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The effect of DNA chain length and chemical structure of the surfactant molecule on the properties of the DNA-based Bio-organic field effect transistor memory

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한국화상학회지 (Journal of Korean Society for Imaging Science and Technology)
한국화상학회 (Korean Society for Imaging Science and Technology)
초록

The bio-organic thin film transistor (BiOTFT) with the DNA and DNA-surfactant complex as a
dielectric layer shows memory function. In order to investigate the effect of surfactant structure on the OTFT memory device performance, different kinds of surfactant were introduced. The octadecyltrimethylammonium chloride (OTMA), ctyltrimethylammonium chloride (CTMA), or lauroylcholine chloride (Lau) as cationic surfactant as mixed with DNA to prepare the DNA complex through the electrostatic interaction. In addition, the different molecular weight DNA also has been studied to analyze the effect of DNA chain length on the performance of the physical property. Many kinds of methods including UV-vis, Circular dichiroism (CD), I-V characteristic and atomic force microscope (AFM) have been applied to analyze the property of DNA complex. In conclusion, all of DNA complex with CTMA, OTMA and Lau revealed to work as the bio-organic thin film transistor memory, and the device fabricated by Lau has the highest ON current and showed better device performance.

목차
1. Introduction
 2. Experiments
  2.1. Materials
  2.2. Preparation of DNA surfactant complex
  2.3. Preparation of DNA and DNA surfactant complex solution and film
  2.4. The preparation of OTFT memory
 3. Results and discussion
  3.1. UV absorption spectra of the DNAcomplex
  3.2. CD spectra of the DNA complex
  3.3. I-V properties of the DNA complex film
  3.4. AFM of the DNA complex film
  3.5. Transfer characteristics of the BiOTFTs
 4. Conclusions
 Reference
저자
  • Lijuan Liang(Department of image & Materials science, Graduate School of Advanced Integration Science)
  • Yasushi Mitsumura(Department of image & Materials science, Graduate School of Advanced Integration Science)
  • Tomoyashi Yukimoto(Department of image & Materials science, Graduate School of Advanced Integration Science)
  • Sei Uemura(Flexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology)
  • Toshihide Kamata(Flexible Electronics Research Center, National Institute of Advanced Industrial Science and Technology)
  • Kazuki Nakamura(Department of image & Materials science, Graduate School of Advanced Integration Science)
  • Norihisa Kobayash(Department of image & Materials science, Graduate School of Advanced Integration Science)