Aluminum nitride having a dense hexagonal structure is used as a high-temperature material because of its excellent heat resistance and high mechanical strength; its excellent piezoelectric properties are also attracting attention. The structure and residual stress of AlN thin films formed on glass substrate using TFT sputtering system are examined by XRD. The deposition conditions are nitrogen gas pressures of 1 × 102, 6 × 103, and 3 × 103, substrate temperature of 523 K, and sputtering time of 120 min. The structure of the AlN thin film is columnar, having a c-axis, i.e., a <00·1> orientation, which is the normal direction of the glass substrate. An X-ray stress measurement method for crystalline thin films with orientation properties such as columnar structure is proposed and applied to the residual stress measurement of AlN thin films with orientation <00·1>. Strength of diffraction lines other than 00·2 diffraction is very weak. As a result of stress measurement using AlN powder sample as a comparative standard sample, tensile residual stress is obtained when the nitrogen gas pressure is low, but the gas pressure increases as the residual stress is shifts toward compression. At low gas pressure, the unit cell expands due to the incorporation of excess nitrogen atoms.

1. 서 론
2. 이방성 재료의 응력-변형 관계식
    2.1. 응력과 변형과의 관계
    2.2. 결정조직상태 및 회절선과 좌표 간의 관계
    2.3. 스퍼터링 방법으로 제작한 AlN 박막의 잔류응력 해석법
3. 실험방법
    3.1. TFT (Two-Facing-Targets) 스퍼터 장치
    3.2. AlN 박막의 제작
    3.3. X선을 이용한 AlN박막의 조직형태 및 잔류응력 측정
4. 결과 및 고찰
    4.1. 기판상의 AlN박막의 조직형태
    4.2. AlN박막의 잔류응력측정
5. 결 론
References

• 한창석(호서대학교 자동차ICT공학과) | Chang-Suk Han (Dept. of ICT Automotive Engineering, Hoseo University, 201, Sandan7-ro, Seongmun-myeon, Dangjin City, Chungnam 31702, Republic of Korea)
• 권용준(호서대학교 자동차ICT공학과) | Yong-Jun Kwon (Dept. of ICT Automotive Engineering, Hoseo University, 201, Sandan7-ro, Seongmun-myeon, Dangjin City, Chungnam 31702, Republic of Korea)