In this work, narrow-band green-emitting CsPbBr3 particles are embedded in commercialized glass composites by a facile dry process. By optimizing the method through sintering in glass frit (GF) composites including CsBr and PbBr2, used as precursors, the encapsulation of CsPbBr3 particles made them waterproof with green fluorescence. To improve the fluorescent properties by reducing aggregation of CsPbBr3, fumed silica (FS) is additionally used to help particles avoid bulking up in the glass matrix. The CsPbBr3 perovskite/glass composites are characterized using scanning electron microscopy (SEM) images and energy-dispersive X-ray spectroscopy (EDS) maps, which support the existence of CsPbBr3 particles in the glass matrix. The photoluminescence (PL) properties demonstrate that the emission spectrum peak, full width at half maximum (FWHM), and photoluminescence quantum yield (PLQY) values are 519 nm, 17 nm, and 17.7 %. We also confirm the water-resistant properties. To enhance water/moisture stability, the composite sample is put directly into water, with its PLQY monitored periodically under UV light.

농경지는 농업부문에서 발생하는 온실가스인 N2O의 배출원이다. 따라서 농경지에서 N2O를 줄일 수 연구가 필요하며, 본 연구에서는 농경지에 작물재배 시 무경운기술을 적용하고, 녹비작물로서 호밀과 헤어리배치를 각각 투입하여 N2O 배출량 비교 평가하였다. 재배 기간 중 토양에 질소원이 공급된 초기에 배출량이 높았으며, 토양온도는 20~25°C, 수분함량은 20~30% 범위에서 N2O 배출량이 높았다. 작물재배기간 동안 경운 유무와 투입된 질소원에 따른 처리구간 통계적 유의한 차이가 발생했다. 농경지 토양에서 배출되는 N2O는 무경운을 통해 CF, HV 그리고 RY 처리구에서 각각 51.8%, 31.7% 그리고 59.6% 감축되었다. 또한 무경운 헤어리배치 (HV-NT) 처리구에서 관행 (CFCT) 처리구 대비 59.0% N2O 배출을 저감할 수 있었다. 헤어리배치를 투입함으로써 화학비료 사용량을 줄일 수 있고, 무경운을 통해 토양 교란을 방지하여 농경지 토양에서 배출되는 N2O를 저감할 수 있었다. 이러한 감축기술에 대한 온실가스 저감효과를 평가하는 연구와 향후 온실가스 감축사업과 연계할 수 있도록 검인증 방법을 포함한 방법론 구축 등이 필요하다. 이후 농업분야 온실가스 감축사업인 배출권거래제 외부사업, 농업농촌 자발적 온실가스 감축사업, 저탄소농축산물 인증제 등과 연계하여 농업현장에서 활용할 수 있도록 해야 한다.

We have fabricated and evaluated newNew high high-efficiency green green-light light-emitting phosphorescent devices with an emission layer of [TCTA/TCTA1/3TAZ2/3/TAZ] : Ir(ppy)3 were fabricated and evaluated, and compared the electroluminescence characteristics of these devices were compared with the conventional phosphorescent devices with emission layers of (TCTA1/3TAZ2/3) : Ir(ppy)3 and (TCTA/TAZ) : Ir(ppy)3. The current density, luminance, and current efficiency of the a device with an emission layer of (80Å-TCTA/90˚Å-TCTA1/3TAZ2/3/130Å-TAZ) : 10%-Ir(ppy)3 were 95 mA/cm2, 25000 cd/m2, and 27 cd/A at an applied voltage of 10 V, respectively. The maximum current efficiency was 52 cd/A under the a luminance value of 400 cd/m2. The peak wavelength and FWHM (FWHM (full width at half maximum) in the electroluminescence spectral were 513 nm and 65 nm, respectively. The color coordinate was (0.30, 0.62) on the CIE (Commission Internationale de I'Eclairage) chart. Under the a luminance of 15000 cd/m2, the current efficiency of the a device with an emission layer of (80Å-TCTA/90Å-TCTA1/3TAZ2/3/130Å-TAZ) : 10%-Ir(ppy)3 was 34 cd/A, which has beenshowed an improvement of improved 1.7 and 1.4 times compared to those of the devices with emission layers of (300Å-TCTA1/3TAZ2/3) : 10%-Ir(ppy)3 and (100Å-TCTA/200Å-TAZ) : 10%-Ir(ppy)3, respectively.

High-efficiency phosphorescent organic light emitting diodes using TCTA-TAZ as a double host and Ir(ppy)3 as a dopant were fabricated and their electro-luminescence properties were evaluated. The fabricated devices have the multi-layered organic structure of 2-TNATA/NPB/(TCTA-TAZ) : Ir(ppy)3/BCP/SFC137 between an anode of ITO and a cathode of LiF/AL. In the device structure, 2-TNATA[4,4',4"-tris(2-naphthylphenyl-phenylamino)-triphenylamine] and NPB[N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] were used as a hole injection layer and a hole transport layer, respectively. BCP [2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline] was introduced as a hole blocking layer and an electron transport layer, respectively. TCTA [4,4',4"-tris(N-carbazolyl)-triphenylamine] and TAZ [3-phenyl-4-(1-naphthyl)-5-phenyl-1,2,4-triazole] were sequentially deposited, forming a double host doped with Ir(ppy)3 in the [TCTA-TAZ] : Ir(ppy)3 region. Among devices with different thickness combinations of TCTA (50 Å-200 Å) and TAZ (100 Å-250 Å) within the confines of the total host thickness of 300 Å and an Ir(ppy)3-doping concentration of 7%, the best electroluminescence characteristics were obtained in a device with 100 Å-think TCTA and 200 Å-thick TAZ. The Ir(ppy)3 concentration in the doping range of 4%-10% in devices with an emissive layer of [TCTA (100 Å)-TAZ (200 Å)] : Ir(ppy)3 gave rise to little difference in the luminance and current efficiency.