Graphene has attracted the interest of many researchers due to various its advantages such as high mobility, high transparency, and strong mechanical strength. However, large-area graphene is grown at high temperatures of about 1,000 °C and must be transferred to various substrates for various applications. As a result, transferred graphene shows many defects such as wrinkles/ripples and cracks that happen during the transfer process. In this study, we address transfer-free, large-scale, and high-quality monolayer graphene. Monolayer graphene was grown at low temperatures on Ti (10nm)-buffered Si (001) and PET substrates via plasma-assisted thermal chemical vapor deposition (PATCVD). The graphene area is small at low mTorr range of operating pressure, while 4 × 4 cm2 scale graphene is grown at high working pressures from 1.5 to 1.8 Torr. Four-inch wafer scale graphene growth is achieved at growth conditions of 1.8 Torr working pressure and 150 °C growth temperature. The monolayer graphene that is grown directly on the Ti-buffer layer reveals a transparency of 97.4 % at a wavelength of 550 nm, a carrier mobility of about 7,000 cm2/V×s, and a sheet resistance of 98 W/□. Transfer-free, large-scale, high-quality monolayer graphene can be applied to flexible and stretchable electronic devices.

Abstract
1. 서 론
2. 실험방법
    2.1 Ti-buffer layer 위에 그래핀 성장
    2.2 성장된 그래핀의 전기적, 광학적 특성평가
3. 결론 및 고찰
4. 결 론
References

• 한이레(충남대학교 신소재공학과) | Yire Han (Department of Materials Science and Engineering, Chungnam National University)
• 박병주(충남대학교 신소재공학과) | Byeong-Ju Park (Department of Materials Science and Engineering, Chungnam National University)
• 엄지호(충남대학교 신소재공학과) | Ji-Ho Eom (Department of Materials Science and Engineering, Chungnam National University)
• 윤순길(충남대학교 신소재공학과) | Soon-Gil Yoon (Department of Materials Science and Engineering, Chungnam National University) Corresponding author