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Eicosanoic Acid Langmuir-Blodgett(LB) 박막을 이용한 분자 다이오드의 전기적 특성 KCI 등재

Electrical Properties of Molecular Diode Using Eicosanoic Acid Langmuir-Blodgett(LB) Monolayer Film

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  • URLhttps://db.koreascholar.com/Article/Detail/257409
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한국응용과학기술학회지 (The Korean Society of Applied Science and Technology)
한국응용과학기술학회(구 한국유화학회) (The Korean Society of Applied Science and Technology (KSAST))
초록

Electron transfer through an Langmuir-Blodgett(LB) monolayer film sandwiched between metal electrodes. We used an eicosanoic acid material and the material was very famous as a thin film insulating material. Eicosanoic acid monolayer was deposited by Langmuir-Blodgett(LB) technique and a subphase was a CdCl2 solution as a 2×10-4 mol/L. Also we used a bottom electrode as an Al/Al2O3 and a top electrode as a Al and Ti/Al. Here, the Al2O3 on the bottom electrode was deposited by thermal evaporation method. The Al2O3 layer was acted on a tunneling barrier and insulating layer in tunnel diode. It was found that the proper transfer surface pressure for film deposition was 25 mN/m and the limiting area per molecule was about 24 a2/molecule. When the positive and negative bias applied to the molecular device, the behavior shows that a tunnel switching characteristics. This result were analyzed regarding various mechanisms.

저자
  • 구자룡 | Koo, Ja-Ryong
  • 이호식 | Lee, Ho-Sik
  • 권혁주 | Kwon, Hyuck-Joo
  • 손병청 | Sohn, Byoung-Chung