Dy3+ and Eu3+-codoped SrWO4 phosphor thin films were deposited on sapphire substrates by radio frequency magnetron sputtering by changing the growth and thermal annealing temperatures. The results show that the structural and optical properties of the phosphor thin films depended on the growth and thermal annealing temperatures. All the phosphor thin films, irrespective of the growth or the thermal annealing temperatures, exhibited tetragonal structures with a dominant (112) diffraction peak. The thin films deposited at a growth temperature of 100 oC and a thermal annealing temperature of 650 oC showed average transmittances of 87.5% and 88.4% in the wavelength range of 500-1100 nm and band gap energy values of 4.00 and 4.20 eV, respectively. The excitation spectra of the phosphor thin films showed a broad charge transfer band that peaked at 234 nm, which is in the range of 200-270 nm. The emission spectra under ultraviolet excitation at 234 nm showed an intense emission peak at 572 nm and several weaker bands at 479, 612, 660, and 758 nm. These results suggest that the SrWO4: Dy3+, Eu3+ thin films can be used as white light emitting materials suitable for applications in display and solid-state lighting.

고성능 투명 전극의 개발은 유기 태양 전지, 유기 발광 다이오드와 같은 저가형 유연 유기 광전자 소자의 개발에 매우 중요하다. 가장 널리 쓰이고 있는 투명전극인 indium tin oxide (ITO)는 비싼 가격과 잘 깨어지는 특성 을 가지고 있어서 저가형 유연 전자 소자의 개발에 많은 제한을 주고 있으며, 이를 극복하기 위한 대체 투명 전극의 개발에 대한 연구가 활발히 진행되고 있다. 은 나노와이어(silver nanowire, AgNW)는 우수한 전기 전도도와 광 투과 도를 가지고 저렴하며 뛰어난 유연성 때문에 ITO의 대체 투명전극으로서 큰 각광을 받고 있다. 그러나 AgNW의 거 친 표면은 유기 광전자 소자의 누설전류를 크게 증가시켜서 소자의 효율을 떨어뜨리기 때문에 이를 극복하는 기술의 개발이 시급한 실정이다. 본 연구에서는 UV 광 경화성 접착제를 이용하여 AgNW를 PET기판으로 transfer 시키는 방법으로 AgNW가 매몰된 유연 전도성 투명 기판을 제작하였으며, 이 기판은 낮은 표면 거칠기, 낮은 면저항과 높은 광투과도를 보여준다. 본 연구에서 개발된 AgNW가 매몰된 유연 전도성 투명 기판은 유기전자소자의 대체투명전극 으로 활용될 수 있는 가능성을 보여준다.

In this study, we investigated the effect of annealing conditions on the ferromagnetic resonance(FMR) of yttrium iron garnet (Y3Fe5O12, YIG) thin film prepared on gadolinium gallium garnet (Gd3Ga5O12, GGG) substrate. The YIG thin films were grown by rf magnetron sputtering at room temperature and were annealed at various temperatures from 700 to 1000 ˚C. FMR characteristics of the YIG thin films were investigated with a coplanar waveguide FMR measurement system in a frequency range from 5 to 20 GHz. X-ray diffraction(XRD) and X-ray photoelectron spectroscopy(XPS) were used to characterize the phase formation, crystal structure and composition of the YIG thin films. Field dependent magnetization curves at room temperature were obtained by using a vibrating sample magnetometer(VSM). The FMR measurements revealed that the resonance magnetic field was highly dependent on the annealing condition: the lowest FMR linewidth can be observed for the 800 ˚C annealed sample, which agrees with the VSM results. We also found that the Fe and O composition changes during the annealing process play important roles in the observed magnetic properties.

In order to select the supporting points for large glass panels used for TFT-LCD monitors, an optimization method selecting the supporing points is presented. In this method we reduce the problem of 1 degree of freedom. ANSYS optimization module is used and optimization criterion is to minimize the maximum deflection.

We report on the succesful fabrication of ZnO nanorod (NR)-based robust piezoelectric nanogenerators(PNGs) by using Cu foil substrate. The ZnO NRs are successfully grown on the Cu foil substrate by using all solutionbased method, a two step hydrothermal synthesis. The ZnO NRs are grown along c-axis well with an average diameterof 75~80 nm and length of 1~1.5 µm. The ZnO NRs showed abnormal photoluminescence specrta which is attributedfrom surface plasmon resonance assistant enhancement at specific wavelength. The PNGs on the SUS substrates showtypical piezoelectric output performance which showing a frequency dependent voltage enhancement and polarity depen-dent charging and discharging characteristics. The output voltage range is 0.79~2.28 V with variation of input strain fre-quency of 1.8~3.9 Hz. The PNG on Cu foil shows reliable output performance even at the operation over 200 timeswithout showing degradation of output voltage. The current output from the PNG is 0.7 µA/cm2 which is a typical out-put range from the ZnO NR-based PNGs. These performance enhancement is attributed from the high flexibility, highelectrical conductivity and excellent heat dissipation properties of the Cu foil as a substrate.

The expansion of the display market could mass-produce the product which becomes the super-slim and ultra-lighting according to the demand of customer. This change etched the mobile display panel in order to make the thin glass. The wet etching refers to the process of removing selectively the unnecessary part in order to form the circuit pattern among the semi-conductor or the LCD manufacturing process. The wet etching can progress the etching about a large amount at a time but the thickness of glass is not smooth or not etched according to the process condition. In this study, the defect factor in the etching process tries to be analyze. The experimental design was established and the processing condition was optimized in order to minimize under non-etch part generation by the experiment of design.

Nematic liquid crystal (NLC) alignment effects on SiOF layers via ion-beam(IB) irradiation for four types of incident energy were successfully studied. The effect of fluorine addition on silicon oxide film properties as a function of SiOF₄/O₂gas flow ration was investigated. The SiOF thin film exhibits good chemical and the thermal stability of the SiOF thin film were sustained as function of the NLC alignment until 200℃. Also, the response-time characteristics of aligned LCD based on SiOF film were studied.

The monolayer engineering diamond particles are aligned on the oxygen free Cu plates with electroless Ni plating layer. The mean diamond particle sizes of 15, 23 and 50 μm are used as thermal conductivity pathway for fabricating metal/carbon multi-layer composite material systems. Interconnected void structure of irregular shaped diamond particles allow dense electroless Ni plating layer on Cu plate and fixing them with 37-43% Ni thickness of their mean diameter. The thermal conductivity decrease with increasing measurement temperature up to 150oC in all diamond size conditions. When the diamond particle size is increased from 15 μm to 50 μm (Max. 304 W/mK at room temperature) tended to increase thermal conductivity, because the volume fraction of diamond is increased inside plating layer.

Glancing angle deposition (GLAD) is a powerful technique to control the morphology and microstructure of thin film prepared by physical vapor deposition. Chromium (Cr) thin films were deposited on a polymer substrate by a sputtering technique using GLAD. The change in thickness and Vickers microhardness for the samples was observed with a change in the glancing angle. The adhesion properties of the critical load (Lc) by a scratch tester for the samples were also measured with varying the glancing angle. The critical load, thickness and Vickers microhardness for the samples decreased with an increase in the glancing angle. However, the thickness of the Cr thin film prepared at a 90o glancing angle showed a relatively large value of 50 % compared to that of the sample prepared at 0o. The results of X-ray diffraction and scanning electron microscopy demonstrated that the effect of GLAD on the microstructure of samples prepared by sputter technique was not as remarkable as the samples prepared by evaporation technique. The relatively small change in thickness and microstructure of the Cr thin film is due to the superior step-coverage properties of the sputter technique.

We report the chemical vapor deposition growth characteristics of graphene on various catalytic metal substrates such as Ni, Fe, Ag, Au, and Pt. 50-nm-thick metal films were deposited on SiO2/Si substrates using dc magnetron sputtering. Graphene was synthesized on the metal/SiO2/Si substrates with CH4 gas (1 SCCM) diluted in mixed gases of 10% H2 and 90 % Ar (99 SCCM) using inductively-coupled plasma chemical vapor deposition (ICP-CVD). The highest quality of graphene film was achieved on Ni and Fe substrates at 900˚C and 500 W of ICP power. Ni substrate seemed to be the best catalytic material among the tested materials for graphene growth because it required the lowest growth temperature (600˚C) as well as showing a low ICP power of 200W. Graphene films were successfully grown on Ag, Au, and Pt substrates as well. Graphene was formed on Pt substrate within 2 sec, while graphene film was achieved on Ni substrate over a period of 5 min of growth. These results can be understood as showing the direct CVD growth of graphene with a highly efficient catalytic reaction on the Pt surface.

We investigated the effects of DMAB (Borane dimethylamine complex, C2H10BN) in electroless Ni-B film with addition of DMAB as reducing agent for electroless Ni plating. The electroless Ni-B films were formed by electroless plating of near neutral pH (pH 6.5 and pH 7) at 50˚C. The electroless plated Ni-B films were coated on screen printed Ag pattern/PET (polyethylene terephthalate). According to the increase of DMAB (from 0 to 1 mole), the deposition rate and the grain size of electroless Ni-B film increased and the boron (B) content also increased. In crystallinity of electroless Ni-B films, an amorphization reaction was enhanced in the formation of Ni-B film with an increasing content of DMAB; the Ni-B film with< 1 B at.% had a weak fcc structure with a nano crystalline size, and the Ni-B films with > 5 B at.% had an amorphous structure. In addition, the Ni-B film was selectively grown on the printed Ag paste layer without damage to the PET surface. From this result, we concluded that formation of electroless Ni-B film is possible by a neutral process (~green process) at a low temperature of 50˚C.

A zinc oxide (ZnO) hybrid structure was successfully fabricated on a glass substrate by metal organic chemical vapor deposition (MOCVD). In-situ growth of a multi-dimensional ZnO hybrid structure was achieved by adjusting the growth temperature to determine the morphologies of either film or nanorods without any catalysts such as Au, Cu, Co, or Sn. The ZnO hybrid structure was composed of one-dimensional (1D) nanorods grown continuously on the two-dimensional (2D) ZnO film. The ZnO film of 2D mode was grown at a relatively low temperature, whereas the ZnO nanorods of 1D mode were grown at a higher temperature. The change of the morphologies of these materials led to improvements of the electrical and optical properties. The ZnO hybrid structure was characterized using various analytical tools. Scanning electron microscopy (SEM) was used to determine the surface morphology of the nanorods, which had grown well on the thin film. The structural characteristics of the polycrystalline ZnO hybrid grown on amorphous glass substrate were investigated by X-ray diffraction (XRD). Hall-effect measurement and a four-point probe were used to characterize the electrical properties. The hybrid structure was shown to be very effective at improving the electrical and the optical properties, decreasing the sheet resistance and the reflectance, and increasing the transmittance via refractive index (RI) engineering. The ZnO hybrid structure grown by MOCVD is very promising for opto-electronic devices as Photoconductive UV Detectors, anti-reflection coatings (ARC), and transparent conductive oxides (TCO).

In this study, modified catalytic chemical vapor deposition (CCVD) method was applied to control the CNTs (carbon nanotubes) growth. Since titanium (Ti) substrate and iron (Fe) catalysts react one another and form a new phase (Fe2TiO5) above 700℃, the decrease of CNT yield above 800℃ where methane gas decomposes is inevitable under common CCVD method. Therefore, we synthesized CNTs on the Ti substrate by dividing the tube furnace into two sections (left and right) and heating them to different temperatures each. The reactant gas flew through from the end of the right tube furnace while the Ti substrate was placed in the center of the left tube furnace. When the CNT growth temperature was set 700/950℃ (left/right), CNTs with high yield were observed. Also, by examining the micro-structure of CNTs of 700/950℃, it was confirmed that CNTs show the bamboo-like structure.

This study is research on the thermal emissivity depending on the alignment degrees of graphite flakes. Samples were manufactured by a slurry of natural graphite flakes with organic binder and subsequent dip-coating on an aluminum substrate. The alignment degrees were controlled by applying magnetic field strength (0, 1, and 3 kG) to the coated samples. The alignment degree of the sample was measured by XRD. The thermal emissivity was measured by an infrared thermal image camera at 100˚C. The alignment degrees were 0.04, 0.11, and 0.17 and the applied magnetic field strengths were 0, 1, and 3 kG, respectively. The thermal emissivities were 0.829, 0.837, and 0.844 and the applying magnetic field strengths were 0, 1, and 3 kG, respectively. In this study the correlation coefficient, R2, between thermal emissivity and alignment degree was 0.997. Therefore, it was concluded that the thermal emissivities are correlated with the alignment degree of the graphite flakes.

We investigated the characteristics of electroless plated Cu films on screen printed Ag/Anodized Al substrate. Cu plating was attempted using neutral electroless plating processes to minimize damage of the anodized Al substrate; this method used sodium hypophosphite instead of formaldehyde as a reducing agent. The basic electroless solution consisted of CuSO4·5H2O as the main metal source, NaH2PO2·H2O as the reducing agent, C6H5Na3O7·2H2O and NH4Cl as the complex agents, and NiSO4·6H2O as the catalyser for the oxidation of the reducing agent, dissolved in deionized water. The pH of the Cu plating solutions was adjusted using NH4OH. According to the variation of pH in the range of 6.5~8, the electroless plated Cu films were coated on screen printed Ag pattern/anodized Al/Al at 70˚C. We investigated the surface morphology change of the Cu films using FE-SEM (Field Emission Scanning Electron Microscopy). The chemical composition of the Cu film was determined using XPS (X-ray Photoelectron Spectroscopy). The crystal structures of the Cu films were investigated using XRD (X-ray Diffraction). Using electroless plating at pH 7, the structures of the plated Cu-rich films were typical fcc-Cu; however, a slight Ni component was co-deposited. Finally, we found that the formation of Cu film plated selectively on PCB without any lithography is possible using a neutral electroless plating process.

Carbon coils could be synthesized using C₂H₂/H₂as source gases and SF6 as an incorporated additive gas under thermal chemical vapor deposition (CVD) system. Prior to the carbon coils deposition reaction, two kinds of samples having different combination of Ni catalyst and substrate were employed, namely, a commercially-made Al₂O₃ceramic boat with Ni powders and a commercially-made Al₂O₃substrate with Ni layer. By using a commercially-made Al₂O₃ceramic boat, the synthesis of carbon coils could be enhanced as much as 10 times higher than that of Al₂O₃substrate. Furthermore, the dominant formation of the microsized carbon coils could be obtained by using Al₂O₃ceramic boat. The surface roughness of the supporting substrate of Al₂O₃ceramic boat was understood to be associated with the large scale synthesis of carbon oils as well as the dominant formation of the larger-sized, namely the microsized carbon coils.

We investigated the nanostructural, chemical and optical properties of nc-Si:H films according to deposition conditions. Plasma enhanced chemical vapor deposition(PECVD) techniques were used to produce nc-Si:H thin films. The hydrogen dilution ratio in the precursors, [SiH4/H2], was fixed at 0.03; the substrate temperature was varied from room temperature to 600˚C. By raising the substrates temperature up to 400˚C, the nanocrystalite size was increased from ~2 to ~7 nm and the Si crystal volume fraction was varied from ~9 to ~45% to reach their maximum values. In high-resolution transmission electron microscopy(HRTEM) images, Si nanocrystallites were observed and the crystallite size appeared to correspond to the crystal size values obtained by X-ray diffraction(XRD) and Raman Spectroscopy. The intensity of high-resolution electron energy loss spectroscopy(EELS) peaks at ~99.9 eV(Si L2,3 edge) was sensitively varied depending on the formation of Si nanocrystallites in the films. With increasing substrate temperatures, from room temperature to 600˚C, the optical band gap of the nc-Si:H films was decreased from 2.4 to 1.9 eV, and the relative fraction of Si-H bonds in the films was increased from 19.9 to 32.9%. The variation in the nanostructural as well as chemical features of the films with substrate temperature appears to be well related to the results of the differential scanning calorimeter measurements, in which heat-absorption started at a substrate temperature of 180˚C and the maximum peak was observed at ~370˚C.

In this study, BaTiO3 thin films were grown by RF-magnetron sputtering, and the effects of the thin film thickness on the structural characteristics of BaTiO3 thin films were systematically investigated. Instead of the oxide substrates generally used for the growth of BaTiO3 thin films, p-Si substrates which are widely used in the current semiconductor processing, were used in this study in order to pursue high efficiency in device integration processing. For the crystallization of the grown thin films, annealing was carried out in air, and the annealing temperature was varied from 700˚C. The changed thickness was within 200 nm~1200 nm. The XRD results showed that the best crystal quality was obtained for ample thicknesses 700 nm~1200 nm. The SEM analysis revealed that Si/BaTiO3 are good quality interface characteristics within 300 nm when observed thickness. And surface roughness observed of BaTiO3 thin films from AFM measurement are good quality surface characteristics within 300 nm. Depth-profiling analysis through GDS (glow discharge spectrometer) showed that the stoichiometric composition could be maintained. The results obtained in this study clearly revealed BaTiO3 thin films grown on a p-Si substrate such as thin film thickness. The optimum thickness was 300 nm, the thin film was found to have the characteristics of thin film with good electrical properties.

Magnetostrictive thin films can be applied in transmission system for the enhancement of energy efficiency. In this study, four kinds of substrates (Si, glass, Fe, polyimide) with the magnetostrictive thin film layers are prepared and investigated to characterize the magnetic and mechanical behaviors due to the substrates effects. The fabricated substrates have thicknesses of 50, 150 and 500um with cantilever shape. TbDyFe films are deposited by DC magnetron sputtering with 1～10m thick. The deposited film thicknesses are verified using X-ray diffraction. The magnetization of each sample is examined using VSM(Vibrating Sample Magnetometer) and magnetostriction is also measured using capacitance method to characterize magneto-mechanical behaviors. The magnetostriction results as deflections are compared and the results are discussed for micro actuator applications.

Vanadium dioxide (VO2) is an attractive material for smart window applications where the transmittance of light can be automatically modulated from a transparent state to an opaque state at the critical temperature of ~68˚C. Meanwhile, F : SnO2 (F-doped SnO2, FTO) glass is a transparent conductive oxide material that is widely used in solar-energy-related applications because of its excellent optical and electrical properties. Relatively high transmittance and low emissivity have been obtained for FTO-coated glasses. Tunable transmittance corresponding to ambient temperature and low emissivity can be expected from VO2 films deposited onto FTO glasses. In this study, FTO glasses were applied for the deposition of VO2 thin films by pulsed DC magnetron sputtering. VO2 thin films were also deposited on a Pyrex substrate for comparison. To decrease the phase transition temperature of VO2, tungsten-doped VO2 films were also deposited onto FTO glasses. The visible transmittance of VO2/FTO was higher than that of VO2/pyrex due to the increased crystallinity of the VO2 thin film deposited on FTO and decreased interface reflection. Although the solar transmittance modulation of VO2/FTO was lower than that of VO2/pyrex, room temperature solar transmittance of VO2/FTO was lower than that of VO2/pyrex, which is advantageous for reflecting solar heat energy in summer.