한국재료학회지 제27권 제3호 (p.149-154)

Sn-Doped In2O3 나노잉크를 위한 나노로드의 복합화에 따른 용액기반 투명 전도성 산화물의 저온성능

Low-Temperature Performance of Solution-Based Transparent Conducting Oxides Depending on Nanorod Composite for Sn-Doped In2O3 Nanoinks
키워드 :
solution-based transparent conducting oxides,Sn-doped In2O3,nanoinks,nanorods,low annealing temperature.

초록

Transparent conducting oxides (TCOs) were fabricated using solution-based ITO (Sn-doped In2O3) nanoinks with nanorods at an annealing temperature of 200 oC. In order to optimize their transparent conducting performance, ITO nanoinks were composed of ITO nanoparticles alone and the weight ratios of the nanorods to nanoparticles in the ITO nanoinks were adjusted to 0.1, 0.2, and 0.5. As a result, compared to the other TCOs, the ITO TCOs formed by the ITO nanoinks with weight ratio of 0.1 were found to exhibit outstanding transparent conducting performance in terms of sheet resistance (~102.3 Ω/square) and optical transmittance (~80.2%) at 550 nm; these excellent properties are due to the enhanced Hall mobility induced by the interconnection of the composite nanorods with the (440) planes of the short lattice distance in the TCOs, in which the presence of the nanorods can serve as a conducting pathway for electrons. Therefore, this resulting material can be proposed as a potential candidate for solution-based TCOs for use in optoelectronic devices requiring large-scale and low-cost processes.