The optical film for light luminance improvement of back light unit that is used in light emitting diode/liquid crystal display and retro-reflective film is used as luminous sign consist of square and triangular pyramid structure pattern based on V-shape micro prism pattern. In this study, we analyzed machining characteristics of Cu-plated flat mold by shaping with diamond tool. First, cutting conditions were optimized as V-groove machining for the experiment of micro prism structure mold machining with prism pattern shape, cutting force and roughness. Second, the micro prism structure such as square and triangular pyramid pattern were machined by cross machining method with optimizing cutting conditions. Variation of Burr and chip shape were discussed by material properties and machining method.

In the present work, a new synthesis method has been reported for preparing high-quality NaA zeolite membrane. The present method involves pressure-driven hydrothermal gel coating method(HGCM) on seeded α-alumina support surface having pores of 0.1 and 0.7μm diameter before the secondary growth process. The experimental data revealed that the high-pressure injection of hydrothermal gel solution on α-alumina support surface helped in the pore filling and thin layer coating of gel particles, which promoted the formation of uniform, defect free, and dense zeolite layer. Pervaporative dehydration experiments were conducted for 50 wt.% ethanol-water mixture at 343K. The NaA zeolite membrane, which was prepared by HGCM process on the 0.7μm support, showed that the high total flux was 4.7 kg m-2h-1 and separation factor was more than >1000.

Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick ZnSnOx with a resistivity of 10Ω·cm, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.

Presently, the most promising family of lead-free piezoelectric ceramics is based on K0.5Na0.5NbO3(KNN). Lithium, silver and antimony co-doped KNN ceramics show high piezoelectric properties at room temperature, but often suffer from abnormal grain growth. In the present work, the (Ba0.85Ca0.15)(Ti0.88Zr0.12)O3 component, which has relaxor ferroelectric characteristics, was doped to suppress the abnormal grain growth. To investigate this effect, Lead-Free 0.95(K0.5Na0.5)0.95Li0.05NbO3-(0.05-x)AgSbO3-x(Ba0.85Ca0.15)(Ti0.88Zr0.12)O3[KNLN-AS-xBCTZ] piezoelectric ceramics were synthesized by ball mill and nanosized-milling processes in lead-Free 0.95(K0.5Na0.5)0.95Li0.05NbO3-(0.05-x)AgSbO3 in order to suppress the abnormal grain growth. The nanosized milling process of calcined powders enhanced the sintering density. The phase structure, microstructure, and ferroelectric and piezoelectric properties of the KNLN-AS ceramics were systematically investigated. XRD patterns for the doped and undoped samples showed perovskite phase while tetragonality was increased with increasing BCZT content, which increase was closely related to the decrease of TO-T. Dense and uniform microstructures were observed for all of the doped BCZT ceramics. After the addition of BCTZ, the tetragonal-cubic and orthorhombic-tetragonal phase transitions shifted to lower temperatures compared to those for the pure KNNL-AS. A coexistence of the orthorhombic and tetragonal phases was hence formed in the ceramics with x = 0.02 mol at room temperature, leading to a significant enhancement of the piezoelectric properties. For the composition with x = 0.02 mol, the piezoelectric properties showed optimum values of: d33 = 185 pC/N, kp = 41%, Tc=325˚C, TO-T=-4˚C.

The power capacitors used as vehicle inverters must have a small size, high capacitance, high voltage, fast response and wide operating temperature. Our thin film capacitor was fabricated by alumina layers as a dielectric material and a metal electrode instead of a liquid electrolyte in an aluminum electrolytic capacitor. We analyzed the micro structures and the electrical properties of the thin film capacitors fabricated by nano-channel alumina and metal electrodes. The metal electrode was filled into the alumina nano-channel by electroless nickel plating with polyethylene glycol and a palladium catalyst. The spherical metals were formed inside the alumina nano pores. The breakdown voltage and leakage current increased by the chemical reaction of the alumina layer and PdCl2 solution. The thickness of the electroless plated nickel layer was 300 nm. We observed the nano pores in the interface between the alumina layer and the metal electrode. The alumina capacitors with nickel electrodes had a capacitance density of 100 nF/cm2, dielectric loss of 0.01, breakdown voltage of 0.7MV/cm and leakage current of 104μA.

As a pore precursor, carbon black with different content of 0 to 60 vol% were added to (Ba,Sr) powder. Porous (Ba,Sr) ceramics were prepared by pressureless sintering at for 1h under air. Effects of carbon black content on the microstructure and PTCR characteristics of porous (Ba,Sr) ceramics were investigated. The porosity of porous (Ba,Sr) ceramics increased from 6.97% to 18.22% and the grain size slightly decreased from to with increasing carbon black contents. PTCR jump of the (Ba,Sr) ceramics prepared by adding carbon black was more than , and slightly increased with increasing carbon black. The PTCR jump in the (Ba,Sr) ceramics prepared by adding 40 vol% carbon black showed an excellent value of , which was above two times higher than that in (Ba,Sr) ceramics. These results correspond with Heywang model for the explanation of PTCR effect in (Ba,Sr) ceramics. It was considered that carbon black is an effective additive for preparing porous based ceramics. It is believed that newly prepared (Ba,Sr) cermics can be used for PTC thermistor.

The microstructure and positive temperature coefficient of resistivity (PTCR) characteristics of 0.1mol%Na2Ti6O13doped 0.94BaTiO3-0.06(Bi0.5Na0.5)TiO3 (BBNT-NT001) ceramics sintered at various temperatures from 1200oC to 1350oC wereinvestigated in order to develop eco-friendly PTCR thermistors with a high Curie temperature (TC). Resulting thermistors showeda perovskite structure with a tetragonal symmetry. When sintered at 1200oC, the specimen had a uniform microstructure withsmall grains. However, abnormally grown grains started to appear at 1250oC and a homogeneous microstructure with large grainswas exhibited when the sintering temperature reached 1325oC. When the temperature exceeded 1325oC, the grain growth wasinhibited due to the numerous nucleation sites generated at the extremely high temperature. It is considered that Na2Ti6O13 isresponsible for the grain growth of the 0.94BaTiO3-0.06(Bi0.5Na0.5)TiO3 ceramics by forming a liquid phase during the sinteringat around 1300oC. The grain growth of the BBNT-NT001 ceramics was significantly correlated with a decrease of resistivity.All the specimens were observed to have PTCR characteristics except for the sample sintered at 1200oC. The BBNT-NT001ceramics had significantly decreased ñrt and increased resistivity jump with increasing sintering temperature at from 1200oC to1325oC. Especially, the BBNT-NT001 ceramics sintered at 1325oC exhibited superior PTCR characteristics of low resistivityat room temperature (122Ω·cm), high resistivity jump (1.28×104), high resistivity temperature factor (20.4%/oC), and a highTc of 157.9oC.

The influence of various surface morphologies on the mechanical strength of silicon substrates was investigated in this study. The yield for the solar cell industry is mainly related to the fracturing of silicon wafers during the manufacturing process. The flexural strengths of silicon substrates were influenced by the density of the pyramids as well as by the size and the rounded surface of the pyramids. To characterize and optimize the relevant texturing process in terms of mechanical stability and the fabrication yield, the mechanical properties of textured silicon substrates were investigated to optimize the size and morphology of random pyramids. Several types of silicon substrates were studied, including the planar type, a textured surface with large and small pyramids, and a textured surface with rounded pyramids. The surface morphology and a cross-section of the as-textured and fractured silicon substrates were investigated by scanning electron microscopy.

Sintered Nd-Fe-B magnets have been widely used due to their excellent magnetic properties, especially for driving motors of hybrid and electric vehicles. The microstructure of Nd-Fe-B magnets strongly affects their magnetic properties, in particular the coercivity. Therefore, a post-sintering process like heat-treatment is required for improving the magnetic properties of Nd-Fe-B sintered magnets. In this study, cyclic heat treatment was performed at temperatures between and up to 16 cycles in order to control microstructures such as size and shape of the Nd-rich phase without grain growth of the phase. The 2 cycles specimen at this temperature range showed more homogeneous microstructure which leads to higher coercivity of 35 kOe than as-sintered one.