The adsorption process using GAC is one of the most secured methods to remove of phosphate from solution. This study was conducted by impregnating Cu(II) to GAC(GAC-Cu) to enhance phosphate adsorption for GAC. In the preparation of GAC-Cu, increasing the concentration of Cu(II) increased the phosphate uptake, confirming the effect of Cu(II) on phosphate uptake. A pH experiment was conducted at pH 4-8 to investigate the effect of the solution pH. Decrease of phosphate removal efficiency was found with increase of pH for both adsorbents, but the reduction rate of GAC-Cu slowed, indicating electrostatic interaction and coordinating bonding were simultaneously involved in phosphate removal. The adsorption was analyzed by Langmuir and Freundlich isotherm to determine the maximum phosphate uptake(qm) and adsorption mechanism. According to correlation of determination(R2), Freundlich isotherm model showed a better fit than Langmuir isotherm model. Based on the negative values of qm, Langmuir adsorption constant(b), and the value of 1/n, phosphate adsorption was shown to be unfavorable and favorable for GAC and GAC-Cu, respectively. The attempt of the linearization of each isotherm obtained very poor R2. Batch kinetic tests verified that ~30% and ~90 phosphate adsorptions were completed within 1 h and 24 h, respectively. Pseudo second order(PSO) model showed more suitable than pseudo first order(PFO) because of higher R2. Regardless of type of kinetic model, GAC-Cu obtained higher constant of reaction(K) than GAC.

We developed the copper core ball electroplated with Sn-Ag-Cu of the eutectic composition which used mostly as Pb free solder ball with high reliability. In order to search for the practicality of this developed copper core ball, the evaluation was executed by measuring the initial joint strength of the sample mounted on the substrate and reflowed and by measuring the joint strength of the sample after the high temperature leaving test and the constant temperature and the humidity leaving test. This evaluation was compered with those of the usual other copper core balls electroplated with (Sn,Sn-Ag,Sn-Cu,Sn-Bi) and the Sn-Ag-Cu solder ball.

We studied formation of nanostructured -Cu composites under shock wave conditions. We investigated the influence of preliminary mechanical activation (MA) of Ti-B-Cu powder mixtures on the peculiarities of the reaction between Ti and B under shock wave. In the MA-ed mixture the reaction proceeded completely while in the non-activated mixture the reagents remained along with the product . titanium diboride. The size of titanium diboride particles in the central part of the compact was 100-300 nm.

Dimensional change of compact made from (Fe-Cu) prealloyed powder and copper powder compared to that of compact made from iron-copper elemental powder. The compact made from the prealloyed powder with a copper content of 7.18mass% which is nearly equal to its solution limit and copper powder showed only the large contraction in spite of penetration of liquid copper into grain boundary of the prealloyed powder. But the compact made from iron-copper elemental powder showed the large expansion in spite of same chemical composition with former case.

Thermolysis of Cu(NO3)2·3H2O impregnated activated carbon fiber (ACF) was studied by means of XRD analysis to obtain Cu-impregnated ACF. Cu(NO3)2·3H2O was converted into Cu2O around 230℃. The Cu2O was reduced to Cu at 400℃, resulting in ACF-C(Cu). Some Cu particles have a tendency to aggregate through the heat treatment, resulting in the ununiform distribution in ACF. Catalytic decomposition of NO gas has been performed by Cu-impregnated ACF in a column reactor at 400℃. Initial NO concentration was 1300 ppm diluted in helium gas. NO gas was effectively decomposed by 5~10 wt% Cu-impregnated ACF at 400℃. The concentration of NO was maintained less than 200 ppm for 6 hours in this system. The ACF-C(Cu) deoxidized NO to N2 and was reduced to ACF-C(Cu2O) in the initial stage. The ACF-C(Cu2O) also deoxidized NO to N2 and reduced to ACF-C(CuO). This ACF-C(CuO) was converted again into ACF-C(Cu) by heating. There was no consumption of ACF in mass during thermolysis and catalytic decomposition of NO to N2 by copper. The catalytic decomposition was accelerated with increase of the reaction temperature.

(hfac)Cu(1, 5-DMCOD)(1, 1, 1, 5, 5, 5-Hexafluoro-2, 4-pentanedionato Cu(I) 1, 5-dimethyl-cyclooctadine) 전구체와 He 운반기체를 이용하여 MOCVD(Metal Organic Chemical Vapor Deposition) 방법으로 Cu 박막을 형성하였으며, He 운반기체와 함께 H2 gas 및 H(hfac) Ligand의 첨가가 Cu 박막 형성에 미치는 영향에 대하여 조사하였다. He운반기체만을 사용한 경우, Cu 박막의 증착율은 기판온도 180~230˚C에서 20~125Å/min 정도로 낮은 값을 보였으며, 특히 기판온도 190˚C에서는 매우 얇은 두께 (700Å)이면서 낮은 비저항(2.8μΩcm)을 갖는 Cu 박막이 형성됨을 알 수 있었다 He 운반기체와 함께 환원가스(H2) 및 화학첨가제 (H (hfac) ligand)의 첨가 실험에서는 낮은 기판온도 (180~190˚C) 구간에서 현저하게 증착율이 증가하였으며 얇은 두께 (~500Å)의 Cu 박막이 낮은 비저항(3.6~2.86μΩcm)을 갖는 것으로 나타났다. 또한 얇은 두께의 MOCVD Cu박막들의 표면 반사도(reflectance)는 300˚C에서 열처리한 sputter Cu의 반사도에 근접하는 우수한 surface morphology를 보였다 결국, (hfac)Cu(1,6-DMCOD) 전구체를 이용하여 얻어진 MOCVD Cu박막은 얇은 두께에서 낮은 비저항을 갖는 우수한 막질을 보였으며, Electrochemical deposition공정에서 conformal seed layer로써의 적용이 가능할 것으로 기대된다.

(hfac)Cu(vtmos) [C10H13O5CuF6Si: 1,1,1,5,5,5-hexafluoro-2,4- pentadionato (vinyltrimethoxysilane) copper (I)] 구리원을 액체분사법으로 공급하여 반응성 스퍼터 증착된 PVD-TiN과 급속열처리 변환된 RTP-TiN 기판상에 구리를 유기금속 화학증착법으로 성장시키고, 증착조건과 기판 종류가 박막의 증착율, 결정구조 및 미세조직, 전기비저항 등에 미치는 영향을 분석하였다. 구리원 유량 0.2ccm에서 증착반응은 Ar 유량 200sccm까지 물질전달 지배과정과 전압 1.0Torr 이상에서 기화기에서의 공급율속을 보였다. 전압 0.6Torr일 때 활성화에너지는 155~225˚C의 표면반응 지배영역에서 12.7~14.1kcal/mol의 값을 나타내었으며, 225˚C 이상의 기판온도에서는 H2 첨가에 따른 증착율 개선이 간응한 것으로 판단되었다. 증착층은 기판온도 증가에 따라 3차원 island 양식으로 성장하였으며, 증착초기 구리 핵생성밀도가 큰 RTP-TiN상 증착층이 PVD-TiN상보다 현저한 (111) 우선방위와 낮은 전기비저항값을 나타내었다. 구리박막의 전기비저항은 결정립간 연결성이 양호한 165˚C에서 가장 낮았으며, 증착온도에 따른 박막 미세구조 변화로 인해 그 거동은 3개의 영역으로 구분되어 나타났다.

본 연구에서는 기존에 알려진 구리 전구체와 새롭게 개발된 전구체인 hfac (hexafluoroacetylacetonate) Cu(I) DMB (3,3-dimethyl-1-butene)를 비교 평가해보았다. (Hfac)Cu(I) (DMB)의 증가압은 40˚C에서 3 torr 정도로 기존에 잘 알려진 (hfac)Cu(I) vinyltrimethylsilane (VTMS) 보다 10배 정도 높은 것으로 나타났으며 그럼에도 불구하고 상당히 안정하여 65˚C에서 일주일 이상 가열하여도 변하지 않았다. 이 전구체로 100-280˚C에서 구리 박막을 증착할 수 있었으며 150-250˚C온도 범위에서 2.0μΩ-cm의 순수한 구리 박막을 얻었다. 구리 박막의 증착 속도는 기존의 전구체보다 7~8배 정도 높은 것으로 나타났다.

The microstructure of the reagion of carters, created by Cu and W-Cu shaped charge jets, in a 1020 mild steel target has been intestiaged. The region ahead of the crater created by the Cu shaped charge jet, reveals dramatic grain refinement implying the occurrence of a dynamic recrystallization, while that of W-Cu one dose a martensitic transformation indicative of heating up to an austenitic region followed by rapid cooling.The impacting pressure calculated when the W-Cu shaped charge jet encounters the target is higher than that of the Cu one. The micro-hardness of the region ahead of the crater created by the W-Cu shaped charge jet is also higher than that of the Cu one. The microstructure of W-Cu slug remained in the inside of the craters depicts the occurrence of the remarkable elongation of W particles during the liner collaphse. From these results, the microstructural variation of the region ahead of the crater with Cu and W-Cu shaped charge jets is discussed in trems of the pressure dependency of the transformation region of ferrite and austenite phases.

Cu(hfac)2,(Cu(II) hexafluoroacetylacetonate)를 프리커서로 하는 구리 화학증착에 대해 자유에너지 최소화법으로 열역학적 평형조성 계산을 수행하였다. Cu(hfac)2-Ar계의 경우Cu(hfac)2 프리커서 자체의 열분해로부터 모든 공정조건에서 증착박막내로의 탄소 출입이 관찰되었다. Cu(hfac)2-H2,계에서는 Cu(hfac)2-Ar계보다 낮은 온도에서 구리박막이 증착되며, H2입력비 및 반응온도의 증가에 따라 응축상의 석출형태는 C(s)+CuF(s)로부터 C(s)+CuF(s)+Cu(s), C(s)+Cu(s), Cu(s), C(s)의 순으로 변화되는 것으로 나타났다.

본 연구에서는 Cu-Cu2O의 공정반응에 의한 구리와 알루미나의 직접접합에 대하여 연구 하였다. 1.5×10-1torr, 1015˚C에서 산화시킨 후 10-3torr, 1075˚C에서 접합시킨 시편의 접합력과 계면특성을 인장시험, SEM, EDS 및 XRD를 통하여 분석하였다. 3분 산화시켜 접합하면 우수한 접합강도를 보이며 산화시간이 이보다 짧거나 길면 결합력은 저하하였다. 과단은 알루미나 공정조직 계면에서 발생하였으며 파단후 Al2O3표면에는 Cu쪽에서 빠져나간 Cu2O nodule의 존재하였는 바 접합력은 Cu2O-Al2O3계면보다는 Cu-Cu2O계면에 좌우됨을 보여주고 있다. 접합력은 접합시간에 따라 완만한 증가를 보였으며 CuAl2O4및 CuAlO2의 반응생성물이 접합중 형성되었다.

전기분해로 회수된 음극회수-금속분말의 광물학적 특성을 조사하기 위하여 전해질 종류, 전극간격 및 전류변화에 대하여 전기분해 실험을 수행하였다. 황산구리(CuSO4˙5H2O) 분말에 대한 황산 및 소금 전해질 용액을 사용한 전기분해 결과, 소금 전해질 용액에서 Cu의 수율이 다소 높았다. XRD 분석결과, 전해질 용액의 종류에 따라 광종이 변화되었다. 즉 구리(Cu0), chalcanthite 및 cuprite 등은 황산 전해질 용액에서, 그리고 구리, nantokite 및 chalcanthite 등은 소금 전해질 용액에서 나타나는 것을 확인하였다. 특히 소금 전해질 용액에서, 전극간격 및 전류(또는 전류밀도)는 Cu 회수율, 양극무게 감소와 비례하였으나 양극부식 강도는 전류와 비례 그리고 전극간격과는 반비례하는 경향을 보였다. 미분쇄하지 않은 음극-회수 금속분말에 대한 XRD분석에서 구리결정의 평균크기는 전극간격의 감소 및 전류가 증가할수록 증가하였다. 수지상 구리가 형성되는 것으로 보아 전극/용액 경계면에서 물질전달은 확산에 의해 통제되는 것으로 사료된다.

Shingal reservoir is a relatively small (211ha) and shallow impoundment, and approximately 25 ha of its sediment is exposed after spring drawdown. At least 14 vascular plant species germinate on the exposed sediment, but Persicaria vulgaris Webb et Moq. quickly dominates the vegetation. In order to estimate the role of the vegetation in the dynamics of heavy metal pollutants in the reservoir, Cu concentration of water, fallout particles, exposed sediment, and tissues of P. vulgaris, was analyzed. Cu content in reservoir water decreased from 13.10㎎/㎡ on May 15 (before drawdown) to 3.08㎎/㎡ in June 1 (after drawdown), mainly due to the lowering of water level. Average atmospheric deposition of Cu by fallout particles was 10.84 μ g/㎡/day. Cu content in the surface 15㎝ of exposed sediment decreased from 5.094g/㎡ right after drawdown, to 0.530g/㎡ in 41 days, which is a 89.6% decrease. Therefore up to 99.7% of Cu in the reservoir appears to exist in the sediment, only 0.3% in water. If the rate of atmospheric input by fallout particles is assumed to have been the same since 1958, when the reservoir was completed, cumulative input of Cu during the 38 years would have been 150.35㎎/㎡, which is only 3.0% of Cu content in sediment right after drawdown. Therefore, most of Cu in the Shingal reservoir must have been transported by the Shingal-chun flowing into the reservoir. Standing crop of vegetation on the exposed sediment 41 days after drawdown was 730.67g/㎡, of which 630.91g/㎡ was P. vulgaris alone, and Cu content in P. vulgaris at this time was 6.612㎎/㎡. This was only 0.13% of Cu in the exposed sediment, but was 50.5% of Cu in water before drawdown, or 167% of the average annual input of Cu by atmospheric deposition. If other plants were assumed to absorb Cu to the same concentration as P. vulgaris, total amount of Cu absorbed in 41 days by vegetation on the exposed sediment is estimated to be 1913.3 g, which is a considerable contribution to the purification of the reservoir water.