In this study, a core-shell powder and sintered specimens using a mechanically alloyed (MAed) Ti-Mo powder fabricated through high-energy ball-milling are prepared. Analysis of sintering, microstructure, and mechanical properties confirms the applicability of the powder as a sputtering target material. To optimize the MAed Ti-Mo powder milling process, phase and elemental analyses of the powders are performed according to milling time. The results reveal that 20 h of milling time is the most suitable for the manufacturing process. Subsequently, the MAed Ti-Mo powder and MoO3 powder are milled using a 3-D mixer and heat-treated for hydrogen reduction to manufacture the core-shell powder. The reduced core-shell powder is transformed to sintered specimens through molding and sintering at 1300 and 1400oC. The sintering properties are analyzed through X-ray diffraction and scanning electron microscopy for phase and porosity analyses. Moreover, the microstructure of the powder is investigated through optical microscopy and electron probe microstructure analysis. The Ti-Mo core-shell sintered specimen is found to possess high density, uniform microstructure, and excellent hardness properties. These results indicate that the Ti-Mo core-shell sintered specimen has excellent sintering properties and is suitable as a sputtering target material.

Homogeneous multicomponent indium gallium zinc oxide (IGZO) ceramics for transparent electrode targets are prepared from the oxides and nitrates as the source materials, and their properties are characterized. The selected compositions were In2O3:Ga2O3:ZnO = 1:1:2, 1:1:6, and 1:1:12 in mole ratio based on oxide. As revealed by X-ray diffraction analysis, calcination of the selected oxide or nitrides at 1200oC results in the formation of InGaZnO4, InGaZn3O6, and InGaZn5O8 phases. The 1:1:2, 1:1:6, and 1:1:12 oxide samples pressed in the form of discs exhibit relative densities of 96.9, 93.2, and 84.1%, respectively, after sintering at 1450oC for 12 h. The InGaZn3O6 ceramics prepared from the oxide or nitrate batches comprise large grains and exhibit homogeneous elemental distribution. Under optimized conditions, IGZO multicomponent ceramics with controlled phases, high densities, and homogeneous microstructures (grain and elemental distribution) are obtained.

We have investigated the properties of thin film transistors(TFT) fabricated using zinc tin oxide(ZTO) thin films deposited via on-axis sputtering and FTS methods. ZTO thin films deposited by FTS showed lower root-mean-square(RMS) roughness and more uniformity than those deposited via on-axis sputtering. We observed enhanced electrical properties of ZTO TFT deposited via FTS. The ZTO films were deposited at room temperature via on-axis sputtering and FTS. The as-deposited ZTO films were annealed at 400 oC. The TFT using the ZTO films deposited via FTS process exhibited a high mobility of 12.91 cm2/V.s, a low swing of 0.80 V/decade, Vth of 5.78 V, and a high Ion/off ratio of 2.52 × 106.

Cu-Mn compacts are fabricated by the pulsed current activated sintering method (PCAS) for sputtering target application. For fabricating the compacts, optimized sintering conditions such as the temperature, pulse ratio, pressure, and heating rate are controlled during the sintering process. The final sintering temperature and heating rate required to fabricate the target materials having high density are 700oC and 80oC/min, respectively. The heating directly progresses up to 700oC with a 3 min holding time. The sputtering target materials having high relative density of 100% are fabricated by employing a uniaxial pressure of 60 MPa and a sintering temperature of 700oC without any significant change in the grain size. Also, the shrinkage displacement of the Cu-Mn target materials considerably increases with an increase in the pressure at sintering temperatures up to 700oC.

In this study, we report the sintering behavior and properties of a Ge2Sb2Te5 alloy powders for use as asputtering target by spark plasma sintering. The effect of various sintering parameters, such as pressure, temperature andtime, on the density and hardness of the target has been investigated in detail. Structural characterization was performedby scanning electron microscopy and X-ray diffraction. Hardness and thermal properties were measured by differentialscanning calorimetry and micro-vickers hardness tester. The density and hardness of the sintered Ge2Sb2Te5 materialswere 5.8976~6.3687 g/cm3 and 32~75 Hv, respectively.

This study attempted to manufacture a Cu-Ga coating layer via the cold spray process and to investigate the applicability of the layer as a sputtering target material. In addition, changes made to the microstructure and prop- erties of the layer due to annealing heat treatment were evaluated, compared, and analyzed. The results showed that coating layers with a thickness of 520 mm could be manufactured via the cold spray process under optimal conditions. With the Cu-Ga coating layer, the α-Cu and Cu3Ga were found to exist inside the layer regardless of annealing heat treatment. The microstructure that was minute and inhomogeneous prior to thermal treatment changed to homogeneous and dense with a more clear division of phases. A sputtering test was actually conducted using the sputtering target Cu- Ga coating layer (~2 mm thickness) that was additionally manufactured via the cold-spray coating process. Consequently, this test result confirmed that the cold sprayed Cu-Ga coating layer may be applied as a sputtering target material.

In this study, we mainly focus on the study of densification of gas-atomized Cu-50 wt.%In-13 wt.%Ga alloy powder without occurrence of crack during the forming process. Cu-50 wt.%In-13 wt.%Ga alloy powder was consolidated by sintering and rolling processes in order to obtain high density. The phase and microstructure of formed materials were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM) and optical microscopy (OM), respectively. Warm rolling using copper can result in the improvement of density. The specimen obtained with 80% of rolling reduction ratio at using cooper can have the highest density of .

This study attempted to manufacture a Cu-15 at.%Ga coating layer via the cold spray process and investigated the effect of heat treatment environment on the properties of cold sprayed coating material. Three kinds of heat treatment environments, +argon, pure argon, and vacuum were used in this study. Annealing treatments were conducted at /1 hr. With the cold sprayed coating layer, pure -Cu and small amounts of were detected in the XRD, EDS, EPMA analyses. Porosity significantly decreased and hardness also decreased with increasing annealing temperature. The inhomogeneous dendritic microstructure of cold sprayed coating material changed to the homogeneous and dense one (microstructural evolution) with annealing heat treatment. Oxides near the interface of particles could be reduced by heat treatment especially in vacuum and argon environments. Vacuum environment during heat treatment was suggested to be most effective one to improve the densification and purification properties of cold sprayed Cu-15 at.%Ga coating material.

Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dcmagnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural,electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO filmshave (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surfacemorphology of the films changed according to the film thickness. The samples with higher surface roughnessexhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrierconcentration revealed that there were no changes for all the film thicknesses. The optical transmittances weremore than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity,4.13×10-4Ω·cm-1, was found in 750nm films with an electron mobility (µ) of 10.6cm2V-1s-1 and a carrierconcentration (n) of 1.42×1021cm-3.

In this study, tantalum (Ta) compacts were fabricated in a spark plasma sintering (SPS) process and their microstructure and mechanical properties were investigated. Ta compacts with a density of 99% were successfully fabricated by controlling the sintering conditions of the current and the temperature. The density and hardness were increased as the sintering temperature increased. The Ta2C compound was observed at the surface of the compacts due to the contact between the Ta powder and graphite mold during the sintering process. The main fracture mode showed a mixed type with intergranular and transgranular modes having some roughness.

rf-마그네트론 스퍼터링 방법을 이용하여 높은 광투과성을 지니며 c-축 배향된 KLN 박막을 제작하였다. 하소 및 소결 과정을 거쳐서 균일하고 안정한 상태의 KLN 타겟을 제조하였다. KLN 타겟은 화학량론적인 조성 및 K가 30%, 60%, 그리고 Li가 각각 15%, 30% 과량된 조성을 사용하였으며 K와 Li의 휘발을 방지하기 위하여 낮은 온도에서 소결시켰다. 제조된 타겟을 사용하여 rf-magnetron sputtering 방법으로 박막을 제조하였으며, 이때 K가 60% Li가 30% 과량된 타겟으로 제조할 때 단일상의 KLN 박막을 얻을 수 있었다. KLN 박막은 코닝 1737 기판 위에서 우수한 결정성과 높은 c-축 배향성을 나타내었으며, 이때 박막의 성장조건은 고주파 전력 100 W, 공정 압력 150 mTorr, 기판 온도 580˚C였다. 가시광 영역에서 박막의 투과율은 약 90% 이고, 흡수는 333 nm에서 발생하였으며 632.8 nm에서 박막의 굴절율은 1.93이었다.

대향타겟트형 스파터기에서 BaO-l2Fe 복합타겟트를 사용하고 50% O2+Ar 스파터가스를 사용한 반응성 프라즈마를 스펙트로스포프법으로 검진하였다. 프라즈마의 스펙트럼은 Ba, Ba+, Fe, FeO, Fe+, Ar, Ar+, O, O+의 피크로 이루어져 있었으며 타겟트로 부터 멀어짐에 따라 이온의 상대강도는 중성원소의 그것에 비하여 더 감소하였다.