본 연구에서는 유연성을 갖는 전극 제조를 위해 환원된 그래핀 옥사이드/단일벽 탄소나노튜 브 복합체를 금이 코팅된 PET 기판 위에 스프레이 코팅하였다. 제조된 플렉시블한 전극의 전기 용량 값 은 1 M의 황산 전해질과 100 mV s-1 의 주사속도에서 82 F g-1 으로 측정 되었으며, 이 용량 값은 500 번의 굽힘 시험 후에 38 F g-1 로 감소되는 현상을 확인 하였다. 또한, 이러한 결과는 정전류 충 방전과 전기화학 임피던스법을 포함한 전기화학적 분석 결과와도 부합하는 결과를 나타내었다. 유연성을 갖는 환원된 그래핀 옥사이드/단일벽 탄소나노튜브 복합체 전극은 500회의 반복적인 굽힘 시험 후에도 대략 50%의 초기 전기 용량 값을 유지 할 수 있었으며, 이러한 여러 가지 전기화학적 특성을 고려하여 볼 때 미래 개발 가능한 플렉시블한 에너지 저장 매체로써의 적용이 가능 하다는 점을 확인 할 수 있었 다.

Graphene oxide (GO) powder processed by Hummer's method is mixed with p-type Bi2Te3 based thermoelectric materials by a high-energy ball milling process. The synthesized GO-dispersed p-type Bi2Te3 composite powder has a composition of Bi0.5Sb1.5Te3 (BSbT), and the powder is consolidated into composites with different contents of GO powder by using the spark plasma sintering (SPS) process. It is found that the addition of GO powder significantly decreases the thermal conductivity of the pure BSbT material through active phonon scattering at the newly formed interfaces. In addition, the electrical properties of the GO/BSbT composites are degraded by the addition of GO powder except in the case of the 0.1 wt% GO/BSbT composite. It is found that defects on the surface of GO powder hinder the electrical transport properties. As a result, the maximum thermoelectric performance (ZT value of 0.91) is achieved from the 0.1% GO/BSbT composite at 398 K. These results indicate that introducing GO powder into thermoelectric materials is a promising method to achieve enhanced thermoelectric performance due to the reduction in thermal conductivity.

최근 2차원 나노 물질을 응용하여 수처리 막의 성능을 향상시킬 수 있는가에 대한 연구가 활발하다. 그 노력의 한 가운데에 원자 두께를 가지고 있으면서 손쉽게 구할 수 있고 층으로 쌓을 수도 있는 2차원 물질인 그래핀이 자리하고 있다. 이 총설에서 우리는 그래핀으로부터 만들 수 있는 두 가지 막 구조에 관한 기초 물질 전달 현상을 최근 연구 성과를 중심으 로 다룬다. 그 물질 자체로 이미 물질 전달 차단성을 갖는 그래핀에 정확히 제어된 크기의 구멍을 뚫을 수 있다면 아마도 원 자 크기 수준으로 얇은 두께 때문에 그래핀 막은 같은 기공 크기의 어느 막보다도 빠른 궁극적 투과도를 나타낼 것이며, 이 로부터 선택도를 담보할 수 있다면 다양한 막 분리 공정에 적용할 수 있을 것이다. 그 한 예로, 나노미터 이하의 기공을 가정 한 초박막 침투성 그래핀 막에 대한 분자동역학 연구와 몇몇 초기 실험 결과들이 해수담수화 막으로서의 가능성을 보인 점은 주목할 만하다. 그래핀 물질로부터 다른 구성을 가진 막을 설계할 수 있는데, 이 막은 적당히 산화된 그래핀 마이크로 판들을 무작위로 적층함으로써 구현할 수 있다. 그래핀 판 적층 간격을 나노미터 이하로 쉽게 제어할 수 있기 때문에 이 구조 역시 수처리 및 해수담수화 막으로서의 가능성을 시사한다. 기존 막기술에 존재하지 않던 구조와 물질 전달 성질을 가짐으로써 두 종류의 그래핀 막은 앞으로 수처리 기술을 비롯한 다양한 막 기술의 응용분야에서 효과적으로 기여할 가능성이 충분하다.

Usually olefin/paraffin separations (e.g., ethane/ethylene and propane/ propylene) by distillation process are energy-intensive because such molecules have very similar molecular size and boiling point. Membrane process has been considered as an alternative method to achieve energy- efficient olefin/paraffin separation. However, based on solution-diffusion mechanism, it is hard to design good membrane materials to separate them efficiently. Here we report fundamental separation properties of olefin/paraffin through graphene oxide (GO) membranes having slit-like channels. Analogue to carbon molecular sieve membranes, GO membranes showed ability to separate these molecules. To improve the separation properties, GO membranes have been modified by various methods.

Graphene oxide (GO), a highly oxidized graphene sheet, is a distinguished 2-D nanosheet. GO membranes exhibit good CO2 separation properties due to its various polar functional groups with oxygen resulting in high CO2 sorption properties. Recently, GO nanosheets have been incorporated into polymer membranes expecting the synergistic effect. There is, however, little research on GO as a crosslinker even though it has high potential due to available functional groups for further reaction. Here, we prepared GO/polymer membranes by crosslinking reactions between polar groups of GO and bi-functional polymer matrix at different temperatures. Optimum crosslinking condition was found by analyzing gas transport, chemical properties of samples. Degree of crosslinking in GO/polymer nanocomposites affected gas transport behavior.

Graphene oxide (GO) has been extensively studied for membrane material for gas and liquid separation due to its outstanding features such as selective CO2 or water vapor transport properties. Although GO membranes can be easily fabricated in the form of thin-film composite membranes by using high-flux polymeric support membranes, it shows relatively low gas permeability due to high tortuosity. Here we report the way to improve gas permeation rate through porous graphene oxide by reducing the gas permeation pathway, with maintaining GO’s two-dimensional structure. We also used polymer, which has high CO2/N2 selectivity, and prepared GO/polymer composite membranes as a function of GO concentration. This study will provide a further insight on how such two-dimensional nanosheets can be harmonized with polymer and improved membrane properties.

고분자막이 가진 수투과능 한계와 비가역적 막오염에 의한 효율 저하는 막기반 수처리공정의 추가적인 경쟁력 확보를 위해 해결해야 하는 문제이다. 본 연구에서는 초고속 물투과 특성과 뛰어난 선택성을 지닌 Graphene oxide (GO)막 에 뛰어난 항균성을 가진 은나노(nAg)가 코팅된 막을 제작, 평가하였다. GO막 은 막오염 저감에 효과적일 수 있는 높은 친수성과 음표면전하와 같은 특성과 막오염에 취약할 수 있는 높은 비표면적과 뛰어난 흡착능력과 같은 특성을 동 시에 가진다. 따라서, 논란의 부분이 있는 GO막의 막오염에 대한 저항성의 확실한 향상을 위해 nAg를 적용하였다.

최근 물 부족 문제가 대두되면서 막기반 해수담수화 기술이 해결책으로 주목 받고 있다. 공정 기술에서 에너지 소모 저감이 핵심으로 고려되고 있는 가운데, 고분자 막기반 해수담수화 공정의 에너지 소모량이 더 이상 줄어들지 않는 정체 현상을 보이면서, 성능 향상 및 에너지 소모량을 줄이기 위한 막개발이 핵심 으로 고려되고 있다. 최근 신소재를 이용한 막개발이 활발한 가운데, 원자수준 의 두께 및 물리/화학적 안정성, 높은 강도 등을 장점으로 하는 그래핀 (Graphene) 막 개발 연구가 진행되고 있다. 본 연구에서는 물질이동 기작을 밝히기 위해 물 및 유기 용매가 그래핀 막에서 가지는 투과 성능을 온도 및 습도 조건을 달리하는 조건에서 측정하고, 이를 바탕으로 그래핀 막의 투과 성능 및 기작에 대해 평가하고자 하였다.

Graphene could be damaged and contain impurities on its surface while several fabrications such as deposition, etching, and patterning because one needs photoresist masking operation to divide the section for deposition or not. In this paper, we investigated the effectiveness of selective atomic layer deposition for clean graphene surface. Atomic layer deposition (ALD) has strong point at very uniform conformity of 1 rms roughness. In this process, H2O is generally used by one of precursors. This H2O precursor make deposition of ALD on hydrophilic surface not hydrophobic. Therefore, we used this property at graphene which has hydrophobic surface. And then, we analyzed selective deposition of ALD on graphene which are grown on Cu foil and transferred by wet process not cleaved from HOPG.

화학기상증착법(CVD)을 이용하여 Cu-foil 위에 합성된 대면적의 단층 그래핀(Graphene)을 폴리머 탄성융합체 PDMS(Polydimethylsiloxane)를 이용하여 건식으로 전사하는 기술을 연구하였다. 이 때, UV/O3처리를 통해 목표 기판(target substrate)의 표면 개질을 변화시켜 그래핀의 손상이 최소화되로록 그래핀을 전사하였다. 이 과정을 반복 실행하여 그래핀을 다층(1∼4 layers)으로 SiO2/Si기판 위에 적층하였으며, 전사된 다층 그래핀의 품질평가를 위하여 광투과율과 면저항의 변화를 측정하였다.

Membrane bioreactor (MBR) and reverse osmosis (RO) process have attracted much attention in the field of wastewater treatment and desalination, respectively. However, MBR has membrane fouling which is the major obstacle in maximizing their efficiency. Also, for the RO process, low energy efficiency still remains unanswered in RO process. In this study, it is demonstrated that the application of graphene oxide (GO) to membrane fabrication can be a novel strategy to overcome the residual problems. In detail, GO was applied to fabrication of polysulfone ultrafiltration membrane for improving anti-biofouling capability of membrane. Furthermore, addition of GO enhanced mechanical strength of highly porous support layer, which enabled the thin-film composite RO membrane to have 1.6 to 4 times higher water flux compared to other RO membranes.

We report the chemical vapor deposition growth characteristics of graphene on various catalytic metal substrates such as Ni, Fe, Ag, Au, and Pt. 50-nm-thick metal films were deposited on SiO2/Si substrates using dc magnetron sputtering. Graphene was synthesized on the metal/SiO2/Si substrates with CH4 gas (1 SCCM) diluted in mixed gases of 10% H2 and 90 % Ar (99 SCCM) using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The highest quality of graphene film was achieved on Ni and Fe substrates at 900˚C and 500 W of ICP power. Ni substrate seemed to be the best catalytic material among the tested materials for graphene growth because it required the lowest growth temperature (600˚C) as well as showing a low ICP power of 200W. Graphene films were successfully grown on Ag, Au, and Pt substrates as well. Graphene was formed on Pt substrate within 2 sec, while graphene film was achieved on Ni substrate over a period of 5 min of growth. These results can be understood as showing the direct CVD growth of graphene with a highly efficient catalytic reaction on the Pt surface.

본 연구에서는, 산화그래핀(GO) 및 산화철이 기능화된 산화그래핀(M-GO)을 용매인 dimethylformamide (DMF)에초음파분쇄법을 이용하여 완전히 분산시킨 후, 기질고분자인 polyacrylonitrile (PAN)에 첨가하여 전기방사함으로써, 나노섬유 형태의 복합분리막을 제조하였다. 제조된 나노섬유 분리막은 적층수를 변화시켜 기공크기를 조절하였다. Scanning Electron Microscope (SEM) 분석 결과로부터 약 500 nm 크기의 고른 직경분포를 가진 나노섬유 복합분리막이 제조되었음을 확인하였다. 또한, Raman spectroscopy 분석과 Energy Dispersive x-ray Spectroscopy (EDS) 분석 결과로부터 GO 및 M-GO가 분리막 내에 분산되어 있음을 확인하였다. 최종 나노섬유 복합분리막은 상용막(0.27 µm, 55%)과 유사한 기공특성(0.21~0.24 µm,40%)을 보여주었으며, 수투과도 측정결과 PAN 막에 비해 약 200% 향상된 성능을 보여주었다. 이러한 결과로부터, 전기방사법으로 제조된 나노섬유 복합분리막은 수처리용 분리막으로서 충분한 활용가능성이 있다고 판단된다.

The contact mechanism of devices is usually researched at electrode contacts. However, the contact between a dielectric and channel at the MOS structure is more important. The graphene was used as a channel material, and the thin film transistor with MOS structure was prepared to observe the contact mechanism. The graphene was obtained on Cu foil by the thermal decomposition method with H2 and CH4 mixed gases at an ambient annealing temperature of 1000˚C during the deposition for 30 min, and was then transferred onto a SiO2/Si substrate. The graphene was doped in a nitrogen acidic solution. The chemical properties of graphene were investigated to research the effect of nitric atoms doping. The sheet resistance of graphene decreased after nitrogen acidic doping, and the sheet resistance decreased with an increase in the doping times because of the increment of negative charge carriers. The nitric-atom-doped graphene showed the Ohmic contact at the curve of the drain current and drain voltage, in spite of the Schottky contact of grapnene without doping.

Graphene oxide has been synthesized by microwave-assisted exfoliation of graphite oxide prepared by modified Hummers method. Graphite was oxidized in a solution of H2O2 and KMnO4 at 65~80˚C, followed by 10 % H2O2 solution treatment at 80~90˚C. The graphite oxide was exfoliated under microwave irradiation of 1 kW and was reduced to graphene effectively by hydrazine hydrate (H4N2·H2O) treatment. The exfoliation of graphene oxide was significantly affected by the microwave irradiation on (heating)/off (cooling) period. An on/off period of 10 s/20 s resulted in much more effective exfoliation than that of 5 s/10 s with the same total treatment time of 10 min. This can be explained by the higher exfoliation temperature of 10 s/20 s. Repetition of the graphite oxidation and exfoliation processes also enhanced the exfoliation of graphene oxide. The thickness of the final graphene products was estimated to be several layers. The D band peaks of the Raman spectra of the final graphene products were quite low, suggesting a high crystal quality.

Graphene oxide powders prepared by two different drying processes, freeze drying and spray drying, were studied to compare the effect of the drying method on the physical properties of graphene oxide powder. The graphene oxide dispersion was prepared from graphite by chemical delamination with the aid of sulfuric acid and permanganic acid, and the dispersion was further washed and re-dispersed in a mixed solvent of water and isopropyl alcohol. A freeze drying method can feasibly minimize damage to the sample, but it requires a long process time. In contrast, spray drying is able to remove a solvent in a relatively short time, though this process requires exposure to a high temperature for a rapid evaporation of the solvent. The powders prepared by freeze drying and spray drying were characterized and compared by Raman spectroscopy, X-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, and by an elemental analysis. The graphene oxide powders showed similar chemical compositions; however, the morphologies of the powders differed in that the graphene oxide prepared by spray drying had a winkled morphology and a higher apparent density compared to the powder prepared by freeze drying. The graphene oxide powders were reduced at 900˚C in an atmosphere of N2. The effect of the drying process on the properties of the reduced graphene oxide was examined by SEM, TEM and Raman spectroscopy.

본 논문은 그래핀의 모드 I 균열 진전에 대한 분자동역학 해석과 수치보조장을 사용하는 영역 투영 방법의 역문제 해석방법을 결합하여 균열 선단 응집 법칙을 평가하는 효율적인 방법을 제시하고 있다. 그래핀의 균열 선단 응집 법칙을 결정하는 것은 균열 선단에서 멀리 떨어진 영역의 변위를 사용하여 균열 면에서 미지의 응집 트랙션과 열림 변위를 구하는 역문제를 해석해야 하는데 상호 J-적분과 M-적분의 경로 보존성과 효율적인 수치보조장을 사용하는 방법을 적용하였다. 분자동역학 해석에서 원자 변위를 유한요소 절점 변위로 이동최소자승법을 사용하여 근사하였으며 안정적인 역문제 해석을 통하여 원자 단위의 거동을 연속체 해석으로 연결시킬 수 있는 새로운 방법을 보여주었다.

Graphene has been synthesized on 100- and 300-nm-thick Ni/SiO2/Si substrates with CH4 gas (1 SCCM) diluted in mixed gases of 10% H2 and 90% Ar (99 SCCM) at 900˚C by using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The film morphology of 100-nm-thick Ni changed to islands on SiO2/Si substrate after heat treatment at 900˚C for 2 min because of grain growth, whereas 300-nm-thick Ni still maintained a film morphology. Interestingly, suspended graphene was formed among Ni islands on 100-nm-thick Ni/SiO2/Si substrate for the very short growth of 1 sec. In addition, the size of the graphene domains was much larger than that of Ni grains of 300-nm-thick Ni/SiO2/Si substrate. These results suggest that graphene growth is strongly governed by the direct formation of graphene on the Ni surface due to reactive carbon radicals highly activated by ICP, rather than to well-known carbon precipitation from carbon-containing Ni. The D peak intensity of the Raman spectrum of graphene on 300-nm-thick Ni/SiO2/Si was negligible, suggesting that high-quality graphene was formed. The 2D to G peak intensity ratio and the full-width at half maximum of the 2D peak were approximately 2.6 and 47cm-1, respectively. The several-layer graphene showed a low sheet resistance value of 718Ω/sq and a high light transmittance of 87% at 550 nm.

유러피언(Eu) 착물을 이용하여 산화 그래핀 시트와 비공유 결합방법을 이용하여 제조하였으며, 산화 그래핀(GOS)뿐만 아니라 혼합된 각각의 물질의 특성을 유러피언(Eu) 착물의 흡착을 확인하였다. 또한, 하이브리드 산화 그래핀(GOS)-유러피언(Eu) 착물의 최종생성물은 생물학적 labeling과 anti-counterfeiting 등 여러 실용적인 분야에 적용 가능한 밝은 적색의 발광을 방출하는 물질이다.

We present a method of graphene synthesis with high thickness uniformity using the thermal chemical vapor deposition (TCVD) technique; we demonstrate its application to a grid supporting membrane using transmission electron microscope (TEM) observation, particularly for nanomaterials that have smaller dimensions than the pitch of commercial grid mesh. Graphene was synthesized on electron-beam-evaporated Ni catalytic thin films. Methane and hydrogen gases were used as carbon feedstock and dilution gas, respectively. The effects of synthesis temperature and flow rate of feedstock on graphene structures have been investigated. The most effective condition for large area growth synthesis and high thickness uniformity was found to be 1000˚C and 5 sccm of methane. Among the various applications of the synthesized graphenes, their use as a supporting membrane of a TEM grid has been demonstrated; such a grid is useful for high resolution TEM imaging of nanoscale materials because it preserves the same focal plane over the whole grid mesh. After the graphene synthesis, we were able successfully to transfer the graphenes from the Ni substrates to the TEM grid without a polymeric mediator, so that we were able to preserve the clean surface of the as-synthesized graphene. Then, a drop of carbon nanotube (CNT) suspension was deposited onto the graphene-covered TEM grid. Finally, we performed high resolution TEM observation and obtained clear image of the carbon nanotubes, which were deposited on the graphene supporting membrane.