This study investigated the effects of the post annealing temperatures on the electrical and interfacial properties of a metal-semiconductor-metal photodetector(MSM-PD) device. The interdigitate type MSM-PD devices had the structure Al(500 nm) / Ti(200 nm) / poly-Si(500 nm). Structural analyses of the MSM-PD devices were performed by employing X-ray diffraction(XRD), scanning electron microscopy(SEM) and transmission electron microscope(TEM). Electrical characteristics of the MSM-PD were also examined using current-voltage(I-V) measurements. The optimal post annealing condition for the Schottky contact of MSM-PD devices are 350℃-30minutes. However, as the annealing temperature and time are increased, electrical characteristics of MSM-PD device are degraded. Especially, for the annealing conditions of 400℃-180minutes and 500℃-30minutes, the I-V measurement itself was impossible. These results are closely related to the solid phase reactions at the interface of MSM-PD device, which result in the formation of intermetallic compounds such as Al3Ti and Ti7Al5Si12.

Transparent ITO films were deposited on a polycarbonate substrate with RF magnetron sputtering in a pure argon(Ar) and oxygen (O2) gas atmosphere, and then post deposition electro annealed for 20 minutes in a 4×10-1Pa vacuum. Electronbombardment with an accelerating voltage of 100V increased the substrate temperature to 120oC. XRD analysis of the depositedITO films did not show any diffraction peaks, while electro annealed films indicated the growth of crystallites on the (211), (222),and (400) planes. The sheet resistance of ITO films decreased from 103 to 82Ω/□. The optical transmittance of ITO films inthe visible wavelength region increased from 85 to 87%. Observation of the work function demonstrated that the electro-annealingincreased the work function of ITO films from 4.4 to 4.6eV. The electro annealed films demonstrated a larger figure of meritof 3.0×10-3Ω-1 than that of as deposited films. Therefore, the electro annealed films had better optoelectrical performances thanas deposited ITO films.

1.5 μm-thick copper films deposited on silicon wafers were successfully bonded at 415˚C/25 kN for 40 minutes in a thermo-compression bonding method that did not involve a pre-cleaning or pre-annealing process. The original copper bonding interface disappeared and showed a homogeneous microstructure with few voids at the original bonding interface. Quantitative interfacial adhesion energies were greater than 10.4 J/m2 as measured via a four-point bending test. Post-bonding annealing at a temperature that was less than 300˚C had only a slight effect on the bonding energy, whereas an oxygen environment significantly deteriorated the bonding energy over 400˚C. This was most likely due to the fast growth of brittle interfacial oxides. Therefore, the annealing environment and temperature conditions greatly affect the interfacial bonding energy and reliability in Cu-Cu bonded wafer stacks.

본 연구에서는 BPSG(borophosphosilicate glass)/SiO2/Si 기판상에 5000Å의 구리박막을 화학증착한 후 Ar 분위기하 250-550˚C, 5-90초 급속열처리하여 열처리 전후의 결정구조, 면저항, 미세구조의 박막특성 변화를 분석하였다. 후열처리된 구리박막에서는 결정성 및 (111) 배향의개선과 함께 결정립 성장이 확인되었으나, 구리의 표면산화반응과 BPSG 내로의 급속한 확산에 의해 전기적 특성의 개선은 미미하였다. 그리고 열처리 박막내에는 구리 실리사이드상의 형성이 발견되지 않았으며, 250˚C/90초의 저온 장시간 또는 550˚C/20초의 고온 단시간 조건에서 전형적으로 나타나는 Cu2O 상이 시편의 전기비저항 증가와 표면열화에 직접적으로 영향을 미쳤다. 또한, 이들 결과로부터 급속열처리법에 의한 Cu/BPSG 열처리의 공정범위를 규명할 수 있었다.