표면 플라즈마 처리된 Cu nanoparticle (NPs)로 제작된 Organic photovoltaic (OPV)소자는 일잔 OPV 소자보 다 높은 효율성을 보여준다. Nps는 다양한 합성법으로 제조되어 29 nm의 지름을 가진 입자형태를 갖추었다. 이러한 Nps는 P3HT:PCBM과 결합하여 OPV 활성층으로 사용되었는데 적층방법으로 spin과 bar 코팅 방식을 사용하였다. 제작된 소자의 효율 평가에서 스핀코팅으로 제작된 P3HT:PCBM과 Nps가 결합된 P3HT:PCBM 이 각각 1.01과 4.39%로 Np의 효과로 인한 효율 증가를 볼 수 있었다. 바코팅 프로세스를 (8, 20, 50 um 갭)를 사용하였을 경우 20 um 갭의 바코터에서 스핀코터와 같은 두께의 활성층 두께를 보였다. 제작된 활성층은 바코터 그루브 특성으로 인해 트렌치 패턴이 형성되어 빛 흡수를 약화시켜 효율성을 저하시켰다.

We demonstrated a CNT synaptic transistor by integrating 6,6-phenyl-C61 butyric acid methyl ester(PCBM) molecules as charge storage molecules in a polyimide(PI) dielectric layer with carbon nanotubes(CNTs) for the transistor channel. Specifically, we fabricated and compared three different kinds of CNT-based synaptic transistors: a control device with Al2O3/PI, a single PCBM device with Al2O3/PI:PCBM(0.1 wt%), and a double PCBM device with Al2O3/PI:PCBM(0.1 wt%)/PI:PCBM(0.05 wt%). Statistically, essential device parameters such as Off and On currents, On/Off ratio, device yield, and longterm retention stability for the three kinds of transistor devices were extracted and compared. Notably, the double PCBM device exhibited the most excellent memory transistor behavior. Pulse response properties with postsynaptic dynamic current were also evaluated. Among all of the testing devices, double PCBM device consumed such low power for stand-by and its peak current ratio was so large that the postsynaptic current was also reliably and repeatedly generated. Postsynaptic hole currents through the CNT channel can be generated by electrons trapped in the PCBM molecules and last for a relatively short time(~ hundreds of msec). Under one certain testing configuration, the electrons trapped in the PCBM can also be preserved in a nonvolatile manner for a long-term period. Its integrated platform with extremely low stand-by power should pave a promising road toward next-generation neuromorphic systems, which would emulate the brain power of 20W.

In this study, we prepare polymer solar cells incorporating organic ligand-modified Ag nanoparticles (O-AgNPs) highly dispersed in the P3HT:PCBM layer. Ag nanoparticles decorated with water-dispersible ligands (W-AgNPs) were also utilized as a control sample. The existence of the ligands on the Ag surface was confirmed by FT-IR spectra. Metal nanoparticles with different surface chemistries exhibited different dispersion tendencies. O-AgNPswere highly dispersed even at high concentrations, whereas W-AgNPs exhibited significant aggregation in the polymerlayer. Both dispersion and blending concentration of the Ag nanoparticles in P3HT:PCBM matrix had critical effects onthe device performance as well as light absorption. The significant changes in short-circuit current density (JSC) of thesolar cells seemed to be related to the change in the polymer morphology according to the concentration of AgNPsintroduced. These findings suggested the importance of uniform dispersion of plasmonic metal nanoparticles and theirblending concentration conditions in order to boost the solar cell performance.

유기 박막 트랜지스터 (organic thin-film transistors; OTFTs)는 유기 반도체 그리고 디스플레이와 같은 분야에 그들의 잠재적인 응용 가능성 때문에 많은 주목을 받고 있다. 하지만 급격한 산화 혹은 낮은 전기 이동도와 같은 단점으로 인하여 n-형 물질은 p-형 물질에 비해서 상대적으로 많은 연구가 진행되지 못한 실정이다. 따라서 본 논문에서는 n-형 반도체 물질인 [6,6]-phenyl-C61-butyricacidmethylester (PCBM)과 Poly(4-vinylphenol) (PVP)을 유기 절연막으로 이용하여 o-dichlorobenzene, toluene and chloroform과 같은 다양한 유기 용매를 사용한 플라스틱 기판에 유기트랜지스터를 제작하였고 유기 용매가 ODCB 경우 전계 효과 이동도는 약 0.034 cm2/Vs 그리고 점멸비(on/off ratio)는 ~1.3×105 으로 향상 되었다. 다양한 유기 용매의 휘발성에 따라서 PCBM TFT의 전기적 특성에 미치는 영향을 규명하였다.