본 연구에서는 실리카 복합막 기반 고분자 전해질막을 5단 연료전지 스택에 적용하여 성능 평가를 수행하였다. 이를 통하여, 개별 구성 요소의 성능도 중요하지만, 전체적인 관점에서 공급되는 연료의 유량이 스택 성능에 중요한 역할을 하며, 특히 수소의 유량에 크게 의존한다는 사실이 확인하였다. 산소의 유량을 증가시켜도 성능의 변화는 미미한 반면, 수소 의 유량을 증가시키면 성능이 향상되는 것을 확인하였다. 그러나 수소의 유량 증가는 수소와 산소 유량 비율의 불균형을 초 래하여 장기적으로는 스택 성능과 내구성을 저하시키는 문제가 관찰되었다. 이러한 현상을 스택 구성 요소 및 개별 단위 셀 에서도 관찰할 수 있었으며, 따라서 스택 운전 시 각 구성 요소의 성능을 최적화하는 것 외에도 균일한 유량 제어를 위해 유 로 설계 및 운전 조건을 최적화하는 것이 중요하다는 것을 알 수 있었다. 마지막으로 실리카 복합막은 최대 출력 기준 25 W 이상의 성능을 나타내어 실제 연료전지 시스템에 적용하기에 충분한 성능을 갖춘 것으로 판단된다.

In this paper, we investigated the effect of the passivation stack with Al2O3, hydrogenated silicon nitride (SiNx:H) stack and Al2O3, silicon oxynitride (SiONx) stack in the n type bifacial solar cell on monocrystalline silicon. SiNx:H and SiONx films were deposited by plasma enhanced chemical vapor deposition on the Al2O3 thin film deposited by thermal atomic layer deposition. We focus on passivation properties of the two stack structure after laser ablation process in order to improve bifaciality of the cell. Our results showed SiNx:H with Al2O3 stack is 10 mV higher in implied open circuit voltage and 60 μs higher in minority carrier lifetime than SiONx with Al2O3 stack at Ni silicide formation temperature for 1.8% open area ratio. This can be explained by hydrogen passivation at the Al2O3/Si interface and Al2O3 layer of laser damaged area during annealing.

Silicon oxynitride that can be deposited two times faster than general SiNx:H layer was applied to fabricate the passivation protection layer of atomic layer deposition (ALD) Al2O3. The protection layer is deposited by plasma-enhanced chemical vapor deposition to protect Al2O3 passivation layer from a high temperature metallization process for contact firing in screen-printed silicon solar cell. In this study, we studied passivation performance of ALD Al2O3 film as functions of process temperature and RF plasma effect in plasma-enhanced chemical vapor deposition system. Al2O3/SiON stacks coated at 400 oC showed higher lifetime values in the as-stacked state. In contrast, a high quality Al2O3/SiON stack was obtained with a plasma power of 400 W and a capping-deposition temperature of 200 oC after the firing process. The best lifetime was achieved with stack films fired at 850 oC. These results demonstrated the potential of the Al2O3/SiON passivated layer for crystalline silicon solar cells.

In the segmented-in-series solid-oxide fuel cells (SIS-SOFCs), fabrication techniques which use decalcomania paper have many advantages, i.e., an increased active area of the electrode; better interfacial adhesion property between the anode, electrolyte and cathode; and improved layer thickness uniformity. In this work, a cell-stack was fabricated on porous ceramic flattened tube supports using decalcomania paper, which consists of an anode, electrolyte, and a cathode. The anode layer was 40μm thick, and was porous. The electrolyte layers exhibited a uniform thickness of about 20μm with a dense structure. Interfacial adhesion was improved due to the dense structure. The cathode layers was 30μm thick with porous structure, good adhesion to the electrolyte. The ohmic resistance levels at 800, 750 and 700˚C were measured, showing values of 1.49, 1.58 and 1.65Ω·cm2, respectively. The polarization resistances at 800, 750 and 700˚C were measured to be 1.63, 2.61 and 4.17cm2, respectively. These lower resistance values originated from the excellent interfacial adhesion between the anode, electrolyte and cathode. In a two-cell-stack SOFC, open-circuit voltages(OCVs) of 1.915, 1.942 and 1.957 V and maximum power densities(MPD) of 289.9, 276.1 and 220.4mW/cm2 were measured at 800, 750 and 700˚C, respectively. The proposed fabrication technique using decalcomania paper was shown to be feasible for the easy fabrication of segmented-in-series flattened tube SOFCs.