In this study, the surface passivation process for InP-based quantum dots (QDs) is investigated. Surface coating is performed with poly(methylmethacrylate) (PMMA) and thioglycolic acid. The quantum yield (QY) of a PMMA-coated sample slightly increases by approximately 1.3% relative to that of the as-synthesized InP/ZnS QDs. The QYs of the uncoated and PMMA-coated samples drastically decrease after 16 days because of the high defect state density of the InP-based QDs. PMMA does not have a significant effect on the defect passivation. Thioglycolic acid is investigated in this study for the effective surface passivation of InP-based QDs. Surface passivation with thioglycolic acid is more effective than that with the PMMA coating, and the QY increases from 1.7% to 11.3%. ZnS formed on the surface of the InP QDs and S in thioglycolic acid show strong bonding property. Additionally, the QY is further increased up to 21.0% by the photochemical reaction. Electron–hole pairs are formed by light irradiation and lead to strong bonding between the inorganic and thioglycolic acid sulfur. The surface of the InP core QDs, which does not emit light, is passivated by the irradiated light and emits green light after the photochemical reaction.

1. 서 론
 2. 실험 방법
 3. 결과 및 고찰
 4. 결 론
 References

• 김도연(단국대학교 에너지공학과) | Doyeon Kim
• 박현수(단국대학교 에너지공학과) | Hyun-Su Park
• 조혜미(한국생산기술연구원 한국희소금속산업기술센터) | Hye Mi Cho
• 김범성(한국생산기술연구원 한국희소금속산업기술센터) | Bum-Sung Kim
• 김우병(단국대학교 에너지공학과) | Woo-Byoung Kim Corresponding Author