We analysed interfacial traps in organic thin-film transistors (TFTs) in which pentacene and 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) organic semiconductors were deposited by means of vacuum-thermal evaporation and drop-coating methods, respectively. The thermally-deposited pentacene film consists of dentritic grains with the average grain size of around 1 ?m, while plate-like crystals over a few hundred microns are observed in the solution-processed TIPS-pentacene film. From the transfer characteristics of both TFTs, lower subthreshold slope of 1.02 V/decade was obtained in the TIPS-pentacene TFT, compared to that (2.63 V/decade) of the pentacene transistor. The interfacial trap density values calculated from the subthreshold slope are about 3.4×1012/cm2 and 9.4×1012/cm2 for the TIPS-pentacene and pentacene TFTs, respectively. Herein, lower subthreshold slope and less interfacial traps in TIPS-pentacene TFTs are attributed to less domain boundaries in the solution-processed TIPS-pentacene film.

Excellent electron transport properties with enhanced light scattering ability for light harvesting have made well-ordered one dimensional TiO2 nanotube(TNT) arrays an alternative candidate over TiO2 nanoparticles in the area of solar energy conversion applications. The principal drawback of TNT arrays being activated only by UV light has been addressed by coupling the TNT with secondary materials which are visible light-triggered. As well as extending the absorption region of sunlight, the introduction of these foreign components is also found to influence the charge separation and electron lifetime of TNT. In this study, a novel method to fabricate the TNT-based composite photoelectrodes employing visible responsive CuInS2 (CIS) nanoparticles is presented. The developed method is a square wave pulse-assisted electrochemical deposition approach to wrap the inner and outer walls of a TNT array with CIS nanoparticles. Instead of coating as a dense compact layer of CIS by a conventional non-pulsed-electrochemical deposition method, the nanoparticles pack relatively loosely to form a rough surface which increases the surface area of the composite and results in a higher degree of light scattering within the tubular channels and hence a greater chance of absorption. The excellence coverage of CIS on the tubular TiO2 allows the construction of an effective heterojunction that exhibits enhanced photoelectrochemical performance.

Graphene has been synthesized on 100- and 300-nm-thick Ni/SiO2/Si substrates with CH4 gas (1 SCCM) diluted in mixed gases of 10% H2 and 90% Ar (99 SCCM) at 900˚C by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on SiO2/Si substrate after heat treatment at 900˚C for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/SiO2/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/SiO2/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/SiO2/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and 47cm-1, respectively. The several-layer graphene showed a low sheet resistance value of 718Ω/sq and a high light transmittance of 87% at 550 nm.

The Cu2ZnSnS4 (CZTS) thin film solar cell is a candidate next generation thin film solar cell. For the application of an absorption layer in solar cells, CZTS thin films were deposited by pulsed laser deposition (PLD) at substrate temperature of 300˚C without post annealing process. Deposition time was carefully adjusted as the main experimental variable. Regardless of deposition time, single phase CZTS thin films are obtained with no existence of secondary phases. Irregularly-shaped grains are densely formed on the surface of CZTS thin films. With increasing deposition time, the grain size increases and the thickness of the CZTS thin films increases from 0.16 to 1μm. The variation of the surface morphology and thickness of the CZTS thin films depends on the deposition time. The stoichiometry of all CZTS thin films shows a Cu-rich and S-poor state. Sn content gradually increases as deposition time increases. Secondary ion mass spectrometry was carried out to evaluate the elemental depth distribution in CZTS thin films. The optimal deposition time to grow CZTS thin films is 150 min. In this study, we show the effect of deposition time on the structural properties of CZTS thin film deposited on soda lime glass (SLG) substrate using PLD. We present a comprehensive evaluation of CZTS thin films.

ZnO nanorods were successfully fabricated on Zn foil by chemical bath deposition (CBD) method. The ZnO precursor concentration and immersion time affected the surface morphologies, structure, and electrical properties of the ZnO nanorods. As the precursor concentration increased, the diameter of the ZnO nanorods increased from ca. 50 nm to ca. 150 nm. The thicknesses of the ZnO nanorods were from ca. 1.98μm to ca. 2.08μm. ZnO crystalline phases of (100), (002), and (101) planes of hexagonal wurtzite structure were confirmed by XRD measurement. The fabricated ZnO nanorods showed a photoluminescene property at 380 nm. Especially, the ZnO nanorods deposited for 6 h in solution with a concentration of 0.005M showed a stronger (101) peak than they did (100) or (002) peaks. In addition, these ZnO nanorods showed a good electrical property, with the lowest resistance among the four samples, because the nanorods were densely in contact and relatively without pores. Therefore, a ZnO nanorod substrate is useful as a highly sensitive biochip substrate to detect biomolecules using an electrochemical method.

Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition. Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope, transmission electron microscope, atomic force microscope, four-point-probe measurement, and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity. From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films.

본 연구에서는 CVD법으로 세라믹 막을 제조하였다. 튜브의 α-Al2O3 지지체 위에 Ga 염이 첨가된 γ-Al2O3를 코팅하였고, 실란화합물인 tetramethylorthosilane (TMOS) 를 650℃에서 화학적 기상 증착법으로 막에 증착하였다. 제조된 세라믹 막을 사용하여 수소, 질소, 이산화탄소, 메탄의 단일조성 기체투과 실험을 600℃에서 시행하였다. Ga 염 비첨가 시, 600℃ 수분 처리 실험의 H2/N2 선택도가 926에서 829로 감소한 반면, Ga 염 첨가 시에는 910에서 904로 안정하였다. 이 결과를 통해, 막에 금속염을 첨가하여 제조한 막이 수분 안정성을 향상시킴을 확인하였다.

본 연구에서는 낙동강 진우도 해빈에 모래 포집시험구(실험 Site)를 설치하고 자연해빈에서의 비사 계측, 광파측거의를 통해 대표 해빈단면의 변화를 관찰하여 서로 비교분석하였다. 또한 해빈에서 바람에 의해 공급되는 모래(비사)의 해안 법선방향 및 평행한 방향의 모래 공급량을 정량적으로 평가하고자 하였다. 또한 실내에서의 풍동실험장치를 이용하여 해빈상에 초기 성장조건에 해당하는 식생의 이식하여 바람에 의해 이송되는 비사의 포집특성을 관찰하였다.

Synthesis of RGO (reduced graphene oxide)-CdS composite material was performed through CBD (chemical bath deposition) method in which graphene oxide served as the support and Cadmium Sulfate Hydrate as the starting material. Graphene-based semiconductor photocatalysts have attracted extensive attention due to their usefulness for environmental and energy applications. The band gap (2.4 eV) of CdS corresponds well with the spectrum of sunlight because the crystalline phase, size, morphology, specic surface area and defects, etc., of CdS can affect its photocatalytic activity. The specific surface structure (morphology) of the photocatalyst can be effective for the suppression of recombination between photogenerated electrons and holes. Graphene (GN) has unique properties such as a high value of Young's modulus, large theoretical specific surface area, excellent thermal conductivity, high mobility of charge carriers, and good optical transmittance. These excellent properties make GN an ideal building block in nanocomposites. It can act as an excellent electron-acceptor/transport material. Therefore, the morphology, structural characterization and crystal structure were observed using various analytical tools, such as X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. From this analysis, it is shown that CdS particles were well dispersed uniformly in the RGO sheet. Furthermore, the photocatalytic property of the resulting RGO-CdS composite is also discussed in relation to environmental applications such as the photocatalytic degradation of pollutants. It was found that the prepared RGO-CdS nanocomposites exhibited enhanced photocatalytic activity as compared with that of CdS nanoparticles. Therefore, better efficiency of photodegradation was found for water purification applications using RGO-CdS composite.

Diamond-like carbon (DLC) films have been widely used in many industrial applications because of their outstanding mechanical and chemical properties like hardness, wear resistance, lubricous property, chemical stability, and uniformity of deposition. Also, DLC films coated on paper, polymer, and metal substrates have been extensively used. In this work, in order to improve the printing quality and plate wear of polymer printing plates, different deposition conditions were used for depositing DLC on the polymer printing plates using the Pulsed DC PECVD method. The deposition temperature of the DLC films was under 100˚C, in order to prevent the deformation of the polymer plates. The properties of each DLC coating on the polymer concave printing plate were analyzed by measuring properties such as the roughness, surface morphology, chemical bonding, hardness, plate wear resistance, contact angle, and printing quality of DLC films. From the results of the analysis of the properties of each of the different DLC deposition conditions, the deposition conditions of DLC + F and DLC + Si + F were found to have been successful at improving the printing quality and plate wear of polymer printing plates because the properties were improved compared to those of polymer concave printing plates.

Single crystalline Cu nanowires with controlled diameters and aspect ratios have been synthesized using electrochemical deposition within confined nanochannels of a porous anodic aluminium oxide(AAO) template. The diameters of nano-sized cylindrical pores in AAO template were adjusted by controlling the anodization conditions. Cu nanowires with diameters of approximately 38, 99, 274 nm were synthesized by the electrodeposition using the AAO templates. The crystal structure, morphology and microstructure of the Cu nanowires were systematically investigated using XRD, FE-SEM, TEM and SAED. Investigation results revealed that the Cu nanowires had the controlled diameter, high aspect ratio and single crystalline nature.

Cold spray deposition using Titanium powder was carried out to investigate the effects of powder morphology and powder preheating on the coating properties such as porosity and hardness. The in-flight particle velocity of Ti powder in cold spray process was directly measured using the PIV (particle image velocimetry) equipment. Two types of powders (spherical and irregular ones) were used to manufacture cold sprayed coating layer. The results showed that the irregular morphology particle appeared higher in-flight particle velocity than that of the spherical one under the same process condition. The coating layer using irregular morphology powder represented lower porosity level and higher hardness. Two different preheating conditions (no preheating and preheating at ) were used in the process of cold spraying. The porosity decreased and the hardness increased by conducting preheating at . It was found that the coating properties using different preheating conditions were dependent not on the particle velocity but on the deformation temperature of particle. The deposition mechanism of particles in cold spray process was also discussed based on the experimental results of in flight-particle velocity.

CoSi2 was formed through annealing of atomic layer deposition Co thin films. Co ALD was carried out using bis(N,N'-diisopropylacetamidinato) cobalt (Co(iPr-AMD)2) as a precursor and NH3 as a reactant; this reaction produced a highly conformal Co film with low resistivity (50 μΩcm). To prevent oxygen contamination, ex-situ sputtered Ti and in-situ ALD Ru were used as capping layers, and the silicide formation prepared by rapid thermal annealing (RTA) was used for comparison. Ru ALD was carried out with (Dimethylcyclopendienyl)(Ethylcyclopentadienyl) Ruthenium ((DMPD)(EtCp)Ru) and O2 as a precursor and reactant, respectively; the resulting material has good conformality of as much as 90% in structure of high aspect ratio. X-ray diffraction showed that CoSi2 was in a poly-crystalline state and formed at over 800˚C of annealing temperature for both cases. To investigate the as-deposited and annealed sample with each capping layer, high resolution scanning transmission electron microscopy (STEM) was employed with electron energy loss spectroscopy (EELS). After annealing, in the case of the Ti capping layer, CoSi2 about 40 nm thick was formed while the SiOx interlayer, which is the native oxide, became thinner due to oxygen scavenging property of Ti. Although Si diffusion toward the outside occurred in the Ru capping layer case, and the Ru layer was not as good as the sputtered Ti layer, in terms of the lack of scavenging oxygen, the Ru layer prepared by the ALD process, with high conformality, acted as a capping layer, resulting in the prevention of oxidation and the formation of CoSi2.

We present a method of graphene synthesis with high thickness uniformity using the thermal chemical vapor deposition (TCVD) technique; we demonstrate its application to a grid supporting membrane using transmission electron microscope (TEM) observation, particularly for nanomaterials that have smaller dimensions than the pitch of commercial grid mesh. Graphene was synthesized on electron-beam-evaporated Ni catalytic thin films. Methane and hydrogen gases were used as carbon feedstock and dilution gas, respectively. The effects of synthesis temperature and flow rate of feedstock on graphene structures have been investigated. The most effective condition for large area growth synthesis and high thickness uniformity was found to be 1000˚C and 5 sccm of methane. Among the various applications of the synthesized graphenes, their use as a supporting membrane of a TEM grid has been demonstrated; such a grid is useful for high resolution TEM imaging of nanoscale materials because it preserves the same focal plane over the whole grid mesh. After the graphene synthesis, we were able successfully to transfer the graphenes from the Ni substrates to the TEM grid without a polymeric mediator, so that we were able to preserve the clean surface of the as-synthesized graphene. Then, a drop of carbon nanotube (CNT) suspension was deposited onto the graphene-covered TEM grid. Finally, we performed high resolution TEM observation and obtained clear image of the carbon nanotubes, which were deposited on the graphene supporting membrane.

The defect sites on chemical vapor deposition grown graphene are investigated through the selective electrochemical deposition (SED) of Au nanoparticles. For SED of Au nanoparticles, an engineered potential pulse is applied to the working electrode versus the reference electrode, thereby highlighting the defect sites, which are more reactive relative to the pristine surface. Most defect sites decorated by Au nanoparticles are situated along the Cu grain boundaries, implying that the origin of the defects lies in the synthesis of uneven graphene layers on the rough Cu surface.

We analyzed the effect of etchants for metal catalysts in terms of the characteristics of resulting graphene films, such as sheet resistance, hall mobility, transmittance, and carrier concentration. We found the residue of FeCl3 etchant degraded the sheet resistance and mobility of graphene films. The residue was identified as an iron oxide containing a small amount of Cl through elemental analysis using X-ray photoelectron spectroscopy. To remove this residue, we provide an alternative etching solution by introducing acidic etching solutions and their combinations (HNO3, HCl, FeCl3 + HCl, and FeCl3+HNO3). The combination of FeCl3 and acidic solutions (HCl and HNO3) resulted in more enhanced electrical properties than pure etchants, which is attributed to the elimination of left over etching residue, and a small amount of amorphous carbon debris after the etching process.

Electricity is generated by the combined reactions of hydrogen oxidation and oxygen reduction which occur on the Pt/C catalyst surface. There have been lots of researches to make high performance catalysts which can reduce Pt utilization. However, most of catalysts are synthesized by wet-processes and a significant amount of chemicals are emitted during Pt/C synthesis. In this study, Pt/C catalyst was produced by arc plasma deposition process in which Pt nano-particles are directly deposited on carbon black surfaces. During the process, islands of Pt nano-particles were produced and they were very fine and well-distributed on carbon black surface. Compared with a commercialized Pt/C catalyst (Johnson & Matthey), finer particle size, narrower size distribution, and uniform distribution of APD Pt/C resulted in higher electrochemical active surface area even at the less Pt content.

The a-Si:H/c-Si hetero-junction (HJ) solar cells have a variety of advantages in efficiency and fabrication processes. It has already demonstrated about 23% in R&D scale and more than 20% in commercial production. In order to further reduce the fabrication cost of HJ solar cells, fabrication processes should be simplified more than conventional methods which accompany separate processes of front and rear sides of the cells. In this study, we propose a simultaneous deposition of intrinsic thin a-Si:H layers on both sides of a wafer by dual hot wire CVD (HWVCD). In this system, wafers are located between tantalum wires, and a-Si:H layers are simultaneously deposited on both sides of the wafer. By using this scheme, we can reduce the process steps and time and improve the efficiency of HJ solar cells by removing surface contamination of the wafers. We achieved about 16% efficiency in HJ solar cells incorporating intrinsic a-Si:H buffers by dual HWCVD and p/n layers by PECVD.

Negative temperature coefficient (NTC) materials have been widely studied for industrial applications, such assensors and temperature compensation devices. NTC thermistor thick films of Ni1+xMn2-xO4+δ (x=0.05, 0, −0.05) werefabricated on a glass substrate using the aerosol deposition method at room temperature. Resistance verse temperature (R-T)characteristics of the as-deposited films showed that the B constant ranged from 3900 to 4200 K between 25oC and 85oCwithout heat treatment. When the film was annealed at 600oC 1h, the resistivity of the film gradually decreased due tocrystallization and grain growth. The resistivity and the activation energy of films annealed at 600oC for 1 h were 5.203, 5.95,and 4.772KΩ·cm and 351, 326, and 299meV for Ni0.95Mn2.05O4+δ, NiMn2O4, and Ni1.05Mn1.95O4+δ, respectively. The annealingprocess induced insulating Mn2O3 in the Ni deficient Ni0.95Mn2.05O4+δ composition resulting in large resistivity and activationenergy. Meanwhile, excess Ni in Ni1.05Mn1.95O4+δ suppressed the abnormal grain growth and changed Mn3+ to Mn4+, givinglower resistivity and activation energy.

We have investigated the structural and optical properties of Ga-doped ZnO (GZO) thin films deposited by RFmagnetron sputtering at various deposition temperatures from 100 to 500oC. All the GZO thin films are grown as a hexagonalwurtzite phase with highly c-axis preferred parameter. The structural and electrical properties are strongly related to depositiontemperature. The grain size increases with the increasing deposition temperature up to 400oC and then decreases at 500oC. Thedependence of grain size on the deposition temperature results from the variation of thermal activation energy. The resistivityof GZO thin film decreases with the increasing deposition temperature up to 300oC and then decreases up to 500oC. GZO thinfilm shows the lowest resistivity of 4.3×10−4Ωcm and highest electron concentration of 1.0×1021cm−3 at 300oC. The mobilityof GZO thin films increases with the increasing deposition temperature up to 400oC and then decreases at 500oC. GZO thinfilm shows the highest resistivity of 14.1cm2/Vs. The transmittance of GZO thin films in the visible range is above 87% atall the deposition temperatures. GZO is a feasible transparent electrode for the application to the transparent electrode of thinfilm solar cells.