스크린 인쇄공법을 이용하여 구형 실리콘 태양전지용 전면 전극을 제작하였고 그 물성을 검토하였다.집광형 구형 실리콘 태양전지는 종래의 결정질 실리콘 태양전지 발전 시스템 설치비용 중 21%를 차지하는 실리콘 소재의 사용량을 줄이기 위해 볼 형태의 구형 실리콘을 사용하였고, 입사되는 태양광을 최대한 활용하기위해 알루미늄으로 된 집광판을 사용하는 것을 특징으로 한다. 전도성 필러로써 Flake 형태의 Ag 파우더를 사용하였고, 기재와의 접착력을 부여하기 위한 유기 바인더로서 에폭시수지, 폴리에스테르수지,아크릴수지 등을 비교 검토한 결과, 에폭시수지 고형분 12%를 첨가한 paste가 기재와의 접착성, 태양전지 광전변환효율, 내구성에서 가장 우수함을 알 수 있었다.

Transparent ceramics are used in new technology because of their excellent mechanical properties over glasses. Transparent ceramics are nowadays widely used in armor, laser windows, and in high temperature applications. Silicon nitride ceramics have excellent mechanical properties and if transparent silicon nitride is fabricated, it can be widely used. h-BN has a lubricating property and is ductile. Therefore, adding h-BN to silicon nitride ceramics gives a lubricating property and is also machinable. Translucent silicon nitride was fabricated by hot-press sintering (HPS) and 57% transmittance was observed in the near infrared region. A higher wt. % of h-BN in silicon nitride ceramics does not favor transparency. The optical, mechanical, and tribological properties of BN dispersed polycrystalline Si3N4 ceramics were affected by the density, α:β-phase ratio, and content of h-BN in sintered ceramics. The hot pressed samples were prepared from the mixture of α-Si3N4, AlN, MgO, and h-BN at 1850˚C. The composite contained from 0.25 to 2 wt. % BN powder with sintering aids (9% AlN + 3% MgO). A maximum transmittance of 57% was achieved for the 0.25 wt. % BN doped Si3N4 ceramics. Fracture toughness increased and wear volume and the friction coefficient decreased with an increase in BN content. The properties such as transmittance, density, hardness, and flexural strength decreased with an increase in content of h-BN in silicon nitride ceramics.

This study shows the effects of deionized (DI) rinse and oxide HF wet etch processes on silicon substrate during a photolithography process. We found a fail at the wafer center after DI rinse step, called Si pits, during the fabrication of a complementary metal-oxide-semiconductor (CMOS) device. We tried to find out the mechanism of the Si pits by using the silicon wafer on CMOS fabrication and analyzing the effects of the friction charge induced by the DI rinsing. The key parameters of this experiment were revolution per minute (rpm) and time. An incubation time of above 10 sec was observed for the formation of Si pits and the rinsing time was more effective than rpm on the formation of the Si pits. The formation mechanism of the Si pits and optimized rinsing process parameters were investigated by measuring the charging level using a plasma density monitor. The DI rinse could affect the oxide substrate by a friction charging phenomenon on the photolithography process. Si pits were found to be formed on the micro structural defective site on the Si substrate under acceleration by developed and accumulated charges during DI rinsing. The optimum process conditions of DI rinse time and rpm could be established through a systematic study of various rinsing conditions.

본 연구에서는 텐셀 자카드 직물에 은행나무 추출물(ginkgo biloba extract)과 실리콘 유연제(silicon softener)를 처리 할 때 실리콘유연제를 동시에 처리하는 방법과 은행나무추출액 처리하고 난 후에 다른 bath에서 실리콘유연제를 연속적으로 처리하는 방법 중 어느 것이 더 촉감이나 선호도에 더 영향을 주는지를 찾아내고자 하였다. 따라서 텐셀 자카드 직물에 은행나무추출액과 실리콘유연제를 처리하여 KES-FB system을 통하여 역학적 특성 및 객관적 태의 변화를 살펴보고, 침장용 직물이 가지는 개별 감각 및 종합 감각의 주관적 감성을 평가하였다. 이밖에도 침장용 직물에서 중요하게 여겨지는 소비자의 개별감각 요소를 평가하여 침장용 직물개발의 기초자료를 마련하고자 하였다. 텐셀 자카드 직물에 은행나무추출액과 실리콘유연제를 처리하게 되면 인장특성인 EM, WT, RT는 증가하여 신축성이 있고 형태안정성이 좋아지며, 인장특성 전단특성이 감소하여 유연성이 증가하고, 무게와 두께가 증가로 부피감이 커져, THV는 증가하였다. 주관적 감성 평가 결과 개별감각 중 부드러움, 따뜻함, 탄력감, 부피감은 증가하고 거침은 감소하는 것으로 평가하였다. 또한 부드러움, 부피감, 따듯함을 침장용 직물이 갖는 중요한 개별감각 요소로 평가하였다. 은행나무추출액과 실리콘유연제를 처리할 경우 촉감이 좋아지고 선호도가 높아지는 것으로 평가되었다.

주사슬에 실리콘을 포함하는 단량체를 단계별로 합성을 하였고, 합성된 단량체와 테트라아민기를 갖는3,3-diaminobenzidine과의 축합중합 방법을 통하여 두 가지 새로운 중합체 PBI 1, PBI 2를 합성하였다.합성된 중합체들의 구조분석은 IR, 1H-NMR 측정을 통해서 확인하였고, 분자량 분포를 알아보기위해서GPC를 측정한 결과 다분산지수가 1.55로 측정 되었다. PBI의 물리적, 열적 특성을 알아보기 위해서 용해도 조사, 점도 측정 그리고 TGA 측정을 하였다. 그 결과 중합체가 DMAc, DMSO, NMP, DMF 등의 극성 유기용매에 잘 용해되었으며, 열안정성은 초기분해온도가 368℃이고, 800℃에서 잔존질량이 57%로 열적 안정성이 우수한 고분자임을 확인하였다.

In this research, the optimal manufacturing conditions of fine Si powders from Si scrap were investigated as a function of different initial powder size using the high-energy ball milling equipment, which produces the fine powder by means of an ultra high-energy within a short duration. The morphological change of the powders according to the milling time was observed by Scanning electron microscopy (SEM). With the increasing milling time, the size of Si powder was decreased. In addition, more energy and stress for milling were required with the decreasing initial powder size. The refinement of Si scrap was rapidly carried out at 10min ball milling time. However, the refined powder started to agglomerate at 30 min milling time, while the powder size became uniform at 60 min milling time.

This paper investigates the dependence of a-Si:H/c-Si passivation and heterojunction solar cell performances on various cleaning processes of silicon wafers. It is observed that the passivation quality of a-Si:H thin-films on c-Si wafers depends highly on the initial H-termination properties of the wafer surface. The effective minority carrier lifetime (MCLT) of highly H-terminated wafer is beneficial for obtaining high quality passivation of a-Si:H/c-Si. The wafers passivated by p(n)-doped a-Si:H layers have low MCLT regardless of the initial H-termination quality. On the other hand, the MCLT of wafers incorporating intrinsic (i) a-Si:H as a passivation layer shows sensitive variation with initial cleaning and H-termination schemes. By applying the improved cleaning processes, we can obtain an MCLT of 100μsec after H-termination and above 600μsec after i a-Si:H thin film deposition. By adapting improved cleaning processes and by improving passivation and doped layers, we can fabricate a-Si:H/c-Si heterojunction solar cells with an active area conversion efficiency of 18.42%, which cells have an open circuit voltage of 0.670V, short circuit current of 37.31 mA/cm2 and fill factor of 0.7374. These cells show more than 20% pseudo efficiency measured by Suns-Voc with an elimination of series resistance.

In this study, we analyzed the effect of silicon oxynitride matrix on the optical properties of Au nanoparticles dispersed on composite film and explored the effectiveness of the silicon in fine tuning the refractive index of the composite film for applications in optical waveguide devices. The atomic fraction of nitrogen in SiOxNy films was controlled by varying the relative flow ratio of nitrogen gas in reactive sputtering and was evaluated optically using an effective medium theory with Bruggeman geometry consisting of a random mixture between SiO2 and Si3N4. The Au nanoparticles were embedded in the SiOxNy matrix by employing the alternating deposition technique and clearly showed an absorption peak due to the excitation of surface plasmon. With increasing nitrogen atomic fraction in the matrix, the surface plasmon resonance wavelength shifted to a longer wavelength (a red-shift) with an enhanced resonance absorption. These characteristics were interpreted using the Maxwell-Garnett effective medium theory. The formation of a guided mode in a slab waveguide consisting of 3 μm thick Au:SiOxNy nanocomposite film was confirmed at the telecommunication wavelength of 1550 nm by prism coupler method and compared with the case of using SiO2 matrix. The use of SiOxNy matrix provides an effective way of controlling the mode confinement while maintaining or even enhancing the surface plasmon resonance properties.

Si-C composite with hollow spherical structure was synthesized using ultrasonic treatment of organosilica powder formed by hydrolysis of phenyltrimethoxysilane. The prepared powder was pyrolyzed at various temperatures ranging from 900 to 1300 ˚C under nitrogen atmosphere to obtain optimum conditions for Li-ion battery anode materials with high capacity and cyclability. The XRD and elemental analysis results show that the pyrolyzed Si/C composite at 1100 ˚C has low oxygen and nitrogen levels, which is desirable for increasing the electrochemical capacity and reducing the irreversible capacity of the first discharge. The solid Si-C composite electrode shows a first charge capacity of ~500 mAhg-1 and a capacity fade within 30 cycles of 0.93% per cycle. On the other hand, the electrochemical performance of the hollow Si-C composite electrode exhibits a reversible charge capacity of ~540 mAhg-1 with an excellent capacity retention of capacity loss 0.43% per cycle up to 30 cycles. The improved electrochemical properties are attributed to facile diffusion of Li ions into the hollow shell with nanoscale thickness. In addition, the empty core space provides a buffer zone to relieve the mechanical stresses incurred during Li insertion.

Changes in the surface morphology and light scattering of textured Al doped ZnO thin films on glasssubstrates prepared by rf magnetron sputtering were investigated. As-deposited ZnO:Al films show a hightransmittance of above 80% in the visible range and a low electrical resistivity of 4.5×10-4Ω·cm. The surfacemorphology of textured ZnO:Al films are closely dependent on the deposition parameters of heater temperature,working pressure, and etching time in the etching process. The optimized surface morphology with a cratershape is obtained at a heater temperature of 350oC, working pressure of 0.5 mtorr, and etching time of 45seconds. The optical properties of light transmittance, haze, and angular distribution function (ADF) aresignificantly affected by the resulting surface morphologies of textured films. The film surfaces, havinguniformly size-distributed craters, represent good light scattering properties of high haze and ADF values.Compared with commercial Asahi U (SnO2:F) substrates, the suitability of textured ZnO:Al films as frontelectrode material for amorphous silicon thin film solar cells is also estimated with respect to electrical andoptical properties.

The influence of various surface morphologies on the mechanical strength of silicon substrates was investigated in this study. The yield for the solar cell industry is mainly related to the fracturing of silicon wafers during the manufacturing process. The flexural strengths of silicon substrates were influenced by the density of the pyramids as well as by the size and the rounded surface of the pyramids. To characterize and optimize the relevant texturing process in terms of mechanical stability and the fabrication yield, the mechanical properties of textured silicon substrates were investigated to optimize the size and morphology of random pyramids. Several types of silicon substrates were studied, including the planar type, a textured surface with large and small pyramids, and a textured surface with rounded pyramids. The surface morphology and a cross-section of the as-textured and fractured silicon substrates were investigated by scanning electron microscopy.

The simulation program for solar cells, PC1D, was briefly reviewed and the device modeling of a multicrystalline Si solar cell using the program was carried out to understand the internal operating principles. The effects of design parameters on the light absorption and the quantum efficiency were investigated and strategies to reduce carrier recombination, such as back surface field and surface passivation, were also characterized with the numerical simulation. In every step of the process, efficiency improvements for the key performance characteristics of the model device were determined and compared with the properties of the solar cell, whose efficiency (20.3%) has been confirmed as the highest in multicrystalline Si devices. In this simulation work, it was found that the conversion efficiency of the prototype model (13.6%) can be increased up to 20.7% after the optimization of design parameters.

Electrical properties of multi-channel metal-induced unilaterally precrystallized polycrystalline silicon thin-film transistor (MIUP poly-Si TFT) devices and circuits were investigated. Although their structure was integrated into small area, reducing annealing process time for fuller crystallization than that of conventional crystal filtered MIUP poly-Si TFTs, the multi-channel MIUP poly-Si TFTs showed the effect of crystal filtering. The multi-channel MIUP poly-Si TFTs showed a higher carrier mobility of more than 1.5 times that of the conventional MIUP poly-Si TFTs. Moreover, PMOS inverters consisting of the multi-channel MIUP poly-Si TFTs showed high dynamic performance compared with inverters consisting of the conventional MIUP poly-Si TFTs.

The restrictor, which is a fluid channel from a reservoir to a chamber inside a thermal micro actuator, has been fabricated using ArF and KrF excimer lasers, Diode-Pumped Solid State Lasers (DPSSL) and femtosecond lasers for a feasibility study. A numerical model of fluid dynamics for the actuator chamber and restrictor is presented. The model includes bubble formation and growth, droplet ejection through nozzle, and dynamics of fluid refill through the restrictor from a reservoir. Since an optimized and well-fabricated restrictor is important for a high frequency actuator, some special beam delivery setups and post processing techniques have been researched and developed. The effects of variations of the restrictor length, diameter, and tapered shapes are simulated and the results are analyzed to determine the optimal design. The numerical results of droplet velocity and volume are compared with the experimental results of a cylindrical-shaped actuator. It is found that the micro actuators having tapered restrictors show better high frequency characteristics than those having a cylindrical shape without any notable decrease of droplet volume. The laser-fabricated restrictors demonstrate initial feasibility for the laser direct ablation technique although more development is required.

Carbon/silicon composites were synthesized by mixing silicon powders with petroleum pitch and subsequent heat-treatment. The resultant composites were composed of carbon and nano-size crystalline silicon identified by XRD and EDX. FIB images and SEM images were taken respectively to detect the existence of silicon impregnated in carbon and the distribution of silicon on the carbon surface. The obtained carbon/silicon materials were assembled as half cell anodes for lithium ion secondary battery and their electrochemical properties were tested. The pitch/silicon composite (3 : 1 wt. ratio) heat treated at 1000℃ and mixed with 55.5 wt.% of graphite showed relatively good electrochemical properties such as the initial efficiency of 78%, the initial discharge capacity of 605 mAh/g, and the discharge capacity of 500 mAh/g after 20 cycles.

The application of Carbon and graphite based materials in unprotected environment is limited to a temperature of 450℃ or so because of their susceptibility to oxidation at this temperature and higher. To over come these obstacles a low cost chemical vapour reaction process (CVR) was developed to give crystalline and high purity SiC coating on graphite and isotropic C/C composite. CVR is most effective carbothermal reduction method for conversation of a few micron of carbon layer to SiC. In the CVR method, a sic conversation layer is formed by reaction between carbon and gaseous reagent silicon monoxide at high temperature. Characterization of SiC coating was carried out using SEM. The other properties studied were hardness density and conversion efficiency.

딸기의 백납과를 유발하는 것으로 추정되는 몇 가지 요인 중에서 규소가 백납과의 발생에 미치는 영향을 검토하였다. 배양액 내에 규소를 첨가하면 약 1개월 후부터 백납과가 발생하였는데 potassium silicate (K2SiO4) 200mL·L-1 처리에서는 최고 90%이상의 백납과 발생율을 나타내었다. 배양액에 규소를 제거하면 약 7~8주 후에 백납과의 발생이 중단되었으나 potassium silicate(K2SiO4)의 200mL·L-1 처리에서 가장 늦게까지 발생이 지속되었다. 과실의 길이는 대조구에 비해 규소 처리구에서 약간 길었으며, 과경과 과중은 고농도의 규소 처리구에서 감소하는 경향을 나타내었다. 과실내의 가용성 고형물과 과실수, 주당 수확량은 처리 간에 차이가 없었다. 백납과의 발생비율은 규소의 농도가 높을수록 현저하게 증가하였다. 본 실험의 결과에서 왕겨배지를 사용하는 수경재배의 백납과 발생은 왕겨에서 유출된 규소의 영향인 것으로 밝혀졌다. 이 결과는 수경재배농가의 백납과 발생 방지에 유효한 정보로 이용될 수 있을 것이다.

Eventhough Fe-6.5 wt.% Si alloy shows excellent magnetic properties, magnetic components made of the alloy are not totally because of its extremely low ductility. In order to overcome this demerit of alloy, 6.7 wt.% Si alloy powders were produced by gas atomization and then post-processed to form magnetic cores. By doing so, the total core loss could be minimized by reducing both hysteresis and eddy current loss. From our experiments, we were able to achive a core loss of at 0.1 T and 50 kHz through proper processes and a permeability of 68 at low frequency.

Silicon nitride - silicon carbide composite was developed by using an abrasive SiC powders as a raw material. The composites were prepared by mixing abrasive SiC powder with silicon, pressing and sintering at under nitrogen atmosphere in atmosphere controlled vacuum furnace. The proportion of silicon in the initial mixtures varied from 20 to 50 wt%. After sintering, crystalline phases and microstructure were characterized. All composites consisted of and as the bonding phases in SiC matrix. Their physical and mechanical properties were also determined. It was found that the density of the obtained composites increased with an increase in the content formed in the reaction.