We have investigated the properties of thin film transistors(TFT) fabricated using zinc tin oxide(ZTO) thin films deposited via on-axis sputtering and FTS methods. ZTO thin films deposited by FTS showed lower root-mean-square(RMS) roughness and more uniformity than those deposited via on-axis sputtering. We observed enhanced electrical properties of ZTO TFT deposited via FTS. The ZTO films were deposited at room temperature via on-axis sputtering and FTS. The as-deposited ZTO films were annealed at 400 oC. The TFT using the ZTO films deposited via FTS process exhibited a high mobility of 12.91 cm2/V.s, a low swing of 0.80 V/decade, Vth of 5.78 V, and a high Ion/off ratio of 2.52 × 106.

대향타겟트형 스파터기에서 BaO-l2Fe 복합타겟트를 사용하고 50% O2+Ar 스파터가스를 사용한 반응성 프라즈마를 스펙트로스포프법으로 검진하였다. 프라즈마의 스펙트럼은 Ba, Ba+, Fe, FeO, Fe+, Ar, Ar+, O, O+의 피크로 이루어져 있었으며 타겟트로 부터 멀어짐에 따라 이온의 상대강도는 중성원소의 그것에 비하여 더 감소하였다.