Taguchi methodology has been applied to get an idea about the parameters related to the chemical vapour deposition technique, which influences the formation of semiconducting carbon thin film of a desired band gap. L9 orthogonal array was used for this purpose. The analysis based on Taguchi methodology suggests that amongst the parameters selected, the temperature of pyrolysis significantly controls the magnitude of band gap (46%). Sintering time has a small influence (30%) on the band gap formation and other factors have almost no influence on the band gap formation. Moreover this analysis suggests that lower temperature of pyrolysis (≤ 750℃) and lower time of sintering (≤ 1 h) should be preferred to get carbon thin film with the desired band gap of 1.2eV.

• D.K. Mishra(Department of Chemistry, Indian Institute of Technology)
• N. Bejoy(Department of Chemistry, Indian Institute of Technology)
• Maheshwar. Sharon(Nanotechnology Research lab, Birla College)