dot films were coated using a roll-to-roll process with varying thicknesses (110 μm, 85 μm, and 75 μm), and color coordinate analysis confirmed that all films fell within the red region. A 4CL resin and PCB with high thermal dissipation properties were employed to fabricate the self-luminous traffic signs. Performance evaluations showed a white luminance of 625.4 cd/㎡, a red luminance of 220.2 cd/㎡, an insulation resistance of 10,000 MΩ, and an insulation breakdown voltage of 500V, indicating excellent performance. This study confirms the potential of InZnP-based QDs as an environmentally friendly alternative to conventional Cd-based QDs. Furthermore, the integration of high-efficiency QD films with advanced heat-dissipating PCB technology is expected to improve traffic safety, particularly in low-visibility and nighttime environments
1. 서 론
2. 연구 방법
2.1. InZnP/ZnSe/ZnS 양자점
2.2. InZnP 양자점 필름
2.3. InZnP 양자점 필름 을 이용한 교통표지
3. 연구 결과
4. 결 론
후 기
References