In this paper, we analyze user's manipulation and reaction in an accelerometer-based game interface, as compared with a touch joystick-based game interface. To roll the ball, the user carefully grabs and adjusts the smartphone with both hands in the accelerometer-based game interface; while the user very quickly clicks the up, down, left, right, buttons in the touch joystick-based game interface, because it is already familiar to the user. The accelerometer-based game interface is relatively more immersive and interesting than the touch joystick-based game interface; because the user gets more desired results by elaborately operating the game with both hands rather than by clicking the buttons with the thumb.

Silicon heterojunction solar cells have been studied by many research groups. In this work, silicon heterojunction solar cells having a simple structure of Ag/ZnO:Al/n type a-Si:H/p type c-Si/Al were fabricated. Samples were fabricated to investigate the effect of transparent conductive oxide growth conditions on the interface between ZnO:Al layer and a-Si:H layer. One sample was deposited by ZnO:Al at low working pressure. The other sample was deposited by ZnO:Al at alternating high working pressure and low working pressure. Electrical properties and chemical properties were investigated by light I-V characteristics and AES method, respectively. The light I-V characteristics showed better efficiency on sample deposited by ZnO:Al by alternating high working pressure and low working pressure. Atomic concentrations and relative oxidation states of Si, O, and Zn were analyzed by AES method. For poor efficiency samples, Si was diffused into ZnO:Al layer and O was diffused at the interface of ZnO:Al and Si. Differentiated O KLL spectra, Zn LMM spectra, and Si KLL spectra were used for interface reaction and oxidation state. According to AES spectra, sample deposited by high working pressure was effective at reducing the interface reaction and the Si diffusion. Consequently, the efficiency was improved by suppressing the SiOx formation at the interface.

The magnetron sputtering was used to deposit Ni buffer layers on the polyimide surfaces to increase the adhesion strength between Cu thin films and polyimide as well as to prevent Cu diffusion into the polyimide. The Ni layer thickness was varied from 100 to 400Å. The adhesion strength increased rather significantly up to 200Å of Ni thickness, however, there was no significant increase in strength over 200Å. The XPS analysis revealed that Ni thin films could increase the adhesion strength by reacting with the polar C=O bonds on the polyimide surface and also it could prevent Cu diffusion into the polyimide. The Cu/Ni/ polyimide multilayer thin films showed a high stability even at the high heating temperature of 200˚C, however, at the temperature of 300˚C, Cu diffused through the Ni buffer layer into polyimide, resulting in the drastic decrease in adhesion strength.