In this study, a method to remove residual powder on a multi-layered graphene and a new approach to transfer multi-layered graphene at once are studied. A graphene one-step transfer (GOST) method is conducted to minimize the residual powder comparison with a layer-by-layer transfer. Furthermore, a residual powder removing process is investigated to remove residual powder at the top of a multi-layered graphene. After residual powder is removed, the sheet resistance of graphene is decreased from 393 to 340 Ohm/sq in a four-layered graphene. In addition, transmittance slightly increases after residual powder is removed from the top of the multi-layered graphene. Optical and atomic-force microscopy images are used to analyze the graphene surface, and the Ra value is reduced from 5.2 to 3.7 nm following residual powder removal. Therefore, GOST and residual powder removal resolve the limited application of graphene electrodes due to residual powder.

A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), (CH3)2Si(OCH3)2, and CxHyOz by plasma enhanced chemical vapor deposition (PECVD) is presented. The multistep process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gapfilling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.