A boron-doped diamond(BDD) electrode is attractive for many electrochemical applications due to its distinctive properties: an extremely wide potential window in aqueous and non-aqueous electrolytes, a very low and stable background current and a high resistance to surface fouling. An Ar gas mixture of H2, CH4 and trimethylboron (TMB, 0.1 % C3H9B in H2) is used in a hot filament chemical vapor deposition(HFCVD) reactor. The effect of argon addition on quality, structure and electrochemical property is investigated by scanning electron microscope(SEM), X-ray diffraction(XRD) and cyclic voltammetry(CV). In this study, BDD electrodes are manufactured using different Ar/CH4 ratios (Ar/CH4 = 0, 1, 2 and 4). The results of this study show that the diamond grain size decreases with increasing Ar/CH4 ratios. On the other hand, the samples with an Ar/CH4 ratio above 5 fail to produce a BDD electrode. In addition, the BDD electrodes manufactured by introducing different Ar/CH4 ratios result in the most inclined to (111) preferential growth when the Ar/CH4 ratio is 2. It is also noted that the electrochemical properties of the BDD electrode improve with the process of adding argon.

Abstract
 1. 서 론
 2. 실험 방법
  2.1 실험재료
  2.2 실험방법
 3. 결과 및 고찰
  3.1 BDD 박막의 미세구조 분석 결과
  3.2 BDD 박막의 상(phase)분석 결과
  3.3 순환전압전류(CV) 테스트 결과
  3.4 총유기탄소(TOC) 제거 테스트 결과
 4. 결 론
 References

• 최용선(위덕대학교 일반대학원 정보전자공학과) | Yong-Sun Choi (Dept. of Information & Electronics Engineering, Uiduk University)
• 이영기(위덕대학교 그린에너지공학부) | Young-Ki Lee (Division of Green Energy Engineering, Uiduk University)
• 김정열(위덕대학교 그린에너지공학부) | Jung-Yuel Kim (Division of Green Energy Engineering, Uiduk University)
• 이유기(위덕대학교 그린에너지공학부) | You-Kee Lee (Division of Green Energy Engineering, Uiduk University) Corresponding author