목적 : 소다-라임-실리카 유리(soda-lime-silica glass,SG) 기판위에 Ti, Ba-naphthenates를 출발원료로 사용하고 졸겔법으로 나노 결정질 TiO2, BaTiO3 박막을 제조하였다. 박막의 특성을 분석하기 위하여 X-선 회절 분석, 전자현미경, UV스펙트럼을 이용하여 연구하였다. 방법 : 코팅용액을 soda-lime-silica glass 기판 위에 스핀코팅하고 공기분위기에서 500℃에서 열분해시켜 박막을 제조하였다. 제조된 TiO2, BaTiO3 박막의 결정화도는 고분해능 X-선 회절분석법으로 그리고 표면미세구조와 거칠기는 전계 방출 현미경과 원자간력 현미경으로 또 자외선(200〜380 nm), 가시광선(380〜750 nm), 적외선(750〜900 nm) 영역의 투과율은 UV-Visible-NIR 분광광도계로 측정되었다. 결과 : TiO2박막은 아나타제 상이 존재하였으며, BaTiO3 박막은 최고 피크가 확인되지 않았다. 열처리한 TiO2, BaTiO3 박막의 가시광선 투과율은 80% 이상의 투과율을 나타냈으며, BaTiO3 박막은 TiO2 박막보다 자외선 및 청광 차단율이 높았다. 결론 : BaTiO3 박막은 TiO2 보다 자외선 및 청광에 대해 더 높은 차단율이 나타냈으며, 가시광선 투과율은 제조된 모든 박막에서 80% 이상의 투과율이 측정되었다.

In this study, BaTiO3 thin films were grown by RF-magnetron sputtering, and the effects of the thin film thickness on the structural characteristics of BaTiO3 thin films were systematically investigated. Instead of the oxide substrates generally used for the growth of BaTiO3 thin films, p-Si substrates which are widely used in the current semiconductor processing, were used in this study in order to pursue high efficiency in device integration processing. For the crystallization of the grown thin films, annealing was carried out in air, and the annealing temperature was varied from 700˚C. The changed thickness was within 200 nm~1200 nm. The XRD results showed that the best crystal quality was obtained for ample thicknesses 700 nm~1200 nm. The SEM analysis revealed that Si/BaTiO3 are good quality interface characteristics within 300 nm when observed thickness. And surface roughness observed of BaTiO3 thin films from AFM measurement are good quality surface characteristics within 300 nm. Depth-profiling analysis through GDS (glow discharge spectrometer) showed that the stoichiometric composition could be maintained. The results obtained in this study clearly revealed BaTiO3 thin films grown on a p-Si substrate such as thin film thickness. The optimum thickness was 300 nm, the thin film was found to have the characteristics of thin film with good electrical properties.

In this study, BaTiO3 thin films were grown by RF-magnetron sputtering, and the effects of a post-annealing process on the structural characteristics of the BaTiO3 thin films were investigated. For the crystallization of the grown thin films, post-annealing was carried out in air at an annealing temperature that varied from 500-1000˚C. XRD results showed that the highest crystal quality was obtained from the samples annealed at 600-700˚C. From the SEM analysis, no crystal grains were observed after annealing at temperatures ranging from 500 to 600˚C; and 80 nm grains were obtained at 700˚C. The surface roughness of the BaTiO3 thin films from AFM measurements and the crystal quality from Raman analysis also showed that the optimum annealing temperature was 700˚C. XPS results demonstrated that the binding energy of each element of the thin-film-type BaTiO3 in this study shifted with the annealing temperature. Additionally, a Ti-rich phenomenon was observed for samples annealed at 1000˚C. Depth-profiling analysis through a GDS (glow discharge spectrometer) showed that a stoichiometric composition could be obtained when the annealing temperature was in the range of 500 to 700˚C. All of the results obtained in this study clearly demonstrate that an annealing temperature of 700˚C results in optimal structural properties of BaTiO3 thin films in terms of their crystal quality, surface roughness, and composition.