한국폐기물자원순환학회지 제35권 제3호 (p.250-257)

플라즈마 이용 반도체 공정의 과불화화합물(NF3, CF4, SF6) 분해 연구

A Study on Decomposition of Perfluorocompounds (NF3, CF4, SF6) Emitted from Semiconductor Process using Plasma
키워드 :
Plasma,Perfluorocompounds,Semiconductor process,NF3,CF4,SF6

목차

Abstract
I. 서 론
II. 실험방법
  1. 실험장치 구성
  2. 실험 및 분석방법
III. 결과 및 고찰
  1. PFCs DRE
  2. PFCs의 가스상 부산물
  3. PFCs의 입자상 부산물
IV. 결 론
References

초록

PFC (perfluorocompound) gases have an extremely high global warming potential (GWP). A study of the destruction of NF3, CF4 and SF6 gases emitted from the semiconductor industry was attempted by plasma power at 4.4 kW, 5.5 kW, 6.0 kW, 6.6 kW, 7.6 kW, 8.1 kW and 9.1 kW. As electric power increased, DRE (destruction and removal efficiency) of NF3, CF4 and SF6 was also increased. It was confirmed through experiment that the DRE of NF3 is 99% at 7.6 kW, 97% for CF4 at 9.14 kW and 100% for SF6 at 7.6 kW of plasma power. By-products formed by PFC destruction were mainly F2, SO2F2, NOx and CO gases. In addition, particulate matter was formed, and particle were proven to be AlF3.