The natures of fatigue crack growth under Mode Ⅱ loading are studied. End notched flexure beam specimens were used. The effects of adherend thickness, rubber modification and adhesive thickness on fatigue crack growth were examined. The experimental results show that some of these parameters apparently do affect fatigue crack growth. Resistance to ModeⅡ fatigue crack growth are increased by rubber modification. The effects of adhesive thickness and rubber content on fatigue crack growth were explained by von Mises's equivalent stress using BEM analysis. For unmodified epoxy adhesives, the fatigue crack growth properties under Mode Ⅱ loadings were significantly different in all regions. For rubber-modified epoxy adhesives, they were also different in the first and second regions, but in the third region, they were similar

In this paper, the features of fatigue crack growth under ModeⅠ loading are studied. Double cantilever beam specimens were used. The effects of adherend thickness, rubber modification and adhesive thickness on fatigue crack growth were examined. The experimental results show that some of these parameters do apparently affect fatigue crack growth. Resistance to ModeⅠ fatigue crack growth are increased by rubber modification. The effects of adhesive thickness and rubber content on fatigue crack growth were explained by von Mises's equivalent stress using BEM analysis.

본 연구에서는 이온선보조증착법에 의해 Si(100)기판위에 정합성장된 Si0.5Ge0.5층의 핵성성과 성장을 고찰하였다. 성장층에 대한 AFM(Atomic Force Microscopy), RHEED(Reflection High Energy Electron diffraction) 등의 분석결과 Si(100)기판위에 이온선보조증착에 의하여 성장된 Si0.5Ge0.5</TEX>층은 Stranski-Kranstanov(SK)기구로 성장되며, 300eV, 10 μA/cm2의 Ar이온선을 조사시키는 경우 결정성이 향상되었고, SK 성장 방식의 임계두께가 증가하였다. Ar 이온선 조사에 의해 MBE에 의한 정합성장온도(550˚C-600˚C)보다 훨씬 낮은 200˚C에서 정합성장이 가능하였으며, xmn값은 10.5%로 MBE에 의한 정합성장시 보고된 xmn 값보다 낮았다. 이온충돌에 의해 발생한 3차원 island의 분해와 표면확산의 증가가 Si0.5Ge0.5층의 성장에 현저한 영향을 미쳤으며, 이온충돌의 영향은 3차원 island의 생성보다 3차원 island의 분해가 더 안정한 낮은 증착온도에서만 관찰되었다.