에트린자이트(ettringite, Ca6[Al(OH)6]2(SO4)3·26H2O)는 콘크리트 내에서 특이한 성질을 나타내는 황산염광물이다. 팽윤성 결정구조로 인해 경화된 콘크리트에 이차적으로 생성되면 팽창과 균열을 발생하여 콘크리트 내구성을 저하함으로써, 흔히 콘크리트의 암으로 불려진다. 본 연구에서는 국내에서 상업적으로 스케일링 방지제 혹은 청관제로 활용되고 있는 일부 결정성장억제제를 선택 적용하여, 콘크리트에 유해한 황산염이차 광물인 에트린자이트의 결정성장억제 가능성을 시험하였다. 시험을 위한 에트린자이트 용액합성법을 개발하고, 세 가지 유형의 결정성장억제제들의 에트린자이트 결정성장에 대한 억제 효과를 검토하였다. 에트린자이트의 용액합성시험 결과, 수산화칼슘 포화용액에 대한 황산알루미늄 용액의 양적 균형이 이루어진 상태에서 순수한 에트린자이트가 생성되며, 용액 중 SO42- 이온에 대해 Ca2+ 이온의 비율이 증가함에 따라 모노설페이트(monosulfate) 혹은 세미설페이트(semisulfate)가 생성된다. 용액합성법에 의한 에트린자이트의 결정 생성은 용액들의 반응 시작과 거의 동시에 일어나며 (induction time 〈 2min.), 반응 시작 1시간 정도 지나면 반응이 거의 완료되는 것으로 나타났다. 결정성장억제제들의 에트린자이트 결정성장억제 효과에 대한 실험결과, 폴리카르복시산염 (Polycarboxylate) 계의 PBCT (2-Phosphonobutane-1,2,4-Tricarboxylic Acid)와 무기인산염 (inorganic phosphate)계의 SHMP (Sodium Hexametaphosphate)는 실험조건에서 상대적으로 에트린자이트 결정성장억제의 효과는 적은 것으로 나타났다. 반면에 유기인산염 (organic phosphate)계의 HEDP (1-Hydoxyethylidene-1, 1-Diphosphonic Acid)는 0.1 vol.% 이상의 농도에서 효과적으로 에트린자이트 및 기타 황산염광물들의 결정성장을 억제하여 비정질의 겔(gel) 상의 물질을 생성하였다.

In this study, a vertical type LPE system has been developed for III-V semiconductor compounds single crystal growth. On the basis of the experience & basic study using this system, the system modification has been carried out for a ultra thin multi-layer single crystal. The temperature fluctuation was within ±0.006℃ at 800℃, temperature uniformity for graphite boat around was within ±0.15℃ at 650℃, and cooling rate was controllable from 2.2℃/min to 0.05℃/min. As a result it is considered to satisfy the condition to grow a ultra thin layer single crystal of III-V semiconductor compounds.

Shortening the lasing wavelength(particularly below infrared ; the visible region) of laser diodes is very attractive because it can provide a wide range of applications in the fields of optical information, measurement, sensor, the development of medical instrument, and optical communication through plastic fibers. According to the recent researches on the field, InGaAsP/GaAs was suggested as a material for red-light laser. In this study, in order to grow InGaAsP/GaAs epitaxial layer on InGaAsP/GaAs by LPE, we used GaP and InP two phase solution technique for 670nm and 780 nm region, respectively. Through the X-ray diffraction measurement for the epitaxial layer grown from the experiments, we found that the lattice mismatch of In0.46Ga0.54As0.07P0.93/GaAs and In0.19Ga0.81As0.62P0.38/GaAs was about +0.3% and +0.1%, respectively.

In order to grow InGaAsP epitaxial layer on GaAs by LPE, an accurate phase diagram for In-Ga-As-P quarternary compounds is required. But the short wavelength InGaAsP/GaAs phase diagram for full wavelength range was not yet reported. In this study, therefore, a theoretical calculation has been carried out by using thermodynamic's equation for InGaAsP/GaAs in order to get the relation between the mole fraction of the sloute and solid phase compounds. And the calculation being compared with the dta of Kawanishi et. al, the result has been shown that his phase diagram obtained by the calculation can apply to growing InGaAsP/GaAs by LPE.

In this paper the results for thin multi-layer InGaAsP(1.3μm)/InP crystal growth by vertical liquid epitaxial growing furnance have been presented. The growth rates of InGaAsP layer and InP layer at cooling rate of 0.3℃/min and the growing temperature of 630℃ were obtained as 0.11 μm/min and 0.06 μm/min, respectively, by the uniform cooling with two phase solution technique.