The properties of zinc oxynitride semiconductors and their associated thin film transistors are studied. Reactively sputtered zinc oxynitride films exhibit n-type conduction, and nitrogen-rich compositions result in relatively high electron mobility. Nitrogen vacancies are anticipated to act as shallow electron donors, as their calculated formation energy is lowest among the possible types of point defects. The carrier density can be reduced by substituting zinc with metals such as gallium or aluminum, which form stronger bonds with nitrogen than zinc does. The electrical properties of gallium-doped zinc oxynitride thin films and their respective devices demonstrate the carrier suppression effect accordingly.

In this study, we investigated the effect of annealing conditions on the ferromagnetic resonance(FMR) of yttrium iron garnet (Y3Fe5O12, YIG) thin film prepared on gadolinium gallium garnet (Gd3Ga5O12, GGG) substrate. The YIG thin films were grown by rf magnetron sputtering at room temperature and were annealed at various temperatures from 700 to 1000 ˚C. FMR characteristics of the YIG thin films were investigated with a coplanar waveguide FMR measurement system in a frequency range from 5 to 20 GHz. X-ray diffraction(XRD) and X-ray photoelectron spectroscopy(XPS) were used to characterize the phase formation, crystal structure and composition of the YIG thin films. Field dependent magnetization curves at room temperature were obtained by using a vibrating sample magnetometer(VSM). The FMR measurements revealed that the resonance magnetic field was highly dependent on the annealing condition: the lowest FMR linewidth can be observed for the 800 ˚C annealed sample, which agrees with the VSM results. We also found that the Fe and O composition changes during the annealing process play important roles in the observed magnetic properties.

스테아르산과 인지질혼합물의 농도변화에 띠르는 유기초박막에 대한 안정성을 조사하였다. 스 테아르산과 인지질 혼합물 유기초박막은 ITO glass에 LB법을 사용하여 제막하였다. 전기화학적 특성은 NaClO4 용액에서 3 전극 시스템으로 순환전압전류법을 사용하여 초기 1650 mV에서 최종 퍼텐셜 -1350 mV 까지 측정하였다. 그 결과 스테아르산과 인지질의 혼합물 유기초막은 순환전압전류도표로부 터 산화전류로 인한 비가역공정으로 나타났다. 스테아르산과 인지질혼합물 LB막(몰비 1:1, 1:2, 1:3)에 서 확산계수(D)는 0.01 N NaClO4에서 각각 1.4x10-3, 1.7x10-3 및 1.6x10-3 (cm2/s)로 산출되었다.

To research the characteristics of ITO film depending on a polarity of SiOC, specimens of ITO/SiOC/glass with metal-insulator-substrates (MIS) were prepared using a sputtering system. SiOC film with 17 sccm of oxygen flow rate became a non-polarity with low surface energy. The PL spectra of the ITO films deposited with various argon flow rates on SiOC film as non-polarity were found to lead to similar formations. However, the PL spectra of ITO deposited with various argon flow rates on SiOC with polarity were seen to have various features owing to the chemical reaction between ITO and the polar sites of SiOC. Most ITO/SiOC films non-linearly showed the Schottky contacts and current increased. But the ITO/SiOC film with a low current demonstrated an Ohmic contact.

제련공정 산업에서 발생하는 희소/유가 금속을 함유한 산 폐수는 금속의 산세정 과정에서 다량 방출된다. 주로 중화나 치환법, 이온교환법 등을 사용하였지만 큰 비용과 친환경적이지 못한 단점이 있다. 이에 본 연구에서는 제련 공정에서 발생하는 희소금속을 함유한 폐산용액을 막분리법을 적용하여 분리하기 위해 내산성이 향상된 thin-film composite NF membranes (TFC-NF)을 제조하고자 하였다. TFC-NF는 다공성 지지막 위에 polyamide 계면중합법을 이용하여 제조하였다. 제조 한 TFC-NF는 15 wt% 황산에 노출한 후, 75psi 압력의 cross-flow 방식으로 내산성 투과실험을 진행하였고 ATR-FTIR, XPS, FE-SEM 등을 통해 막의 특징을 분석하였다.

Fluorine-doped SnO2 (FTO) thin film/Ag nanowire (NW) double layers were fabricated by means of spin coating and ultrasonic spray pyrolysis. To investigate the optimum thickness of the FTO thin films when used as protection layer for Ag NWs, the deposition time of the ultrasonic spray pyrolysis process was varied at 0, 1, 3, 5, or 10 min. The structural, chemical, morphological, electrical, and optical properties of the double layers were examined using X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, the Hall effect measurement system, and UV-Vis spectrophotometry. Although pure Ag NWs formed isolated droplet-shaped Ag particles at an annealing temperature of 300 oC, Ag NWs covered by FTO thin films maintained their high-aspect-ratio morphology. As the deposition time of the FTO thin films increased, the electrical and optical properties of the double layers degraded gradually. Therefore, the double layer fabricated with FTO thin films deposited for 1 min exhibited superb sheet resistance (~14.9Ω/□), high optical transmittance (~88.6 %), the best FOM (~19.9 × 10−3 Ω−1), and excellent thermal stability at an annealing temperature of 300 oC owing to the good morphology maintenance of the Ag NWs covered by FTO thin films.

Glancing angle deposition (GLAD) is a powerful technique to control the morphology and microstructure of thin film prepared by physical vapor deposition. Chromium (Cr) thin films were deposited on a polymer substrate by a sputtering technique using GLAD. The change in thickness and Vickers microhardness for the samples was observed with a change in the glancing angle. The adhesion properties of the critical load (Lc) by a scratch tester for the samples were also measured with varying the glancing angle. The critical load, thickness and Vickers microhardness for the samples decreased with an increase in the glancing angle. However, the thickness of the Cr thin film prepared at a 90o glancing angle showed a relatively large value of 50 % compared to that of the sample prepared at 0o. The results of X-ray diffraction and scanning electron microscopy demonstrated that the effect of GLAD on the microstructure of samples prepared by sputter technique was not as remarkable as the samples prepared by evaporation technique. The relatively small change in thickness and microstructure of the Cr thin film is due to the superior step-coverage properties of the sputter technique.

(PDDA/SiO2) thin films that consisted of positively charged poly (diallyldimethylammonium chloride) (PDDA) and negatively charged SiO2 nanoparticles were fabricated on a glass substrate by an applying voltage layer-by-layer (LBL) self-assembly method. In this study, the microstructure and optical properties of the (PDDA/SiO2) thin films coated on glass substrate were measured as a function of the applied voltage on the Pt electrodes. When 1.0 V was applied to a Pt electrode in a PDDA and SiO2 solution, the thickness of the (PDDA/SiO2)10 thin film increased from 79 nm to 166 nm. The surface roughness also increased from 15.21 nm to 33.25 nm because the adsorption volume of the oppositely charged PDDA and SiO2 solution increased. Especially, when the voltage was applied to the Pt electrode in the SiO2 solution, the thickness increase of the (PDDA/SiO2) thin film was larger than that obtained when using the PDDA solution. The refractive index of the fabricated (PDDA/SiO2) thin film was ca. n = 1.31~1.32. The transmittance of the glass substrate coated by (PDDA/SiO2)6 thin film with a thickness of 106 nm increased from ca. 91.37 to 95.74% in the visible range.

Herein, we describe the effect of the cooling-off condition of a solution-processed 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) film on its molecular distribution and the resultant electrical properties. Since the solvent in a TIPS-pentacene droplet gradually evaporates from the rim to the center exhibiting a radial form of solute, for a quenched case, domains of the TIPS-pentacene film are aboriginally spread showing original features of radial shape due to suppressed molecular rearrangement during the momentary cooling period. For the slowly cooled case, however, TIPS-pentacene molecules are randomly rearranged during the long cooling period. As a result, in the lopsided electrodes structure proposed in this work, the charge transport generates more effectively under the case for radial distribution induced by the quenching technique. It was found that the molecular redistribution during the cooling-period plays an important role on the magnitude of the mobility in a solution-processed organic transistor. This work provides at least a scientific basis between the molecular distribution and electrical properties in solution-processed organic devices.

Amorphous (a-Si) films were epitaxially crystallized on a very thin large-grained poly-Si seed layer by a silicide-enhanced rapid thermal annealing (SERTA) process. The poly-Si seed layer contained a small amount of nickel silicide whichcan enhance crystallization of the upper layer of the a-Si film at lower temperature. A 5-nm thick poly-Si seed layer was thenprepared by the crystallization of an a-Si film using the vapor-induced crystallization process in a NiCl2 environment. Afterremoving surface oxide on the seed layer, a 45-nm thick a-Si film was deposited on the poly-Si seed layer by hot-wire chemicalvapor deposition at 200oC. The epitaxial crystallization of the top a-Si layer was performed by the rapid thermal annealing(RTA) process at 730oC for 5 min in Ar as an ambient atmosphere. Considering the needle-like grains as well as thecrystallization temperature of the top layer as produced by the SERTA process, it was thought that the top a-Si layer wasepitaxially crystallized with the help of NiSi2 precipitates that originated from the poly-Si seed layer. The crystallinity of theSERTA processed poly-Si thin films was better than the other crystallization process, due to the high-temperature RTA process.The Ni concentration in the poly-Si film fabricated by the SERTA process was reduced to 1×1018cm−3. The maximum field-effect mobility and substrate swing of the p-channel poly-Si thin-film transistors (TFTs) using the poly-Si film prepared by theSERTA process were 85cm2/V·s and 1.23V/decade at Vds=−3V, respectively. The off current was little increased underreverse bias from 1.0×10−11 A. Our results showed that the SERTA process is a promising technology for high quality poly-Si film, which enables the fabrication of high mobility TFTs. In addition, it is expected that poly-Si TFTs with low leakagecurrent can be fabricated with more precise experiments.

내염소성을 갖는 염제거공정용 술폰화 폴리아릴렌 에테르 술폰 랜덤 공중합체(SPAES) thin film composite (TFC)막이 모노글라임 용매를 이용하여 제조되었다. 모노글라임은 선택층인 SPAES만을 용해시키며, 다공성 폴리술폰(예 : Udel®)층에 대해 비용해성을 지녀, TFC 제조를 위한 선택적 용매로 사용될 수 있다. 또한 개미산이나 디에틸글리콜과는 달리, 환경적으로 무해하며, 매우 낮은 끊는점을 지녔다는 점이 또 다른 장점이 될 수 있다. 다공성 Udel® 지지체 위에 코팅시, 코팅용액이 기공구조에 침투하여 유수량을 감소시키는 기공투과현상이 발생하는데, 이를 최소화하기 위해 지지체를 이소프로필알콜과 글리세린 혼합액에서 전처리 후에, 코팅-건조 공정을 통해 결함이 없는 SPAES TFC로 제조된다. 또한, SPAES 선택층의술폰화도, 고정이온의 염상태 및 물리-화학적 가교효과를 SPAES TFC막을 통한 투과거동과 관련하여 관찰하였다.

기존의 폴리아마이드 박막 역삼투 복합막(PA TFC RO Membrane)은 우수한 분리투과특성을 지니고 있으나 내염소성이 상대적으로 낮은 단점을 지니고 있다. 본 연구에서는 이를 해결하기 위하여 표면에 -OH나 -COOH 기가 도입된 다공성 지지체를 제조하고, 그 표면에 폴리아마이드 박막을 형성하여 역삼투 복합막을 제조하였다. 제조된 역삼투막의 구조 및 분리투과 특성은 여러 가지 기기분석 방법과 투과테스트 방법으로 분석하였다. 폴리아마이드 박막을 제조하기 위하여 아민계 단량체로는 메타-페닐렌 디아민(MPD)과 2,6-디아민 톨루엔(2,6-DAT)을 사용하였고, 디엑시드계 단량체로는 트리-메소일 클로라이드(TMC)를 사용하였다. 제조된 복합막의 투과도는 800 psi에서 약 1.0 m3/m2day 이상이었으며 이때 염배제율은 99.0% 이상이었다. 내염소성도 친수성기가 없는 폴리설폰 지지체를 사용한 복합막에 비하여 우수한 것으로 나타났다.

The contact mechanism of devices is usually researched at electrode contacts. However, the contact between a dielectric and channel at the MOS structure is more important. The graphene was used as a channel material, and the thin film transistor with MOS structure was prepared to observe the contact mechanism. The graphene was obtained on Cu foil by the thermal decomposition method with H2 and CH4 mixed gases at an ambient annealing temperature of 1000˚C during the deposition for 30 min, and was then transferred onto a SiO2/Si substrate. The graphene was doped in a nitrogen acidic solution. The chemical properties of graphene were investigated to research the effect of nitric atoms doping. The sheet resistance of graphene decreased after nitrogen acidic doping, and the sheet resistance decreased with an increase in the doping times because of the increment of negative charge carriers. The nitric-atom-doped graphene showed the Ohmic contact at the curve of the drain current and drain voltage, in spite of the Schottky contact of grapnene without doping.

To obtain the transistor with ambipolar transfer characteristics, IGZO/SiOC thin film transistor was prepared on SiOC with various polarities as a gate insulator. The interface between a channel and insulator showed the Ohmic and Schottky contacts in the bias field of -5V ~ +5V. These contact characteristics depended on the polarities of SiOC gate insulators. The transfer characteristics of TFTs were observed the Ohmic contact on SiOC with polarity, but Schottky contact on SiOC with low polarity. The IGZO/SiOC thin film transistor with a Schottky contact in a short range bias electric field exhibited ambipolar transfer characteristics, but that with Ohmic contact in a short range electric field showed unipolar characteristics by the trapping phenomenon due to the trapped ionized defect formation.

Ultra-thin liquid films on solid substrates in contact with the saturated vapor are studied by using molecular dynamics simulation. The properties of evaporation and condensation of the films of various adsorptive strengths and thicknesses are obtained during the quasi-steady film evolution. Net condensations occur when the ultra-thin films on the high energy surface come into contact with the saturated vapor phase because the normal film pressure stays lower than the saturated vapor pressure. The net condensation rate is higher for the material combination of higher adsorptive strength. It becomes more so when the film thickness is of a lesser size. On the other hand, that of lower adsorptive strength has lower net condensation rate and depends less on the film thickness. Therefore, the size effect of the condensation phenomenon is more significant for the system of a higher adsorptive strength. This properties come from the state of ultra-thin film, which can be quantified by using disjoining pressure in the quasi-steady processes. These results have implications in practical problems concerning the moving contact line when the precursor film formation is critica

A stoichiometric mixture of evaporating materials for ZnAl2Se4 single-crystal thin films was prepared in a horizontalelectric furnace. These ZnAl2Se4 polycrystals had a defect chalcopyrite structure, and its lattice constants were a0=5.5563Åand c0=10.8897Å.To obtain a single-crystal thin film, mixed ZnAl2Se4 crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were 620oCand 400oC, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ω-2θ scans. The carrier density and mobility of the ZnAl2Se4 single-crystal thin filmwere 8.23×1016cm−3 and 287m2/vs at 293K, respectively. To identify the band gap energy, the optical absorption spectra ofthe ZnAl2Se4 single-crystal thin film was investigated in the temperature region of 10-293K. The temperature dependence ofthe direct optical energy gap is well presented by Varshni's relation: Eg(T)=Eg(0)−(αT2/T+β). The constants of Varshni'sequation had the values of Eg(0)=3.5269eV, α=2.03×10−3eV/K and β=501.9K for the ZnAl2Se4 single-crystal thin film.The crystal field and the spin-orbit splitting energies for the valence band of the ZnAl2Se4 were estimated to be 109.5meVand 124.6meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicatethat splitting of the ∆so definitely exists in the Γ5 states of the valence band of the ZnAl2Se4/GaAs epilayer. The threephotocurrent peaks observed at 10K are ascribed to the A1-, B1-exciton for n=1 and C21-exciton peaks for n=21.

Magnetostrictive actuator is fabricated with epoxy bonding method instead of sputtering method in this study. Fabrication process and experimental measurement method for magneto-mechanical characteristics is proposed. For the design of highly flexible magnetostrictive actuator, TbDyFe epoxy bonding with SU-8 substrate is adopted. The fabrication process for SU-8 substrate and the epoxy bonding is suggested and magnetostrictive behavior is investigated. Variable magnetic field is applied to measure the various magnetostrictive characteristics and magnetostriction is measured with different waves and different magnitude of magnetic field.

We investigated the characteristics of electroless plated Cu films on screen printed Ag/Anodized Al substrate. Cu plating was attempted using neutral electroless plating processes to minimize damage of the anodized Al substrate; this method used sodium hypophosphite instead of formaldehyde as a reducing agent. The basic electroless solution consisted of CuSO4·5H2O as the main metal source, NaH2PO2·H2O as the reducing agent, C6H5Na3O7·2H2O and NH4Cl as the complex agents, and NiSO4·6H2O as the catalyser for the oxidation of the reducing agent, dissolved in deionized water. The pH of the Cu plating solutions was adjusted using NH4OH. According to the variation of pH in the range of 6.5~8, the electroless plated Cu films were coated on screen printed Ag pattern/anodized Al/Al at 70˚C. We investigated the surface morphology change of the Cu films using FE-SEM (Field Emission Scanning Electron Microscopy). The chemical composition of the Cu film was determined using XPS (X-ray Photoelectron Spectroscopy). The crystal structures of the Cu films were investigated using XRD (X-ray Diffraction). Using electroless plating at pH 7, the structures of the plated Cu-rich films were typical fcc-Cu; however, a slight Ni component was co-deposited. Finally, we found that the formation of Cu film plated selectively on PCB without any lithography is possible using a neutral electroless plating process.

This paper presents new type magnetostrictive optical systems. The suggested wireless optical systems are developed by using two types of magnetostrictive thin film actuators. The first is a seesaw type wireless-controlled compact optical switch, and another is a comb type TbDyFeNi thin film actuator by silicon micromachining techniques with DC magnetron sputtering. In the seesaw type, TbDyFe films are selectively deposited on the micromachined switch matrix. For the optical switching operation, switch is arranged in a 1×2 array (mirror size of 5mm × 800μm × 50μm) and has different length from the supporting point. Mirrors are also actuated by externally applied magnetic fields up to 0.5T. In the comb type, the effect of Ni content on the magneto-mechanical properties of the Tb0.24Dy0.76Fe2 system is investigated with the effect of deposited film thickness of TbDyFeNi on silicon substrate for wireless microactuator. As results, magneto-mechanical characteristics are investigated. using magnetization and deflected angle variation

In this study, BaTiO3 thin films were grown by RF-magnetron sputtering, and the effects of the thin film thickness on the structural characteristics of BaTiO3 thin films were systematically investigated. Instead of the oxide substrates generally used for the growth of BaTiO3 thin films, p-Si substrates which are widely used in the current semiconductor processing, were used in this study in order to pursue high efficiency in device integration processing. For the crystallization of the grown thin films, annealing was carried out in air, and the annealing temperature was varied from 700˚C. The changed thickness was within 200 nm~1200 nm. The XRD results showed that the best crystal quality was obtained for ample thicknesses 700 nm~1200 nm. The SEM analysis revealed that Si/BaTiO3 are good quality interface characteristics within 300 nm when observed thickness. And surface roughness observed of BaTiO3 thin films from AFM measurement are good quality surface characteristics within 300 nm. Depth-profiling analysis through GDS (glow discharge spectrometer) showed that the stoichiometric composition could be maintained. The results obtained in this study clearly revealed BaTiO3 thin films grown on a p-Si substrate such as thin film thickness. The optimum thickness was 300 nm, the thin film was found to have the characteristics of thin film with good electrical properties.