The effects of fast neutron irradiation on the electrical and optical properties of Li (3 at%) doped ZnSnO (ZTO) thin films fabricated using a sol-gel process are investigated. From the results of Li-ZTO TFT characteristics according to change of neutron irradiation time, the saturation mobility is found to increase and threshold voltage values shift to a negative direction from 1,000 s neutron irradiation time. X-ray photoelectron spectroscopy analysis of the O 1s core level shows that the relative area of oxygen vacancies is almost unchanged with different irradiation times. From the results of band alignment, it is confirmed that, due to the increase of electron carrier concentration, the Fermi level (EF) of the sample irradiated for 1,000 s is located at the position closest to the conduction band minimum. The increase in electron concentration is considered by looking at the shallow band edge state under the conduction band edge formed by fast neutron irradiation of more than 1,000 s.

Abstract
1. 서 론
2. 실험 방법
3. 결과 및 고찰
4. 결 론
References

• 조인환(한국원자력연구원 신소재융합기술연구부) | In-Hwan Cho (Advanced Materials Research Division, Korea Atomic Energy Research Institute)
• 김찬중(한국원자력연구원 신소재융합기술연구부) | Chan-Joong Kim (Advanced Materials Research Division, Korea Atomic Energy Research Institute)
• 전병혁(한국원자력연구원 신소재융합기술연구부) | Byung-Hyuk Jun (Advanced Materials Research Division, Korea Atomic Energy Research Institute) Corresponding author