The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An SiO2 diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and<100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.

Thermoelectric-thick films were fabricated by using a screen printing process of n and p-type bismuth-telluride-based pastes. The screen-printed thick films have approximately 30 in thickness and show rough surfaces yielding an empty gap between an electrode and the thick film. The gap might result in an increase of an electrical resistivity of the fabricated thick-film-type thermoelectric module. In this study, we suggest a conductive metal coating onto the surfaces of the screen-printed paste in order to reduce the contact resistance in the module. As a result, the electrical resistivity of the thermoelectric module having a gold coating layer was significantly reduced up to 30% compared to that of a module without any metal coating. This result indicates that an introduction of conductive metal layers is effective to decrease the contact resistivity of a thick-film-typed thermoelectric module processed by screen printing.

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a CuInSe2 and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the Ga2Se3 layer. The Ga2Se3 layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous Ga2Se3 layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of Ga2Se3 layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the Ga2Se3 thickness was 220 nm, suggesting that the Ga2Se3 layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

In this study, we fabricated a polymer light emitting diode (PLED) and investigated its electrical and optical characteristics in order to examine the effects of the PFO [poly(9,9-dioctylfluorene-2-7-diyl) end capped with N,N-bis(4-methylphenyl)-4-aniline] concentrations in the emission layer (EML). The PFO polymer was dissolved in toluene ranging from 0.2 to 1.2 wt%, and then spin-coated. To verify the influence of the TPBI [2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)]electron transport layer, TPBI small molecules were deposited by thermal evaporation. The current density, luminance, wavelength and current efficiency characteristics of the prepared PLED devices with and without TPBI layer at various PFO concentrations were measured and compared. The luminance and current efficiency of the PLED devices without TPBI layer were increased, from 117 to 553 cd/m2 and from 0.015 to 0.110 cd/A, as the PFO concentration increased from 0.2 to 1.0 wt%. For the PLED devices with TPBI layer, the luminance and current efficiency were 1724 cd/m2 and 0.501 cd/A at 1.0 wt% PFO concentration. The CIE color coordinators of the PLED device with TPBI layer at 1.0 wt% PFO concentration showed a more pure blue color compared with the one without TPBI, and the CIE values varied from (x, y) = (0.21, 0.23) to (x, y) = (0.16, 0.11).

The effect of light scattering layers (400 nm, TiO particle) of 4 m thickness on the dye-sensitized solar cell has been investigated with a 12 m thickness of photo-anode (20 nm, TiO particle). Two different structures of scattering layers (separated and back) were applied to investigate the light transmitting behaviors and solar cell properties. The light transmittance and cell efficiency significantly improved with inserting scattering layers. The back scattering layer structure had more effective transmitting behavior, but separated scattering layer (center: 2 m, back: 2 m) structure (9.83% of efficiency) showing higher efficiency (0.6%), short circuit current density (0.26 mA/cm) and fill factor (0.02). The inserting separating two scattering layers improved the light harvesting, and relatively thin back scattering layer (2 m of thickness) minimized interruption of ion diffusion in liquid electrolyte.

Micro-scale copper bumps for build-up PCB were electroplated using a pulse-reverse method. The effects of the current density, pulse-reverse ratio and brightener concentration of the electroplating process were investigated and optimized for suitable performance. The electroplated micro-bumps were characterized using various analytical tools, including an optical microscope, a scanning electron microscope and an atomic force microscope. Surface analysis results showed that the electroplating uniformity was viable in a current density range of 1.4-3.0 A/dm2 at a pulse-reverse ratio of 1. To investigate the brightener concentration on the electroplating properties, the current density value was fixed at 3.0 A/dm2 as a dense microstructure was achieved at this current density. The brightener concentration was varied from 0.05 to 0.3 ml/L to study the effect of the concentration. The optimum concentration for micro-bump electroplating was found to be 0.05 ml/L based on the examination of the electroplating properties of the bump shape, roughness and grain size.

TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about 1.8μm, which was formed for 200 minutes at 300˚. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.

The objective of the present study is to investigate the increase in the functional characteristics of a substrate by the formation of a thin coating layer. Thin coating layers of have high potential because exhibits high hardness. Shock induced reaction synthesis is an attractive fabrication technique to synthesize uniform coating layer by controlling the shock wave. Ti and Si powders to form using shock induced reaction synthesis, were mixed using high-energy ball mill into small scale. The positive effect of this technique is highly functional coating layer on the substrate due to ultra fine substructure, which improves the bonding strength. These materials are in great demand as heat resisting, structural and corrosion resistant materials. Thin coating layer was successfully recovered and showed high Vickers' hardness (Hv=1183). Characterization studies on microstructure revealed a fairly uniform distribution of powders with good interfacial integrity between the powders and the substrate.

방향족 폴리아미드 역삼투 복합 박막에 트리알콕시알킬 실란 화합물을 안정적으로 정착시켜 내염소성이 향상된 복합막을 제조하는 방법에 관하여 조사하였다. 실란 화합물의 알킬 그룹의 탄소가 1개인 methyltriethoxysilane (METES)와 8개인 octyltriethoxysilane (OCTES) 표면 개질에 사용하였다. 긴 알킬 체인을 갖는 실란(OCTES)이 정착된 멤브레인의 경우, 일반 폴리아미드 역삼투막 또는 짧은 알킬 체인을 갖는 실란(METES)에 비해 개염소성이 크게 향상됨을 알 수 있었다. 본 연구에서는 표면 분석을 통하여 OCTES 코팅막과 METES또는 상용막과의 내염소성 차이를 설명하고자 하였다. EDX 원소 분석을 통하여 실란 화합물 둘 다 폴리아미드상에 안정적으로 고정되었음을 볼 수 있었으나 표면 조도나 접촉각 분석에서는 긴 알킬 체인을 가진 OCTES가 혐수성에 큰 영향을 주고 있음을 확인할 수 있었다.

중저준위 방사성폐기물 천층처분시설의 처분덮개설계 및 성능평가를 위해 국내 역사시대 고분연구를 수행하였다. 처분덮개 성능과 관련된 국내외 연구현황을 조사하고 삼국시대 고분을 중심으로 봉분의 층상특성을 정리하였다. 국내 고분에 대한 봉토의 시료채취와 시료에 대한 수리전도도 측정 및 분석을 실시하였다. 고분에 대한 자연유사 연구에서 발굴조사보고서 상에 제시된 봉토의 유사판축기법의 적용, 모세관 방벽현상과 배수로를 이용한 봉분 내 습도조절 여부를 천층처분 시설설계에 활용할 수 있을 것으로 판단된다. 향후 국내 고분발굴현장이 있을 때 현장을 방문하여 필요한 자료수집과 더불어 원자력분야의 관심사와 필요사항에 대하여 국내 고고학계와의 정보교환이 이루어져야 할 것으로 판단된다.