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(N-docosyl quinolinium)-TCNQ(1:2) 전하 이동 착물 Langmuir-Blodgett막의 누적 및 전기적 특성 KCI 등재

Deposition and Electrical Properties of (N-docosyl quinoliniurm)-TCNQ(1:2) Charge Transfer Complex Langmuir-Blodgett Films

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  • URLhttps://db.koreascholar.com/Article/Detail/257268
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한국응용과학기술학회지 (The Korean Society of Applied Science and Technology)
한국응용과학기술학회(구 한국유화학회) (The Korean Society of Applied Science and Technology (KSAST))
초록

In this study, ultra-thin films of (N-docosyl quinolinium)-TCNQ(1:2) complex were prepared on the hydrophilic substrate by Langmuir-Blodgett(LB) technique. The characteristics of π-A isotherms were studied to find optimum conditions of deposition by varying temperature of subphase, compression speed of barrier and amount of spreading solution. Using UV-vis spectra, capacitance and thickness, deposition of LB films was confirmed together with the thickness of the naturally oxidized aluminum film inside a device and dielectric constant of (N-docosyl quinolinium)-TCNQ(1:2) complex. The dielectric constant of LB film was about 4.59~5.58. The electrical properties of (N-docosyl quinolinium)-TCNQ(1:2) complex were investigated at room temperature. The conductivity of this film measured by the direction of either vertical or horizontal axis was found to have a quite different value.

저자
  • 정순욱 | Jeong, Soon-Wook
  • 정회걸 | Jeong, Hwae-Gul