Glancing angle deposition (GLAD) is a powerful technique to control the morphology and microstructure of thin film prepared by physical vapor deposition. Chromium (Cr) thin films were deposited on a polymer substrate by a sputtering technique using GLAD. The change in thickness and Vickers microhardness for the samples was observed with a change in the glancing angle. The adhesion properties of the critical load (Lc) by a scratch tester for the samples were also measured with varying the glancing angle. The critical load, thickness and Vickers microhardness for the samples decreased with an increase in the glancing angle. However, the thickness of the Cr thin film prepared at a 90o glancing angle showed a relatively large value of 50 % compared to that of the sample prepared at 0o. The results of X-ray diffraction and scanning electron microscopy demonstrated that the effect of GLAD on the microstructure of samples prepared by sputter technique was not as remarkable as the samples prepared by evaporation technique. The relatively small change in thickness and microstructure of the Cr thin film is due to the superior step-coverage properties of the sputter technique.

Silicon carbide(SiC) layer is particularly important tri-isotropic (TRISO) coating layers because it acts as a miniature pressure vessel and a diffusion barrier to gaseous and metallic fission products in the TRISO coated particle. The high temperature deposition of SiC layer normally performed at 1500-1650˚C has a negative effect on the property of IPyC layer by increasing its anisotropy. To investigate the feasibility of lower temperature SiC deposition, the influence of deposition temperature on the property of SiC layer are examined in this study. While the SiC layer coated at 1500˚C obtains nearly stoichiometric composition, the composition of the SiC layer coated at 1300-1400˚C shows discrepancy from stoichiometric ratio(1:1). 3-7μm grain size of SiC layer coated at 1500˚C is decreased to sub-micrometer (＜ 1μm) -2μm grain size when coated at 1400˚C, and further decreased to nano grain size when coated at 1300-1350˚C. Moreover, the high density of SiC layer (≥3.19g/cm3) which is easily obtained at 1500˚C coating is difficult to achieve at lower temperature owing to nano size pores. the density is remarkably decreased with decreasing SiC deposition temperature.

A zinc oxide (ZnO) hybrid structure was successfully fabricated on a glass substrate by metal organic chemical vapor deposition (MOCVD). In-situ growth of a multi-dimensional ZnO hybrid structure was achieved by adjusting the growth temperature to determine the morphologies of either film or nanorods without any catalysts such as Au, Cu, Co, or Sn. The ZnO hybrid structure was composed of one-dimensional (1D) nanorods grown continuously on the two-dimensional (2D) ZnO film. The ZnO film of 2D mode was grown at a relatively low temperature, whereas the ZnO nanorods of 1D mode were grown at a higher temperature. The change of the morphologies of these materials led to improvements of the electrical and optical properties. The ZnO hybrid structure was characterized using various analytical tools. Scanning electron microscopy (SEM) was used to determine the surface morphology of the nanorods, which had grown well on the thin film. The structural characteristics of the polycrystalline ZnO hybrid grown on amorphous glass substrate were investigated by X-ray diffraction (XRD). Hall-effect measurement and a four-point probe were used to characterize the electrical properties. The hybrid structure was shown to be very effective at improving the electrical and the optical properties, decreasing the sheet resistance and the reflectance, and increasing the transmittance via refractive index (RI) engineering. The ZnO hybrid structure grown by MOCVD is very promising for opto-electronic devices as Photoconductive UV Detectors, anti-reflection coatings (ARC), and transparent conductive oxides (TCO).

가상의 심지층 처분 부지에서 이루어진 지하수 유동 모의 결과를 이용하여 처분 심도의 지하수 유량 분포를 분석하고 그 결 과를 처분 안전성 평가에 이용할 수 있는 방안을 제시하였다. 처분 심도의 지하수 유동량은 가상의 처분 부지를 대상으로 한 광역 및 국지적 지하수 유동 모의 결과의 지하수두 분포를 이용하여 분석하였다. 지하수 유동량 분포를 이용하여 처분공 위 치의 지하수 유동량을 분석하고 최대값을 기준으로 지하수 유동량을 표준화하여 처분공에서의 처분 용기 파손 가능성을 확 률적으로 도시하였다. 확률적으로 제시된 처분 용기의 파손 가능성을 이용하여, 처분 용기로부터 누출이 일어날 것으로 가 정된 위치에서 지표 환경으로 이동하는 방사성 핵종의 이동량에 대한 확률론적 기대값을 계산하여 결정론적으로 평가된 이 전 연구 결과와 비교하였다. 이런 평가 방법은 현장 조건을 더욱 많이 반영할 수 있는 안전성 평가 방안 구축에 기여할 수 있 을 것으로 생각된다.

화산재의 확산 특성을 분석하고, 침적량의 예측 가능성을 평가하기 위하여, 2011년 1월26일 분화가 시작된 일본 기리시마 화산을 대상으로 WRF와 확산모형 FLEXPART를 이용한 수치모의실험을 실시하였다. 지상 1 km 이하 대기경계층내의 화산재 확산 특성은 26일 방출된 입자의 경우 주풍을 따라 집중되는 경향을 보이지만, 27일 방출된 화산재는 큐슈남부에 발달한 고기압의 영향으로 기리시마 만까지 확산된다. 겨울철의 강한 시베리아 기단이 발달한 26일의 경우, 기리시마 화산 풍하측에 위치한 미야기 현 중앙 산악 후면의 좁은 영역에서 집중적으로 침적이 이루어진다. 또한 분화 지역 주변의 국지적인 고기압의 발달은 화산재의 수평 확산을 증대시키는 역할을 한다. 침적량의 분포는 정량적인 측면에서 실제 화산 분출에 따른 영향과 매우 유사한 경향성을 보이고, 제시한 수치모의실험은 화산재의 이동 및 침적량 예측 및 산정에 적절하다고 판단된다.

Exceptional progress has been made with chemical vapor deposition (CVD) of graphene in the past few years. Not only has good monolayer growth of graphene been achieved, but large-area synthesis of graphene sheets has been successful too. However, the polycrystalline nature of CVD graphene is hampering further progress as graphene property degrades due to presence of grain boundaries. This review will cover factors that affect nucleation of graphene and how other scientists sought to obtain large graphene domains. In addition, the limitation of the current research trend will be touched upon as well.

Metallic Cr film coatings of 1.2μm thickness were prepared by DC magnetron sputter deposition method on c-plane sapphire substrates. The thin Cr films were ammoniated during horizontal furnace thermal annealing for 10-240 min in NH3 gas flow conditions between 400 and 900˚C. After annealing, changes in the crystal phase and chemical constituents of the films were characterized using X-ray diffraction (XRD) and energy dispersive X-ray photoelectron spectroscopy (XPS) surface analysis. Nitridation of the metallic Cr films begins at 500˚C and with further increases in annealing temperature not only chromium nitrides (Cr2N and CrN) but also chromium oxide (Cr2O3) was detected. The oxygen in the films originated from contamination during the film formation. With further increase of temperature above 800˚C, the nitrogen species were sufficiently supplied to the film's surface and transformed to the single-phase of CrN. However, the CrN phase was only available in a very small process window owing to the oxygen contamination during the sputter deposition. From the XPS analysis, the atomic concentration of oxygen in the as-deposited film was about 40 at% and decreased to the value of 15 at% with increase in annealing temperature up to 900˚C, while the nitrogen concentration was increased to 42 at%.

Fe-based amorphous coatings were fabricated on a soda-lime glass substrate by the vacuum kinetic spray method. The effect of the gas flow rate, which determines particle velocity, on the deposition behavior of the particle and microstructure of the resultant films was investigated. The as-fabricated microstructure of the film was studied by field emission scanning electron microscopy (FE-SEM) and high resolution transmission electron microscopy (HR-TEM). Although the activation energy for transformation from the amorphous phase to crystalline phase was lowered by severe plastic deformation and particle fracturing under a high strain rate, the crystalline phases could not be found in the coating layer. Incompletely fractured and small fragments 100~300 nm in size, which are smaller than initial feedstock material, were found on the coating surface and inside of the coating. Also, some pores and voids occurred between particle-particle interfaces. In the case of brittle Fe-based amorphous alloy, particles fail in fragmentation fracture mode through initiation and propagation of the numerous small cracks rather than shear fracture mode under compressive stress. It could be deduced that amorphous alloy underwent particle fracturing in a vacuum kinetic spray process. Also, it is considered that surface energy caused by the formation of new surfaces and friction energy contributed to the bonding of fragments.

High-quality β-silicon carbide (SiC) coatings are expected to prevent the oxidation degradation of carbon fibers in carbon fiber/silicon carbide (C/SiC) composites at high temperature. Uniform and dense β-SiC coatings were deposited on carbon fibers by low-pressure chemical vapor deposition (LP-CVD) using silane (SiH4) and acetylene (C2H2) as source gases which were carried by hydrogen gas. SiC coating layers with nanometer scale microstructures were obtained by optimization of the processing parameters considering deposition mechanisms. The thickness and morphology of β-SiC coatings can be controlled by adjustment of the amount of source gas flow, the mean velocity of the gas flow, and deposition time. XRD and FE-SEM analyses showed that dense and crack-free β-SiC coating layers are crystallized in β-SiC structure with a thickness of around 2 micrometers depending on the processing parameters. The fine and dense microstructures with micrometer level thickness of the SiC coating layers are anticipated to effectively protect carbon fibers against the oxidation at high-temperatures.

본 연구는 다양한 수준의 셀레늄 강화 청보리 사일리지 와 무기셀레늄을 급여 시 비육기 거세한우의 생산성, 혈액 성상, 도체특성 및 조직 내 셀레늄 축적에 미치는 영향을 조사하였다. 시험은 거세비육우 20두를 공시하였고, 처리구 는 셀레늄 수준에 따라 0.1 ppm Se(대조구), 0.3 ppm Se (T1), 0.9 ppm Se (T2) 및 무기셀레늄 0.9 ppm Se (T3) 급 여구로 4처리를 나누어 처리구 구당 5두씩 완전임의 배치 하여 90일간 사양시험을 실시하였다. 각 시험사료는 셀레 늄 강화 및 셀레늄 무처리 관행 청보리 사일리지를 조합하 여 건물기준 30% 함유하도록 배합하였다. 실험사료 내에 셀레늄 강화수준은 사료섭취량과 증체에 영향을 미치지 않 았고, 혈중 총 지질과 중성지방농도는 대조구보다 T2구가 유의하게 낮았다(p<0.05). 혈중 면역글로불린은 셀레늄함유 량이 많을수록 높게 나타나 T2와 T3구가 대조구보다 유의 하게 높았다(p<0.05). 혈중 셀레늄농도는 유기태 셀레늄을 0.9 ppm 급여한 T2구가 가장 높았다(p<0.05). 도체율, 배최 장근, 등지방두께, 근내지방도, 육색 및 지방색은 셀레늄급 여로 인한 효과가 나타나지 않았다. 또한, 사료 내 셀레늄 수준 및 형태는 육질 및 육량등급 간에 관련성이 형성되지 않았다. 신장, 간장 및 후지 내 셀레늄 함량은 사료 내 셀 레늄 강화수준이 증가함에 따라 유의하게 직선적으로 증가 하였고(p<0.05), 무기셀레늄급여는 대조구와 유의한 차이가 나타나지 않아, 조직 내 셀레늄함량 증가에 도움이 되지 않았다(p>0.05). 이상의 결과에서 셀레늄 강화 청보리 사일 리지 내 존재하는 셀레늄은 조직 내 셀레늄함량을 증가시 키기에 유효한 셀레늄급원인 것으로 나타났고, 셀레늄 강 화 청보리 최고수준(0.9 ppm Se)으로 급여하여 생산된 한 우 후지육 100 g에 함유되어 있는 셀레늄은 성인기준 1일 최소 셀레늄 권장량(40 ㎍)의 약 69%를 충족시키는 것으로 조사되었다.

As continued scaling becomes increasingly difficult, 3D integration has emerged as a viable solution to achieve higher bandwidths and good power efficiency. 3D integration can be defined as a technology involving the stacking of multiple processed wafers containing integrated circuits on top of each other with vertical interconnects between the wafers. This type of 3D structure can improve performance levels, enable the integration of devices with incompatible process flows, and reduce form factors. Through silicon vias (TSVs), which directly connect stacked structures die-to-die, are an enabling technology for future 3D integrated systems. TSVs filled with copper using an electro-plating method are investigated in this study. DC and pulses are used as a current source for the electro-plating process as a means of via filling. A TiN barrier and Ru seed layers are deposited by plasma-enhanced atomic layer deposition (PEALD) with thicknesses of 10 and 30 nm, respectively. All samples electroplated by the DC current showed defects, even with additives. However, the samples electroplated by the pulse current showed defect-free super-filled via structures. The optimized condition for defect-free bottom-up super-filling was established by adjusting the additive concentrations in the basic plating solution of copper sulfate. The optimized concentrations of JGB and SPS were found to be 10 and 20 ppm, respectively.

Insect chitinases (CHTs), which belong to family 18 glycosylhydrolases (GH-18), have been detected in molting fluid and gut tissues and are predicted to mediate the digestion of chitin present in the exoskeleton and peritrophic matrix (PM) in the gut. Based on amino acid sequence similarity and phylogenetic analysis, insect CHT family proteins have been classified into eight groups (group I to VIII). The CHTs belonging to different groups have distinctly different developmental patterns of expression and tissue specificity, suggestive of distinct biological functions. CHT7s belong to Group III chitinase contain two catalytic domains and one chitin binding domain (CBD). The catalytic domain 1 of this group of chitinases exhibits greater sequence similarity to one another than to the catalytic domain 2 in the same protein(s), suggesting distinct functions and/or evolutionary origins for each of these two catalytic domains. This group of chitinases, unlike most insect CHTs, possesses a predicted transmembrane segment at the N-terminal region. The recombinant T. castaneum CHT7 that was expressed in Hi-5 insect cells was bound to the cell membrane. Apparently, the catalytic domains of this CHT face the extracellular space as revealed by its ability to hydrolyze an artificial chitin substrate added to the medium. DsRNA-based functional studies (RNAi) for several CHT genes in Tribolium castaneum indicated that CHTs belong to groups I (TcCHT5) and II (TcCHT10) are critical for molting and turnover of chitin in the old cuticle. In other hand, RNAi for TcCHT7 did not affect any types of molting such as larval-larval, larval-pupal and pupal-adult. The resulting pupae or adults, however, failed to wing-expansion and abdominal contraction. Immunohistochemical analysis revealed that TcCHT7 protein is localized in newly synthesized procuticle, suggesting that TcCHT7 could be released form the plasma membrane of epidermal cells by proteolysis. Chitin seems to accumulate within the assembly zone of the elytral and body wall cuticle in dsTcCHT7-treated animals. Transmission electron microscopy revealed that down-regulation of TcCHT7 transcripts resulted in disorganization of chitin laminar and vertical canals in the procuticle. These results suggest that TcCHT7 may have critical roles in the laminar assembly and synthesis and/or deposition of cuticular chitin. This work was supported by NRF (NRF-2012R1A2A1A01006467).

We report a highly sensitive NO2 gas sensor based on multi-layer graphene (MLG) films synthesized by a chemical vapor deposition method on a microheater-embedded flexible substrate. The MLG could detect low-concentration NO2 even at sub-ppm (<200 ppb) levels. It also exhibited a high resistance change of ~6% when it was exposed to 1 ppm NO2 gas at room temperature for 1 min. The exceptionally high sensitivity could be attributed to the large number of NO2 molecule adsorption sites on the MLG due to its a large surface area and various defect-sites, and to the high mobility of carriers transferred between the MLG films and the adsorbed gas molecules. Although desorption of the NO2 molecules was slow, it could be enhanced by an additional annealing process using an embedded Au microheater. The outstanding mechanical flexibility of the graphene film ensures the stable sensing response of the device under extreme bending stress. Our large-scale and easily reproducible MLG films can provide a proof-of-concept for future flexible NO2 gas sensor devices.

The electrical and optical properties of fluorine-doped tin oxide films grown on polyethylene terephthalate film witha hardness of 3 using electron cyclotron resonance plasma with linear microwave of 2.45GHz of high ionization energy wereinvestigated. Fluorine-doped tin oxide films with a magnetic field of 875 Gauss and the highest resistance uniformity wereobtained. In particular, the magnetic field could be controlled by varying the distribution in electron cyclotron depositionpositions. The films were deposited at various gas flow rates of hydrogen and carrier gas of an organometallic source. Thesurface morphology, electrical resistivity, transmittance, and color in the visible range of the deposited film were examined usingSEM, a four-point probe instrument, and a spectrophotometer. The electromagnetic field for electron cyclotron resonancecondition was uniformly formed in at a position 16cm from the center along the Z-axis. The plasma spatial distribution ofmagnetic current on the roll substrate surface in the film was considerably affected by the electron cyclotron systems. Therelative resistance uniformity of electrical properties was obtained in film prepared with a magnetic field in the current rangeof 180~200A. SEM images showing the surface morphologies of a film deposited on PET with a width of 50cm revealedthat the grains were uniformly distributed with sizes in the range of 2~7nm. In our experimental range, the electrical resistivityof film was able to observe from 1.0×10−2 to 1.0×10−1Ωcm where optical transmittance at 550nm was 87~89%. Theseproperties were depended on the flow rate of the gas, hydrogen and carrier gas of the organometallic source, respectively.

목 적: 중심파장이 656.3nm에서 반치폭이 약 8nm이고 투과율이 92%인 협대역 H-α imaging 필터를 설계·제작하고, 이 필터의 박막 특성을 연구하고자 한다. 방 법: 전자빔 증착기를 이용하여 Ti3O5/SiO2 다층박막으로 656.3nm 대역투과필터와 Hb600 적외선 차단필터를 만든 후, 분광광도계로 투과율과 대역폭을 확인하였다. SEM사진을 이용하여 적외선차단필터 단면을 관찰하였고, XRD 데이터로부터 박막의 구조를 알 수 있었으며, XPS 분석으로부터 박막 성분을 확인하였다. 결 과: 협대역 H- imaging 필터에서 대역투과필터의 최적조건은 30층, 반사방지막 코팅층은 6층, 적외선차단필터는 32층으로 설계·제작되었다. 제작된 H- imaging 필터의 최대파장피크가 이론치에 비교했을 때 약 0.7nm로 공차가 거의 없는 것을 알 수 있었다. XRD 분석으로 대역투과 필터와 반사방지막 코팅층은 비정질로, 적외선 차단 필터는 결정질으로 코팅되는 것을 확인하였다. SEM 사진에 의해 적외선 차단필터의 코팅 층을 확인하였고, XPS 분석에 의해 대역필터의 가장 바깥층이 SiO2층임을 확인할 수 있었다. 결 론: Ti3O5/SiO2 다층박막을 이용하여 30층의 대역투과 필터와 32층의 적외선차단필터를 제작하여 657nm 중심파장에서 8nm 반치폭을 가지며 투과율은 92%인 협대역 H-α imaging 필터를 제작하였으며, 제작된 필터는 설계치와 거의 비슷한 투과율과 반치폭을 가짐을 알 수 있었다.

Al-doped ZnO(AZO) thin films were synthesized using atomid layer deposition(ALD), which acurately controlledthe uniform film thickness of the AZO thin films. To investigate the electrical and optical properites of the AZO thin films,AZO films using ALD was controlled to be three different thicknesses (50nm, 100nm, and 150nm). The structural, chemical,electrical, and optical properties of the AZO thin films were analyzed by X-ray diffraction, X-ray photoelectron spectroscopy,field-emssion scanning electron microscopy, atomic force microscopy, Hall measurement system, and UV-Visspectrophotometry. As the thickness of the AZO thin films increased, the crystallinity of the AZO thin films gradually increased,and the surface morphology of the AZO thin films were transformed from a porous structure to a dense structure. The averagesurface roughnesses of the samples using atomic force microscopy were ~3.01nm, ~2.89nm, and ~2.44nm, respectively. Asthe thickness of the AZO filmsincreased, the surface roughness decreased gradually. These results affect the electrical and opticalproperties of AZO thin films. Therefore, the thickest AZO thin films with 150nm exhibited excellent resistivity (~7.00×10−4Ω·cm), high transmittance (~83.2%), and the best FOM (5.71×10−3Ω−1). AZO thin films fabricated using ALD may be usedas a promising cadidate of TCO materials for optoelectronic applications.

Atomic layer deposition(ALD) is a promising deposition method and has been studied and used in many different areas, such as displays, semiconductors, batteries, and solar cells. This method, which is based on a self-limiting growth mechanism, facilitates precise control of film thickness at an atomic level and enables deposition on large and three dimensionally complex surfaces. For instance, ALD technology is very useful for 3D and high aspect ratio structures such as dynamic random access memory(DRAM) and other non-volatile memories(NVMs). In addition, a variety of materials can be deposited using ALD, oxides, nitrides, sulfides, metals, and so on. In conventional ALD, the source and reactant are pulsed into the reaction chamber alternately, one at a time, separated by purging or evacuation periods. Thermal ALD and metal organic ALD are also used, but these have their own advantages and disadvantages. Furthermore, plasma-enhanced ALD has come into the spotlight because it has more freedom in processing conditions; it uses highly reactive radicals and ions and for a wider range of material properties than the conventional thermal ALD, which uses H2O and O3 as an oxygen reactant. However, the throughput is still a challenge for a current time divided ALD system. Therefore, a new concept of ALD, fast ALD or spatial ALD, which separate half-reactions spatially, has been extensively under development. In this paper, we reviewed these various kinds of ALD equipment, possible materials using ALD, and recent ALD research applications mainly focused on materials required in microelectronics.

ZIF 재료는 독특한 기체 분리 특성을 포함한 물리적, 화학적 특성 때문에 큰 관심을 받아왔다. 본 연구에서는 α-alumina 지지체 위에 결함 없고 연속적인 ZIF-7 막을 형성하는 새롭고 효율적인 방법이 연구되었다. 지지체 위에 시딩 (seeding)을 하지 않고 직접 ZIF-7 박막을 합성하는데 정전분무법이 처음으로 적용되었다. 이 방법은 전구체 용액을 직접 정 전분무함으로 α-alumina 지지체에 ZIF-7 박막을 형성할 수 있었다. ZIF-7 박막은 XRD, FE-SEM, 단일 기체 투과 장치 등을 이용해 분석하였다.

We investigated the effects of parametric synthesis conditions of catalysts such as sintering temperature, sorts of supports and compositions of catalysts on alignment and length-control of carbon nanotubes (CNTs) using catalyst powders. To obtain aligned CNTs, several parameters were changed such as amount of citric acid, calcination temperature of catalysts, and the sorts of supports using the combustion method as well as to prepare catalyst. CNTs with different lengths were synthesized as portions of molybdenum and iron using a chemical vapor deposition reactor. In this work, the mechanisms of alignment of CNTs and of the length-control of CNTs are discussed.

The effect of a sputter deposition sequence of Cu, Zn, and Sn metal layers on the properties of Cu2ZnSnS4 (CZTS) was systematically studied for solar cell applications. The set of Cu/Sn/Zn/Cu multi metal films was deposited on a Mo/SiO2/Si wafer using dc sputtering. CZTS films were prepared through a sulfurization process of the Cu/Sn/Zn/Cu metal layers at 500˚C in a H2S gas environment. H2S (0.1%) gas of 200 standard cubic centimeters per minute was supplied in the cold-wall sulfurization reactor. The metal film prepared by one-cycle deposition of Cu(360 nm)/Sn(400 nm)/Zn(400 nm)/Cu(440 nm) had a relatively rough surface due to a well-developed columnar structure growth. A dense and smooth metal surface was achieved for two- or three-cycle deposition of Cu/Sn/Zn/Cu, in which each metal layer thickness was decreased to 200 nm. Moreover, the three-cycle deposition sample showed the best CZTS kesterite structures after 5 hr sulfurization treatment. The two- and three-cycle Cu/Sn/Zn/Cu samples showed high-efficient photoluminescence (PL) spectra after a 3 hr sulfurization treatment, wheres the one-cycle sample yielded poor PL efficiency. The PL spectra of the three-cycle sample showed a broad peak in the range of 700-1000 nm, peaked at 870 nm (1.425 eV). This result is in good agreement with the reported bandgap energy of CZTS.