Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) with a coplanar structure were fabricated to investigate the feasibility of their potential application in large size organic light emitting diodes (OLEDs). Drain currents, used as functions of the gate voltages for the TFTs, showed the output currents had slight differences in the saturation region, just as the output currents of the etch stopper TFTs did. The maximum difference in the threshold voltages of the In-Ga-Zn-O (a-IGZO) TFTs was as small as approximately 0.57 V. After the application of a positive bias voltage stress for 50,000 s, the values of the threshold voltage of the coplanar structure TFTs were only slightly shifted, by 0.18 V, indicative of their stability. The coplanar structure TFTs were embedded in OLEDs and exhibited a maximum luminance as large as 500 nits, and their color gamut satisfied 99 % of the digital cinema initiatives, confirming their suitability for large size and high resolution OLEDs. Further, the image density of large-size OLEDs embedded with the coplanar structure TFTs was significantly enhanced compared with OLEDs embedded with conventional TFTs.

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 °C The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

Recently, the electron transport layer (ETL) has become one of the key components for high-performance perovskite solar cell (PSC). This study is motivated by the nonreproducible performance of ETL made of spin coated SnO2 applied to a PSC. We made a comparative study between tin oxide deposited by atomic layer deposition (ALD) or spin coating to be used as an ETL in N-I-P PSC. 15 nm-thick Tin oxide thin films were deposited by ALD using tetrakisdimethylanmiotin (TDMASn) and using reactant ozone at 120 °C. PSC using ALD SnO2 as ETL showed a maximum efficiency of 18.97 %, and PSC using spin coated SnO2 showed a maximum efficiency of 18.46 %. This is because the short circuit current (Jsc) of PSC using the ALD SnO2 layer was 0.75 mA/cm2 higher than that of the spin coated SnO2. This result can be attributed to the fact that the electron transfer distance from the perovskite is constant due to the thickness uniformity of ALD SnO2. Therefore ALD SnO2 is a candidate as a ETL for use in PSC vacuum deposition.

ITO 투명 전극 필름은 디스플레이, 전기 자동차 등 산업 전 범위에서 널리 사용되는 전자 재료이다. 본 연구에서는 이러한 indium tin oxide (ITO) 필름의 열성형 안정성을 향상시키기 위하여 Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) 전도성 고분자 코팅 용액 조성을 결정하였다. 1000 S/cm의 고 전도성을 보이는 PEDOT:PSS 용액에 끓는점이 각기 다른 4가지 종류의 용매를 희석하였고, 코팅 전 후 면저항 변화를 분석하였다. 또한 380~800 nm 영역의 광 투과율 분 석 및 Raman 스펙트럼 분석을 통하여 PEDOT:PSS 박막이 코팅된 ITO 투명 전극의 전기적 특성 결정 메커니즘을 규명하였 다. 230°C 열성형 공정 결과 ITO 필름은 113% 연신 상태에서 이미 전기 전도성을 읽었지만, ethylene glycol을 희석 용매로 사용하여 얻어진 전도성 고분자 박막이 적용된 ITO 필름은 126% 고 연신 상태에서도 초기 60 Ω/sq 면저항을 246 Ω/sq로 유지하는 우수한 전기 전도성을 보였다.

해양산업시설에서는 많은 종류의 유해물질의 배출 가능성이 존재하기 때문에 이에 대한 체계적인 대응체계가 필요하다. 그 중 연속자동 측정이 가능하면서 ppb 수준의 낮은 검출하한 (limit of detection:LOD)를 갖는 센서 구현은 매우 중요하다. 이를 위해 본 연구에서 는 활성탄소(carbon black)와 Indium tin oxide (ITO) 나노입자를 혼합한 film의 표면저항의 변화를 이용한 고성능 센서 제안 및 구현을 위해 성능인자를 최적화하였다. 센서 구조는 접촉 면적과 전극 간격을 최적화하였다. 접촉 면적이 증가하면 감도, LOD 성능이 향상되었으며 60 mm2에서 최적화되었다. 또한, 전극 간격은 접촉 면적을 일정하게 유지한 상태에서 변화시켰으며 센서 응답은 전극 간격이 감소함에 따라 증가하는 것을 확인하였다. 마지막으로 센서 표면에서의 유해물질의 잔류시간 증가를 위해 화학흡착제를 적용하였다. 화학흡착제는 유해 물질을 선택적으로 흡수할 수 있는 polyester계를 선택하였다. 그 결과 농도가 증가함에 따라 응답이 선형적으로 증가하여 센서로 활용이 가능한 것을 확인하였다. 이러한 3가지의 방법을 통해 센서를 제작하였을 때 액상 유해물질을 기존 센서의 LOD(89.9 ppb)와 비교 10~40 ppb 정도의 낮은 농도를 검출할 수 있는 센서를 구현하였다.

In this experimental work, a p-type c-Si (100) substrate with 8 × 8 × 2 mm dimension was taken for TiCN thin-film coating deposition. The whole deposition process was carried out by chemical vapor deposition (CVD) process. The Si substrate was placed within the CVD chamber at base pressure and process pressure of 0.75 and 500 mTorr, respectively, in the presence of TiO2 (99.99% pure) and C (99.99% pure) powder mixture. Later on, quantity of C powder was varied for different set experiments. The deposition of TiCN coating was carried out in the presence of N2– H2–TiCl4–CH3CN gas mixture and 600 ℃ of fixed temperature. The time for deposition was fixed for 90 min with 10 and 5 ℃ min− 1 heating and cooling rate, respectively. Later on, heat treatment process was carried out over these deposited TiCN samples to investigate the changing characteristics. The heat treatment was carried out at 800 ℃ within the CVD chamber in the absence of any gas flow rate. The morphological properties of heat-treated samples have been improved significantly, evidence is observed from SEM and AFM analyses. The structural analysis by XRD has been suggested, upgradation in crystallinity of the heat-treated film as it possessed with sharp and higher intensity peaks. Evidence has been found that the electrochemical properties are enhanced for heat-treated sample. Raman spectroscopy shows that the intensity of acoustic phonon modes predominates the optic phonon modes for untreated samples, whereas for heat-treated samples, opposite trends have been observed. However, significant degradation in mechanical properties for heat-treated sample has been observed compared to untreated sample.

The purpose of flow analysis is to develop a simple CFD analysis model to develop a heat transfer analysis model including transient heat transfer characteristics, especially phase change, of thin film evaporators. The simple analytical model focuses on the evaporation phase change. To reduce the computational cost, the shape was simplified to two dimensions, and the simulation time was set short with a focus on simulating the phase change phenomenon. In the future, based on this analysis model, we will develop an analysis model for simulating not only vaporization but also liquefaction, that is, transient distillation phenomenon, according to the shape of the thin film distillation device.

This study assessed the influences of fluorine introduced into DLC films on the structural and mechanical properties of the sample. In addition, the effects of the fluorine incorporation on the compressive stress in DLC films were investigated. For this purpose, fluorinated diamond-like carbon (F-DLC) films were deposited on cobalt-chromium-molybdenum substrates using radio-frequency plasma-enhanced chemical vapor. The coatings were examined by Raman scattering (RS), Attenuated total reflectance Fourier transform infrared spectroscopic analysis (ATR-FTIR), and a combination of elastic recoil detection analysis and Rutherford backscattering (ERDA-RBS). Nano-indentation tests were performed to measure hardness. Also, the residual stress of the films was calculated by the Stony equation. The ATR-FTIR analysis revealed that F was present in the amorphous matrix mainly as C-F and C-F2 groups. Based on Raman spectroscopy results, it was determined that F made the DLC films more graphitic. Additionally, it was shown that adding F into the DLC coating resulted in weaker mechanical properties and the F-DLC coating exhibited lower stress than DLC films. These effects were attributed to the replacement of strong C = C by feebler C-F bonds in the F-DLC films. F-doping decreased the hardness of the DLC from 11.5 to 8.8 GPa. In addition, with F addition, the compressive stress of the DLC sample decreased from 1 to 0.7 GPa.

AZO/Cu/AZO thin films were deposited on glass by RF magnetron sputtering. The specimens showed the preferred orientation of (0002) AZO and (111) Cu. The Cu crystal sizes increased from about 3.7 nm to about 8.5 nm with increasing Cu thickness, and from about 6.3 nm to about 9.5 nm with increasing heat treatment temperatures. The sizes of AZO crystals were almost independent of the Cu thickness, and increased slightly with heat treatment temperature. The residual stress of AZO after heat treatment also increased compressively from -4.6 GPa to -5.6 GPa with increasing heat treatment temperature. The increase in crystal size resulted from grain growth, and the increase in stress resulted from the decrease in defects that accompanied grain growth, and the thermal stress during cooling from heat treatment temperature to room temperature. From the PL spectra, the decrease in defects during heat treatment resulted in the increased intensity. The electrical resistivities of the 4 nm Cu film were 5.9 × 10-4 Ω ‧ cm and about 1.0 × 10-4 Ω ‧ cm for thicker Cu films. The resistivity decreased as the temperature of heat treatment increased. As the Cu thickness increased, an increase in carrier concentration resulted, as the fraction of AZO/Cu/AZO metal film increased. And the increase in carrier concentration with increasing heat treatment temperature might result from the diffusion of Cu ions into AZO. Transmittance decreased with increasing Cu thicknesses, and reached a maximum near the 500 nm wavelength after being heat treated at 200 °C.

The Cu2ZnSn(SxSe1-x)4 (CZTSSe) absorbers are promising thin film solar cells (TFSCs) materials, to replace existing Cu(In,Ga)Se2 (CIGS) and CdTe photovoltaic technology. However, the best reported efficiency for a CZTSSe device, of 13.6 %, is still too low for commercial use. Recently, partially replacing the Zn2+ element with a Cd2+element has attracting attention as one of the promising strategies for improving the photovoltaic characteristics of the CZTSSe TFSCs. Cd2+ elements are known to improve the grain size of the CZTSSe absorber thin films and improve optoelectronic properties by suppressing potential defects, causing short-circuit current (Jsc) loss. In this study, the structural, compositional, and morphological characteristics of CZTSSe and CZCTSSe thin films were investigated using X-ray diffraction (XRD), X-ray fluorescence spectrometer (XRF), and Field-emission scanning electron microscopy (FE-SEM), respectively. The FE-SEM images revealed that the grain size improved with increasing Cd2+ alloying in the CZTSSe thin films. Moreover, there was a slight decrease in small grain distribution as well as voids near the CZTSSe/Mo interface after Cd2+ alloying. The solar cells prepared using the most promising CZTSSe absorber thin films with Cd2+ alloying (8 min. 30 sec.) exhibited a power conversion efficiency (PCE) of 9.33 %, Jsc of 34.0 mA/cm2, and fill factor (FF) of 62.7 %, respectively.