In this study, quantum dot-sensitized solar cells (QDSSC) using CdSe/ZnS quantum dots (QD) of various sizes with green, yellow, and red colors are developed. Quantum dots, depending their different sizes, have advantages of absorbing light of various wavelengths. This absorption of light of various wavelengths increases the photocurrent production of solar cells. The absorption and emission peaks and excellent photochemical properties of the synthesized quantum dots are confirmed through UV-visible and photoluminescence (PL) analysis. In TEM analysis, the average sizes of individual green, yellow, and red quantum dots are shown to be 5 nm, 6 nm, and 8 nm. The J-V curves of QDSSC for one type of QD show a current density of 1.7 mA/cm2 and an open-circuit voltage of 0.49 V, while QDSSC using three type of QDs shows improved electrical characteristics of 5.52 mA/cm2 and 0.52 V. As a result, the photoelectric conversion efficiency of QDSSC using one type of QD is as low as 0.53 %, but QDSSC using three type of QDs has a measured efficiency of 1.4 %.

The photovoltaic properties of perovskite solar cells (PSCs) with a carbon electrode fabricated using different annealing processes are investigated. Perovskite formation (50 oC, 60 min) using a hot-plate and an oven is carried out on cells with a glass/fluorine doped TiO2/TiO2/ZrO2/carbon structure, and the photovoltaic properties of the PSCs are analyzed using a solar simulator. The microstructures of the PSCs are characterized using an optical microscope, a field emission scanning electron microscope, and an electron probe micro-analyzer (EPMA). Photovoltaic analysis shows that the energy conversion efficiency of the samples fabricated using the hot-plate and the oven processes are 2.08% and 6.90%, respectively. Based on the microstructure of the samples and the results of the EPMA, perovskite is formed locally on the carbon electrode surface as the γ-butyrolactone (GBL) solvent evaporates and moves to the top of the carbon electrode due to heat from the bottom of the sample during the hot plate process. When the oven process is used, perovskite forms evenly inside the carbon electrode, as the GBL solvent evaporates extremely slowly because heat is supplied from all directions. The importance of the even formation of perovskite inside the carbon electrode is emphasized, and the feasibility of oven annealing is confirmed for PSCs with carbon electrodes.

In this paper, we investigated the effect of the passivation stack with Al2O3, hydrogenated silicon nitride (SiNx:H) stack and Al2O3, silicon oxynitride (SiONx) stack in the n type bifacial solar cell on monocrystalline silicon. SiNx:H and SiONx films were deposited by plasma enhanced chemical vapor deposition on the Al2O3 thin film deposited by thermal atomic layer deposition. We focus on passivation properties of the two stack structure after laser ablation process in order to improve bifaciality of the cell. Our results showed SiNx:H with Al2O3 stack is 10 mV higher in implied open circuit voltage and 60 μs higher in minority carrier lifetime than SiONx with Al2O3 stack at Ni silicide formation temperature for 1.8% open area ratio. This can be explained by hydrogen passivation at the Al2O3/Si interface and Al2O3 layer of laser damaged area during annealing.

Polyaniline–graphene quantum dots (PANI–GQDs) are considered as an important candidate for applications in photovoltaic cells. In this work, GQDs were prepared using sono-Fenton reagent from reduced graphene oxide (rGO). PANI–GQD hybrid was also synthesized using the chemical in situ polymerization method. The synthesized materials were characterized using UV–visible (UV–Vis) spectroscopy, photoluminescence (PL) spectroscopy, current–voltage (I–V) characteristic, thermal gravimetric analysis (TGA), Raman spectroscopy, and X-ray diffraction (XRD). Dynamic light scattering was also used to estimate the lateral size of GQDs. The enhanced visible-light absorbance in the hybrid was confirmed by UV–Vis analysis and the decrease in intensity around 3461 cm−1 in FT-IR spectra was due to the interaction between functional groups of PANI with GQDs. This led to improved thermal stability and conductivity as observed from TGA and I–V analysis, respectively. Moreover, the Raman spectrum for PANI–GQDs showed a decrease in the peak at ~ 1348 and ~ 1572 cm−1 as compared to PANI and GQDs. Similarly, from the XRD profile of PANI–GQDs, a shift in peak was observed due to an alteration in the microstructure. A sandwich device with cell structure glass/ITO/PANI–GQDs/Al was fabricated and its application was tested. Current density–voltage (J–V) curve of the device was measured with a Keithley SMU 2400 unit under an illumination intensity of 100 Wm−2 simulating the AM 1.5 solar spectrum. The hybrid exhibited photovoltaic properties, and 0.857% efficiency was observed in response to the applied voltage. This work suggests that PANI can be used as an alternative material for photovoltaic cells.

MoO3 metal oxide nanostructure was formed by hydrothermal synthesis, and a perovskite solar cell with an MoO3 hole transfer layer was fabricated and evaluated. The characteristics of the MoO3 thin film were analyzed according to the change of hydrothermal synthesis temperature in the range of 100 ℃ to 200 ℃ and mass ratio of AMT : nitric acid of 1 : 3 ~ 15 wt%. The influence on the photoelectric conversion efficiency of the solar cell was evaluated. Nanorod-shaped MoO3 thin films were formed in the temperature range of 150 ℃ to 200 ℃, and the chemical bonding and crystal structure of the thin films were analyzed. As the amount of nitric acid added increased, the thickness of the thin film decreased. As the thickness of the hole transfer layer decreased, the photoelectric conversion efficiency of the perovskite solar cell improved. The maximum photoelectric conversion efficiency of the perovskite solar cell having an MoO3 thin film was 4.69 % when the conditions of hydrothermal synthesis were 150 ℃ and mass ratio of AMT : nitric acid of 1 : 12 wt%.

In this study, using a wet chemical process, we evaluate the effectiveness of different solution concentrations in removing layers from a solar cell, which is necessary for recovery of high-purity silicon . A 4-step wet etching process is applied to a 6-inch back surface field(BSF) solar cell. The metal electrode is removed in the first and second steps of the process, and the anti-reflection coating(ARC) is removed in the third step. In the fourth step, high purity silicon is recovered by simultaneously removing the emitter and the BSF layer from the solar cell. It is confirmed by inductively coupled plasma mass spectroscopy(ICP-MS) and secondary ion mass spectroscopy(SIMS) analyses that the effectiveness of layer removal increases with increasing chemical concentrations. The purity of silicon recovered through the process, using the optimal concentration for each process, is analyzed using inductively coupled plasma atomic emission spectroscopy(ICP-AES). In addition, the silicon wafer is recovered through optimum etching conditions for silicon recovery, and the solar cell is remanufactured using this recovered silicon wafer. The efficiency of the remanufactured solar cell is very similar to that of a commercial wafer-based solar cell, and sufficient for use in the PV industry.

Hole carrier selective MoOx film is obtained by atomic layer deposition(ALD) using molybdenum hexacarbonyl[Mo(CO)6] as precursor and ozone(O3) oxidant. The growth rate is about 0.036 nm/cycle at 200 g/Nm of ozone concentration and the thickness of interfacial oxide is about 2 nm. The measured band gap and work function of the MoOx film grown by ALD are 3.25 eV and 8 eV, respectively. X-ray photoelectron spectroscopy(XPS) result shows that the Mo6+ state is dominant in the MoOx thin film. In the case of ALD-MoOx grown on Si wafer, the ozone concentration does not affect the passivation performance in the as-deposited state. But, the implied open-circuit voltage increases from 576 oC to 620 oC at 250 g/Nm after post-deposition annealing at 350 oC in a forming gas ambient. Instead of using a p-type amorphous silicon layer, high work function MoOx films as hole selective contact are applied for heterojunction silicon solar cells and the best efficiency yet recorded (21 %) is obtained.

Copper electroplating and electrode patterning using a screen printer are applied instead of lithography for heterostructure with intrinsic thin layer(HIT) silicon solar cells. Samples are patterned on an indium tin oxide(ITO) layer using polymer resist printing. After polymer resist patterning, a Ni seed layer is deposited by sputtering. A Cu electrode is electroplated in a Cu bath consisting of Cu2SO4 and H2SO4 at a current density of 10 mA/cm2. Copper electroplating electrodes using a screen printer are successfully implemented to a line width of about 80 μm. The contact resistance of the copper electrode is 0.89 mΩ·cm2, measured using the transmission line method(TLM), and the sheet resistance of the copper electrode and ITO are 1 Ω/□ and 40 Ω/□, respectively. In this paper, a screen printer is used to form a solar cell electrode pattern, and a copper electrode is formed by electroplating instead of using a silver electrode to fabricate an efficient solar cell electrode at low cost.

Flexible dye-sensitized solar cells using binder free TiO2 paste for low temperature sintering are developed. In this paste a small amount of titanium gel is added to a paste of TiO2 nanoparticle. Analysis of titanium gel paste prepared at 150 ℃ shows that it has a pure anatase phase in XRD and mesoporous structure in SEM. The formation of the titanium gel 1- 2 nm coated layer is confirmed by comparing the TEM image analysis of the titanium gel paste and the pristine paste. This coating layer improves the excited electron transfer and electrical contact between particles. The J-V curves of the organic binder DSSCs fabricated at 150℃ shows a current density of 0.12 mA/cm2 and an open-circuit voltage of 0.47 V, while the titanium gel DSSCs improves electrical characteristics to 5.04 mA/cm2 and 0.74 V. As a result, the photoelectric conversion efficiency of the organic binder DSSC prepared at low temperature is as low as 0.02 %, but the titanium gel paste DSSCs has a measured effciency of 2.76%.

We investigate the effect of light intensity and wavelength of a solar cell device using photoconductive atomic force microscopy(PC-AFM). A POCl3 diffusion doping process is used to produce a p-n junction solar cell device based on a poly- Si wafer, and the electrical properties of prepared solar cells are measured using a solar cell simulator system. The measured open circuit voltage(Voc) is 0.59 V and the short circuit current(Isc) is 48.5 mA. Moreover, the values of the fill factors and efficiencies of the devices are 0.7 and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, is used for direct measurements of photoelectric characteristics in limited areas instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics are observed. Results obtained through PC-AFM are compared with the electric/optical characteristics data obtained through a solar simulator. The voltage(VPC-AFM) at which the current is 0 A in the I-V characteristic curves increases sharply up to 18 W/m2, peaking and slowly falling as light intensity increases. Here, VPC-AFM at 18 W/m2 is 0.29 V, which corresponds to 59 % of the average Voc value, as measured with the solar simulator. Furthermore, while the light wavelength increases from 300 nm to 1,100 nm, the external quantum efficiency(EQE) and results from PC-AFM show similar trends at the macro scale but reveal different results in several sections, indicating the need for detailed analysis and improvement in the future.

In the present work, we synthesize nano-sized ZnO, SnO2, and TiO2 powders by hydrothermal reaction using metal chlorides. We also examine the energy-storage characteristics of the resulting materials to evaluate the potential application of these powders to dye-sensitized solar cells. The control of processing parameters such as pressure, temperature, and the concentration of aqueous solution results in the formation of a variety of powder morphologies with different sizes. Nano-rod, nano-flower, and spherical powders are easily formed with the present method. Heat treatment after the hydrothermal reaction usually increases the size of the powder. At temperatures above 1000oC, a complete collapse of the shape occurs. With regard to the capacity of DSSC materials, the hydrothermally synthesized TiO2 results in the highest current density of 9.1 mA/cm² among the examined oxides. This is attributed to the fine particle size and morphology with large specific surface area.

We propose a speedy two-step deposit process to form an Au electrode on hole transport layer(HTL) without any damage using a general thermal evaporator in a perovskite solar cell(PSC). An Au electrode with a thickness of 70 nm was prepared with one-step and two-step processes using a general thermal evaporator with a 30 cm source-substrate distance and 6.0 × 10−6 torr vacuum. The one-step process deposits the Au film with the desirable thickness through a source power of 60 and 100 W at a time. The two-step process deposits a 7 nm-thick buffer layer with source power of 60, 70, and 80 W, and then deposits the remaining film thickness at higher source power of 80, 90, and 100W. The photovoltaic properties and microstructure of these PSC devices with a glass/FTO/TiO2/perovskite/ HTL/Au electrode were measured by a solar simulator and field emission scanning electron microscope. The one-step process showed a low depo-temperature of 88.5 oC with a long deposition time of 90 minutes at 60 W. It showed a high depo-temperature of 135.4 oC with a short deposition time of 8 minutes at 100 W. All the samples showed an ECE lower than 2.8% due to damage on the HTL. The two-step process offered an ECE higher than 6.25% without HTL damage through a deposition temperature lower than 88 oC and a short deposition time within 20 minutes in general. Therefore, the proposed two-step process is favorable to produce an Au electrode layer for the PSC device with a general thermal evaporator.

We investigate the effect of the modification of cellulose acetate propionate as an organic vehicle for silver paste on solar cell efficiency. For the modification of cellulose acetate propionate, poly(ethylene glycol) is introduced to the hydroxyl groups of a cellulose acetate propionate backbone via esterification reaction. The chemical structure and composition of poly(ethylene glycol) functionalized cellulose acetate propionate is characterized by Attenuated total reflectance Fourier transform infrared, 1H nuclear magnetic resonance, differential scanning calorimetry and thermogravimetric analysis. Due to the effect of structural change for poly(ethylene glycol) functionalized cellulose acetate propionate on the viscosity of silver paste, the solar cell efficiency increases from 18.524% to 18.652 %. In addition, when ethylene carbonate, which has a structure similar to poly(ethylene glycol), is introduced to cellulose acetate propionate via ring opening polymerization, we find that the efficiency of the solar cell increases from 18.524% to 18.622%.

표면 플라즈마 처리된 Cu nanoparticle (NPs)로 제작된 Organic photovoltaic (OPV)소자는 일잔 OPV 소자보 다 높은 효율성을 보여준다. Nps는 다양한 합성법으로 제조되어 29 nm의 지름을 가진 입자형태를 갖추었다. 이러한 Nps는 P3HT:PCBM과 결합하여 OPV 활성층으로 사용되었는데 적층방법으로 spin과 bar 코팅 방식을 사용하였다. 제작된 소자의 효율 평가에서 스핀코팅으로 제작된 P3HT:PCBM과 Nps가 결합된 P3HT:PCBM 이 각각 1.01과 4.39%로 Np의 효과로 인한 효율 증가를 볼 수 있었다. 바코팅 프로세스를 (8, 20, 50 um 갭)를 사용하였을 경우 20 um 갭의 바코터에서 스핀코터와 같은 두께의 활성층 두께를 보였다. 제작된 활성층은 바코터 그루브 특성으로 인해 트렌치 패턴이 형성되어 빛 흡수를 약화시켜 효율성을 저하시켰다.

The potential application of palladium-ruthenium composite membranes to the separation of hydrogen from chlorosilane gases in silicon-based industries was investigated. Ru/Pd/Al2O3/PSS membranes were prepared by electroless plating. Hydrogen permeation tests and temperature programmed desorption analysis revealed that the addition of a Ru over layer on Pd changed the hydrogen adsorption characteristics, resulting in improved stability of the membrane at low temperatures. The Ru/Pd/Al2 O3/PSS composite membrane had a stable hydrogen permeation flux of 1.8 m3m-2h-1 over a period of 1,200 h at 180°C without suffering hydrogen embrittlement. After exposure to impurities such as HCl and SiHCl3 , the hydrogen permeation flux of the Ru/Pd/Al2 O3/PSS composite membrane was stable over a period of 9h with feed pressure of 2.0 bar at 225°C.

In commercial solar cells, the pattern of the front electrode is critical to effectively assemble the photo generated current. The power loss in solar cells caused by the front electrode was categorized as four types. First, losses due to the metallic resistance of the electrode. Second, losses due to the contact resistance of the electrode and emitter. Third, losses due to the emitter resistance when current flows through the emitter. Fourth, losses due to the shading effect of the front metal electrode, which has a high reflectance. In this paper, optimizing the number of finger on a 4 ´ 4 solar cell is demonstrated with known theory. We compared the short circuit current density and fill factor to evaluate the power loss from the front metal contact calculation result. By experiment, the short circuit current density(Jsc), taken in each pattern as 37.61, 37.53, and 37.38 mA/ cm2 decreased as the number of fingers increased. The fill factor(FF), measured in each pattern as 0.7745, 0.7782 and 0.7843 increased as number of fingers increased. The results suggested that the efficiency(Eff) was measured in each pattern as 17.51, 17.81, and 17.84 %. Throughout this study, the short-circuit current densities(Jsc) and fill factor(FF) varied according to the number of fingers in the front metal pattern. The effects on the efficiency of the two factors were also investigated.

태양광 발전의 효율을 높이기 위한 실란 커플링제와 나노 무기산화물을 첨가한 계면활성제를 이용한 친수성 코팅액을 제조하여 태양광 모듈의 유리 표면에 도포하여 김서림 방지(antifogging) 및 내오염성(antifouling)을 부여하였다. 1% 친수성 코팅액에 나노 무기산화물인 LudoxⓇ를 첨가한 경우 LudoxⓇ의 농도에 관계없이 초친수성 과 우수한 antifogging 효과를 나타내었다. 그러나 유리에 대한 antifouling 효과는 LudoxⓇ를 10% 이상 첨가하였을 때부터 발현되었다. 또한, pH 4에서 가수분해한 TEOS를 첨가한 코팅액의 경우 TEOS를 0.7% 첨가한 경우 steam test 결과 antifogging 효과를 유지하였으며, 코팅한 유리 표면을 젖은 킴와이 프로 100회 문지른 후에도 pollution test 결과 antifouling 효과를 유지하였다. 또한, AFM을 이용하여 표면 거칠기(Rq)를 확인한 결과 TEOS를 너무 많이 첨가하면 가장 높은 표면 거칠기 값을 보였으며 코 팅된 표면의 상태도 매우 불규칙하였다. TEOS가 0.7% 첨가된 경우 비교적 높은 표면 거칠기 값과 안 정된 표면 상태를 나타내었다. 결론적으로 김서림 방지 특성만을 위하여는 나노 무기산화물인 LudoxⓇ는 필요없으나, antifouling의 효과를 나타내기 위해서는 최소 10%의 LudoxⓇ가 첨가되어야 하며, 우수한 내구성을 나타내기 위해서 는 0.7%의 TEOS를 첨가해야 한다.

We improve the energy conversion efficiency (ECE) of a dye sensitized solar cell (DSSC) by preparing a working electrode (WE) with localized surface plasmon resonance (LSPR) by inducing Au thin films with thickness of 0.0 to 5.0 nm, deposited via sputtering. Field emission scanning electron microscopy and atomic force microscopy were used to characterize the microstructure of the blocking layer (BL) of the Au thin films. Micro-Raman measurement was employed to confirm the LSPR effect, and a solar simulator and potentiostat were used to evaluate the photovoltaic properties, including the impedance and the I-V of the DSSC of the Au thin films. The results of the microstructural analysis confirmed that nano-sized Au agglomerates were present at certain thicknesses. The photovoltaic results show that the ECE reached a value of 5.34% with a 1-nm thick-Au thin film compared to the value of 5.15 % without the Au thin film. This improvement was a result of the increase in the LSPR of the TiO2 layer that resulted from the Au thin film coating. Our results imply that the ECE of a DSSC may be improved by coating with a proper thickness of Au thin film on the BL.

The cobalt silicides were investigated for employment as a catalytic layer for a DSSC. Using an E-gun evaporation process, we prepared a sample of 100 nm-thick cobalt on a p-type Si (100) wafer. To form cobalt silicides, the samples were annealed at temperatures of 300 oC, 500 oC, and 700 oC for 30 minutes in a vacuum. Four-point probe, XRD, FE-SEM, and CV analyses were used to determine the sheet resistance, phase, microstructure, and catalytic activity of the cobalt silicides. To confirm the corrosion stability, we also checked the microstructure change of the cobalt silicides after dipping into iodide electrolyte. Through the sheet resistance and XRD results, we determined that Co2Si, CoSi, and CoSi2 were formed successfully by annealing at 300 oC, 500 oC, and 700 oC, respectively. The microstructure analysis results showed that all the cobalt silicides were formed uniformly, and CoSi and CoSi2 layers were very stable even after dipping in the iodide electrolyte. The CV result showed that CoSi and CoSi2 exhibit catalytic activities 67 % and 54 % that of Pt. Our results for Co2Si, CoSi, and CoSi2 revealed that CoSi and CoSi2 could be employed as catalyst for a DSSC.