In this work, Ag3PO4/In2S3 nanocomposites with low loading of In2S3 (5-15 wt %) are fabricated by two step chemical precipitation approach. The microstructure, composition and improved photoelectrochemical properties of the asprepared composites are studied by X-ray diffraction pattern (XRD), field emission scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), photocurrent density, EIS and amperometric i-t curve analysis. It is found that most of In2S3 nanoparticles are deposited on the surfaces of Ag3PO4. The as-prepared Ag3PO4/ In2S3 composite (10 wt%) is selected and investigated by SEM and TEM, which exhibits special morphology consisting of lager size substrate (Ag3PO4), particles and some nanosheets (In2S3). The introduction of In2S3 is effective at improving the charge separation and transfer efficiency of Ag3PO4/In2S3, resulting in an enhancement of photoelectric behavior. The origin of the enhanced photoelectrochemical activity of the In2S3-modified Ag3PO4 may be due to the improved charge separation, photocurrent stability and oriented electrons transport pathways in environment and energy applications.

In this study, chemical bath deposited (CBD) indium sulfide buffer layers were investigated as a possible substitution for the cadmium sulfide buffer layer in CIGS thin film solar cells. The performance of the In2S3/CIGS solar cell dramatically improved when the films were annealed at 300˚C in inert gas after the buffer layer was grown on the CIGS film. The thickness of the indium sulfide buffer layer was 80 nm, but decreased to 60 nm after annealing. From the X-ray photoelectron spectroscopy it was found that the chemical composition of the layer changed to indium oxide and indium sulfide from the as-deposited indium hydroxide and sulfate states. Furthermore, the overall atomic concentration of the oxygen in the buffer layer decreased because deoxidation occurred during annealing. In addition, an In-thin layer was inserted between the indium sulfide buffer and CIGS in order to modify the In2S3/CIGS interface. The In2S3/CIGS solar cell with the In interlayer showed improved photovoltaic properties in the Jsc and FF values. Furthermore, the In2S3/CIGS solar cells showed higher quantum efficiency in the short wavelength region. However, the quantum efficiency in the long wavelength region was still poor due to the thick buffer layer.