Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, the electrical properties of Au and Cu Schottky contacts to n-Ge were comparatively investigated. Lower values of barrier height, ideality factor and series resistance were obtained for the Au contact as compared to the Cu contact. The values of capacitance showed strong dependence on the bias voltage and the frequency. The presence of an inversion layer at the interface might reduce the intercept voltage at the voltage axis, lowering the barrier height for C-V measurements, especially at lower frequencies. In addition, a higher interface state density was observed for the Au contact. The generation of sputter deposition-induced defects might occur more severely for the Au contact; these defects affected both the I-V and C-V characteristics.

We developed an Al sputtering process by varying the plasma power, process temperature, and film thickness. We observed an increase of hillock distribution and average diameter with increasing plasma power, process temperature, and film thickness. Since the roughness of a film increases with the increase of the distribution and average size of hillocks, the control of hillock formation is a key factor in the reduction of Al corrosion. We observed the lowest hillock formation at 30 W and 100 oC. This growth characteristic of sputtered Al thin films will be useful for the reduction of Al corrosion in the future of the electronic packaging field.

Tin oxides have been studied for various applications such as gas detecting materials, transparent electrodes, transparent devices, and solar cells. p-type SnO is a promising transparent oxide semiconductor because of its high optical transparency and excellent electrical properties. In this study, we fabricated p-type SnO thin film using rf magnetron sputtering with an SnO/Sn composite target; we examined the effects of various oxygen flow rates on the SnO thin films. We fundamentally investigated the structural, optical, and electrical properties of the p-type SnO thin films utilizing X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), UV/Vis spectrometry, and Hall Effect measurement. A p-type SnO thin film of PO2 = 3 % was obtained with > 80 % transmittance, carrier concentration of 1.12 × 1018 cm−3, and mobility of 1.18 cm2V− 1s−1. With increasing of the oxygen partial pressure, electrical conductivity transition from p-type to n-type was observed in the SnO crystal structure.

Glancing angle deposition (GLAD) is a powerful technique to control the morphology and microstructure of thin film prepared by physical vapor deposition. Chromium (Cr) thin films were deposited on a polymer substrate by a sputtering technique using GLAD. The change in thickness and Vickers microhardness for the samples was observed with a change in the glancing angle. The adhesion properties of the critical load (Lc) by a scratch tester for the samples were also measured with varying the glancing angle. The critical load, thickness and Vickers microhardness for the samples decreased with an increase in the glancing angle. However, the thickness of the Cr thin film prepared at a 90o glancing angle showed a relatively large value of 50 % compared to that of the sample prepared at 0o. The results of X-ray diffraction and scanning electron microscopy demonstrated that the effect of GLAD on the microstructure of samples prepared by sputter technique was not as remarkable as the samples prepared by evaporation technique. The relatively small change in thickness and microstructure of the Cr thin film is due to the superior step-coverage properties of the sputter technique.

The effect of a sputter deposition sequence of Cu, Zn, and Sn metal layers on the properties of Cu2ZnSnS4 (CZTS) was systematically studied for solar cell applications. The set of Cu/Sn/Zn/Cu multi metal films was deposited on a Mo/SiO2/Si wafer using dc sputtering. CZTS films were prepared through a sulfurization process of the Cu/Sn/Zn/Cu metal layers at 500˚C in a H2S gas environment. H2S (0.1%) gas of 200 standard cubic centimeters per minute was supplied in the cold-wall sulfurization reactor. The metal film prepared by one-cycle deposition of Cu(360 nm)/Sn(400 nm)/Zn(400 nm)/Cu(440 nm) had a relatively rough surface due to a well-developed columnar structure growth. A dense and smooth metal surface was achieved for two- or three-cycle deposition of Cu/Sn/Zn/Cu, in which each metal layer thickness was decreased to 200 nm. Moreover, the three-cycle deposition sample showed the best CZTS kesterite structures after 5 hr sulfurization treatment. The two- and three-cycle Cu/Sn/Zn/Cu samples showed high-efficient photoluminescence (PL) spectra after a 3 hr sulfurization treatment, wheres the one-cycle sample yielded poor PL efficiency. The PL spectra of the three-cycle sample showed a broad peak in the range of 700-1000 nm, peaked at 870 nm (1.425 eV). This result is in good agreement with the reported bandgap energy of CZTS.

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at 200˚C and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

The electrochromic properties of tungsten oxide films grown by RF sputtering were investigated. Among the sputter parameters, first the Ar:O2 ratios were controlled with division into only an O2 environment, 1:1 and 4:1. The structure of each film prepared by these conditions was studied by X-ray diffraction, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The sputter-deposited tungsten oxide films had an amorphous structure regardless of the Ar:O2 ratios. The chemical compositions, however, were different from each other. The stoichiometric structure and low-density film was obtained at higher O2 contents. Electrochemical tests were performed by cyclic voltammetry and chronoamperometry at 0.05 M H2SO4 solutions. The current density and charge ratio was estimated during the continuous potential and pulse potential cycling at -0.5 V and 1.8 V, respectively. The film grown in a higher oxygen environment had a higher current density and a reversible charge reaction during intercalation and deintercalation. The in-situ transmittance tests were performed by He-Ne laser (633 nm). At higher oxygen contents, a big transmittance difference was observed but the response speed was too slow. This was likely caused by higher film resistivity. Furthermore, the effect of sputtering pressure was also investigated. The structure and surface morphology of each film was observed by X-ray diffraction and scanning electron microscopy. A rough surface was observed at higher sputtering pressure, and this affected the higher transmittance difference and coloration efficiency.

This paper has relatively high technical standard and experimental skill. The fabrication of TCO film with hightransparency, low resistance and low chromaticity require exact control of several competing factors. This paper has resolvedthese problems reasonably well, thus recommended for publication. Indium tin oxide(ITO) thin films were by D.C. magnetronroll-to-roll sputter system utilizing ITO and SiO2 targets of ITO and SiO2. In this experiment, the effect of D.C. power, windingspeed, and oxygen flow rate on electrical and optical properties of ITO thin films were investigated from the view point ofsheet resistance, transmittance, and chromaticity(b*). The deposition of SiO2 was performed with RF power of 400W, Ar gasof 50sccm and the deposition of ITO, DC power of 600W, Ar gas of 50sccm, O2 gas of 0.2sccm, and winding speed of 0.56m/min. High quality ITO thin films without SiO2 layer had chromaticity of 2.87, sheet resistivity of 400ohm/square, and trans-mittance of 88% and SiO2-doped ITO Thin film with chromaticity of 2.01, sheet resistivity of 709ohm/square, and transmittanceof more than 90% were obtained. As a result, SiO2 was coated on PET before deposition of ITO, their chromaticity(b*) andtransmittance were better than previous results of ITO films. These results show that coating of SiO2 induced arisingchromaticity(b*) and transmittance. If the thickness of SiO2 is controlled, sheet resistance value of ITO film will be expected tobe better for touch screen. A four point probe and spectrophotometer are used to investigate the properties of ITO thin films.

Indium Tin Oxide (ITO) thin films on Polyethylene Terephtalate (PET) substrate were prepared by Roll-to-Roll sputter system with targets of 5 wt% and 10 wt% SnO2 at room temperature. The influence of the chromaticity (b*) and transmittance properties of the ITO Films were investigated. The ITO thin films were deposited as a function of the DC power, rolling speed, and Ar/O2 gas flow ratio, and then characterized by spectrophotometer. Their crystallinity and surface resistance were also analyzed by X-ray diffractometer and 4-point probe. As a result, the chromaticity (b*) and transmittance of the ITO films were broadly dependent on the thickness, which was controlled by the rolling speed. When the ITO films were prepared with the DC power of 300 W and the Ar/O2 gas flow ratio of 30/1 sccm using 10 wt% SnO2 target as a function of the rolling speeds 0.01 through 0.10 m/min, its chromaticity (b*) and transmittance were about -4.01 to 11.28 and 75.76 to 86.60%, respectively. In addition, when the ITO films were deposited with the DC power of 400W and the Ar/O2 gas flow ratio of 30/2 sccm used in 5 wt% SnO2 target, its chromaticity (b*) and transmittance were about -2.98 to 14.22 and 74.29 to 88.52%, respectively.

TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about 1.8μm, which was formed for 200 minutes at 300˚. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.

순수한 동적 결합반응이고 전하 누적이 없는 이온 임플란테이션, 새로운 재료 개발 등에 음이온을 직접 사용하는 새로운 연구가 진행되고 있으며, 이러한 관점에서 새로운 고체상의 Cs이온 법이 실험실 규모로 연구되고 있다. 본 논문에서는 음이온 Cs gun으로 DLC 박막을 실리콘 위에 제조하였다. 이 시스템은 가스가 필요없으므로, 고 진공에서 증착이 일어난다. C(sup)-빔 에너지는 80~150eV 사이에서 조절이 우수하였다. Raman 분석결과 박막의 DLC 지수, 즉sp3비율은 이온 에너지 증가에 따라 증가하였으며, 미소 경도값 또한 7에서 14GPa로 증가하였다. DLC박막의 표면 평균거칠기(Ra)는 ~1Å정도로 아주 매끈하였으며, 불순물이 내재되지 않는 박막을 얻을 수 있었다.

형광등으로 사용되는 전기 에너지의 40%를 절약할 수 있는 방법으로서 그 반사값을 특수 은 반사박막으로 처리하여 고효율 및 내구성을 갖는 기술이 최근에 알려지고 있다. 이 박막들은 sputtering법을 이용한 것으로 주로 미국에서 생산되어지고 있다. 한편. evaporation 법으로 제작된 은 박막들은 일반적으로 반사효율에는 별문제가 없으나 부착력이 떨어지는 단점이 있다. 우리는 수년간 polyester를 기판으로 하고 몇가지 PVB 방법을 동원하여 고 반사율 및 부착력을 갖는 은경 박막을 확보하기 위해 연구를 해왔다. 그 결과, evaporation 법으로 제작된 은 박막은 96.4%의 반사율을 보이나 부착력은 12 Kg/cm2에 불과함을 확인하였고. sputter 법으로 제작한 시편들의 반사율은 96.3 %로 비슷하였으나 부착력이 /20 Kgcm2로 거의 두배로 뛰어올라 sputter법의 공정조건이 그 결과박막들의 물리적 특성에 미치는 긍정적 영향을 확인할 수 있었다. X-선 회절 분석결과 sputter의 경우에 (111)면이 우선성장함을 알 수 있었고, 시편의 단면으로부터 관찰된 치밀한 columnar 구조가 부착력을 향상시키고 있음이 확인되었다.

TiO2/Ag 계 적층형 투명 열절연 박막의 최적 제작조건 설정을 위한 기초 연구로써, 스퍼터조건에 따른 결정구조 및 광학특성 변화거동을 관찰하였다. 반응성 스퍼터링에 의한 TiO2박막 제작조건에 따른 결정구조 및 광학특성 변화거동을 관찰하였다. 반응성 스퍼터링에 의한 TiO2 박막 제작시 Po2/PAr≤0.2에서는 α-TiO2 의 결정구조였으나, Po2/PAr≤0.2에서는 기판 온도(RT-370˚C) 및 열처리 온도(100-800˚C)에 관계없이 non-stoichiometric 화합물로 판명되어, 산소 분압비가 TiO2 의 조성제어에 가장 중요한 변수로 나타났다. TiO2 박막은 열처리 온도의 증가(100-800˚C)에 따라 굴절률이 증가(2.19-2.37)하는 경향이었는데, 이는 박막의 밀도증가에서 기인하는 것으로 판단된다. Ag 박막은(111)면과 (200)면이 우세한 결정립으로, 기판 온도(RT-370˚C) 및 열처리(100-800˚C)에 따라 등축상의 결정립 성장을 관찰할 수 있었다.

Transfer matrix를 사용하여 TiO2 및 Ag 단일 박막과 TiO2/Ag/TiO2 다층 박막의 두계에 따른 투과도 특성을 예측하였으며, 이를 실제 스퍼터 증착하여 제조한 박막의 광학 특성과 비교하였다. TiO2 및 Ag 박막에서는 복소굴절률을 사용하므로써 실제 증착박막에서 측정된 특성과 근접한 투과도 곡선의 예측이 가능하였다. TiO2/Ag/TiO2 3층 박막의 광학 특성은 Ag의 TiO2층으로의 확산 및 응집에 의해 transfer matrix로 예측한 투과도 특성과 전혀 다른 거동을 나타내었다. 그러나 4nm 및 6nm 두계의 Ti 박막을 확산방지층으로 증착한 TiO2/Ti/Ag/Ti/TiO2 구조의 5층 박막에서는 transfer matrix를 사용하여 예측한 TiO2/Ag/TiO2 3층 박막의 투과도 곡선과 유사한 광학 특성을 얻을 수 있었다.