본 논문에서는 비평형 분자동역학 시뮬레이션 기법을 사용하여 알루미늄 박막과 실리콘 웨이퍼 간 열경계저항을 예측하였다. 실리콘의 끝 단 고온부에 열을 공급하고, 같은 양의 열을 알루미늄 끝 단 저온부에서 제거하여 경계면을 통한 열전달이 일어나도록 하였으며, 실리콘 내부와 알루미늄 내부의 선형 온도 변화를 계산함으로써 경계면에서의 온도 차이에 따른 열저항 값을 구하였다. 300K 온도에서 5.13±0.17m2·K/GW의 결과를 얻었으며, 이는 열유속 조건의 변화와 무관함을 확인하였다. 아울러, 펨토초 레이저 기반의 시간영역 열반사율 기법을 사용하여 열경계저항 값을 실험적으로 구하였으며, 시뮬레이션 결과와 비교·검증하였다. 전자빔 증착기를 사용하여 90nm 두께의 알루미늄 박막을 실리콘(100) 웨이퍼 표면에 증착하였으며, 유한차분법을 이용한 수치해석을 통해 열전도 방정식의 해를 구해 실험결과와 곡선맞춤 함으로써 열경계저항을 정량적으로 평가하고 나노스케일에서의 열전달 현상에 관한 특징을 살펴보았다.

We report on the fabrication and characterization of an oxide photoanode with a zinc oxide (ZnO) nanorod array embedded in cuprous oxide (Cu2O) thin film, namely a ZnO/Cu2O oxide p-n heterostructure photoanode, for enhanced efficiency of visible light driven photoelectrochemical (PEC) water splitting. A vertically oriented n-type ZnO nanorod array is first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method and then a p-type Cu2O thin film is directly electrodeposited onto the vertically oriented ZnO nanorod array to form an oxide p-n heterostructure. The introduction of Cu2O layer produces a noticeable enhancement in the visible light absorption. From the observed PEC current density versus voltage (J-V) behavior under visible light illumination, the photoconversion efficiency of this ZnO/Cu2O p-n heterostructure photoanode is found to reach 0.39 %, which is seven times that of a pristine ZnO nanorod photoanode. In particular, a significant PEC performance is observed even at an applied bias of 0 V vs Hg/Hg2Cl2, which makes the device self-powered. The observed improvement in the PEC performance is attributed to some synergistic effect of the pn bilayer heterostructure on the formation of a built-in potential including the light absorption and separation processes of photoinduced charge carriers, which provides a new avenue for preparing efficient photoanodes for PEC water splitting.

본 연구에서는 강유전성 고분자를 이용하여 제작된 100 nm 이하 두께를 가지는 박막형 커페시터의 측정 주파수에 따른 분극 반전 특성을 측정, 분석하였다. 고정된 박막 두께에 대해, 인가되는 최고 전기장의 세기가 증가할수록 더 높은 항전계에서 분극 반전이 발생되었다. 고정된 최고 전기장에 대해, 박막의 두께에 무관하게 같은 항전계에서 분극 반전이 발생되었다. 모든 측정에서 로그스케일 전기장 및 로그스케일 주파수의 관계에서 약 0.12 ± 0.01의 비례 상수를 보였다. 결과적으로, 강유전체 고분자 커페시터가 40 nm 두께까지는 size effect 없이 일정한 분극 반전 특성을 보였다. 본 연구는 저전압 동작 고분자 메모리 소자의 동작 예측에 유용할 것이므로 저전압에서 동작 가능한 고분자 메모리 소자의 가능성을 보여준다.

The transfer characteristics of zinc tin oxide(ZTO) on silicon dioxide(SiO2) thin film transistor generally depend on the electrical properties of gate insulators. SiO2 thin films are prepared with argon gas flow rates of 25 sccm and 30 sccm. The rate of ionization of SiO2(25 sccm) decreases more than that of SiO2(30 sccm), and then the generation of electrons decreases and the conductivity of SiO2(25 sccm) is low. Relatively, the conductivity of SiO2(30 sccm) increases because of the high rate of ionization of argon gases. Therefore, the insulating performance of SiO2(25 sccm) is superior to that of SiO2(30 sccm) because of the high potential barrier of SiO2(25 sccm). The ZTO/SiO2 transistors are prepared to research the CO2 gas sensitivity. The stability of the transistor of ZTO/SiO2(25 sccm) as a high insulator is superior owing to the high potential barrier. It is confirmed that the electrical properties of the insulator in transistor devices is an important factor to detect gases.

Anti-reflection thin films are fabricated on glass substrates using the screen printing method. Tetra ethyl silicate(TEOS) and methyl tri methoxy silane(MTMS) are used as starting materials and buthyl carbitol acetate(BCA) and buthyl cellusolve(BC) are mixed to improve the viscosity of the solution. Anti-reflection thin films are fabricated according to the number of the screen mesh and the characteristics improve as the mesh size increases. The transmittance and reflectance of the coated thin film using 325 mesh are about 94 % and 0.43 % in the visible wavelength. The thickness and refractive index of the AR thin film are 107 nm and n = 1.26, respectively.

Although thin-film nanocomposite membranes (TFNs) have paved the way to develop high-performance reverse osmosis (RO) membranes, scale-up production of TFNs is still challenging issue. Herein, we introduced a novel preparation method for TFNs using spray-assisted nanofiller pre-deposition (Spray method) to circumvent the limitations in conventional method. The precise control of nanofiller (ZIF-8) loading was possible by simply varying the spraying ZIF-8 concentration. Most importantly, TFNs prepared by both Spray and conventional method showed similar RO performances, while Spray method only requires ~100 times minimized amount of ZIF-8 with an unprecedentedly short deposition time (< 1 min) ever reported. Our results revealed that Spray method would be promising for the scale-up of TFNs in terms of cost, time, and controllability.

This study investigates the microstructural properties of CoCrFeMnNi high entropy alloy (HEA) oxynitride thin film. The HEA oxynitride thin film is grown by the magnetron sputtering method using nitrogen and oxygen gases. The grown CoCrFeMnNi HEA film shows a microstructure with nanocrystalline regions of 5~20 nm in the amorphous region, which is confirmed by high-resolution transmission electron microscopy (HR-TEM). From the TEM electron diffraction pattern analysis crystal structure is determined to be a face centered cubic (FCC) structure with a lattice constant of 0.491 nm, which is larger than that of CoCrFeMnNi HEA. The HEA oxynitride film shows a single phase in which constituting elements are distributed homogeneously as confirmed by element mapping using a Cs-corrected scanning TEM (STEM). Mechanical properties of the CoCrFeMnNi HEA oxynitride thin film are addressed by a nano indentation method, and a hardness of 8.13 GPa and a Young’s modulus of 157.3 GPa are obtained. The observed high hardness value is thought to be the result of hardening due to the nanocrystalline microstructure.

To remove SO2 from flue gas, a thin film nanocomposite (TFN) hollow fiber membrane was decorated with Nafion/TiO2 nanoparticles. Morphological and structural analyses of the TFN membranes were performed using FTIR, SEM, EDX, TEM, and AFM. The gas permeation experiments were performed with pure gases and a mixed gas within a pressure range of 1-3 bar and feed gas flow rate of 0.03-0.15 L/min. The obtained experimental results suggest that the addition of Nf/TiO2 nanoparticles improved the membrane performance by introducing sulfonate and hydroxyl functional groups to the membrane, and thus increased SO2 permeability and selectivity. The SO2 permeability was found to be 411-1671 GPU, while the ideal selectivities achieved for SO2/N2 and SO2/CO2 were 2928 and 72, respectively. Overall, an SO2 removal efficiency of 93% was achieved by using the Nf/TiO2 incorporated TFN membrane.

Membrane fabrication is a critical area that hampers forward osmosis (FO) technology from industrialization. Herein, electrospun poly(vinyl alcohol) (PVA) nanofiber (NF) was used as a support layer for thin film composite (TFC) FO membrane. The PVA NF was incorporated with sulfonated graphene oxide (sGO). The oxygenous-rich sGO enhanced the hydrophilicity and mechanical strength of PVA NF as revealed by contact angle and tensile strength measurements, and pure water flux. On this support, the active polyamide layer was formed through interfacial polymerization. Meanwhile, FO performance of sGO/PVA TFC membrane is currently being evaluated. This work was supported by NRF of Korea funded by the Ministry of Science and ICT (2016R1A2B1009221 and 2017R1A2B2002109) and Ministry of Education (2009-0093816 and 22A20130012051 (BK21Plus)).

We report on the fabrication of a high performance reverse osmosis membrane based on a hydrophilic polyacrylonitrile support via an aromatic solvent-assisted interfacial polymerization process. The use of aromatic solvent (toluene or xylene) produced the membranes with unprecedentedly high NaCl rejection (~99.9%) and superior water flux, outperforming both the control membrane prepared using a conventional aliphatic solvent (n-hexane) and commercial membranes. The membranes fabricated using toluene or xylene had roof-like structures covering a thin and highly dense polyamide (PA) layer, which was induced by enhanced amine diffusion and the extended miscible layer resulting from the increased miscibility of aromatic solvent with water. The high performance of the membranes is attributed to thin and highly cross-linked basal PA layer.

Growing demands for reducing energy consumption have raised interest to design advanced materials for thin film composite (TFC) desalination membranes with high permselectivity and low fouling. Here, we synthesized a star-shaped polymer as a new building block material, which can be assembled into selective layer of the TFC membrane via a facile interfacial polymerization (IP). Star polymer with compact globular structure and high density amine functional groups enabled to fabricate higher permselectivity and lower fouling propensity membrane compared to commercial membranes. In addition, star polymer assembled TFC membrane can function as either nanofiltration or reverse osmosis membrane by simply adjusting IP process conditions, which cannot feasible in conventional materials, demonstrating remarkable versatility of our star polymer.

We examined the characteristics of indium tin zinc oxide (ITZO) thin film transistors (TFTs) on polyimide (PI) substrates for next-generation flexible display application. In this study, the ITZO TFT was fabricated and analyzed with a SiOx/ SiNx gate insulator deposited using plasma enhanced chemical vapor deposition (PECVD) below 350℃. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS) results revealed that the oxygen vacancies and impurities such as H, OH and H2O increased at ITZO/gate insulator interface. Our study suggests that the hydrogen related impurities existing in the PI and gate insulator were diffused into the channel during the fabrication process. We demonstrate that these impurities and oxygen vacancies in the ITZO channel/gate insulator may cause degradation of the electrical characteristics and bias stability. Therefore, in order to realize high performance oxide TFTs for flexible displays, it is necessary to develop a buffer layer (e.g., Al2O3) that can sufficiently prevent the diffusion of impurities into the channel.

We report on the efficient detection of NO gas by an all-oxide semiconductor p-n heterojunction diode structure comprised of n-type zinc oxide (ZnO) nanorods embedded in p-type copper oxide (CuO) thin film. The CuO thin film/ZnO nanorod heterostructure was fabricated by directly sputtering CuO thin film onto a vertically aligned ZnO nanorod array synthesized via a hydrothemal method. The transport behavior and NO gas sensing properties of the fabricated CuO thin film/ ZnO nanorod heterostructure were charcterized and revealed that the oxide semiconductor heterojunction exhibited a definite rectifying diode-like behavior at various temperatures ranging from room temperature to 250 oC. The NO gas sensing experiment indicated that the CuO thin film/ZnO nanorod heterostructure had a good sensing performance for the efficient detection of NO gas in the range of 2-14 ppm under the conditions of an applied bias of 2 V and a comparatively low operating temperature of 150 oC. The NO gas sensing process in the CuO/ZnO p-n heterostructure is discussed in terms of the electronic band structure.

HiPIMS(High Power Impulse Magnetron Sputtering)를 이용하여 탄소 박막을 증착하였다. 파워, 압력, 바이어스 전압, duty cycle에 따른 탄소 박막의 특성과 미세조직을 조사하였다. HiPIMS 파워가 증가할수록 증착 두께는 증가하였으며 표면이 거칠어지는 경향을 보였다. 압력의 증가 또한 표면이 거칠어지는 경향을 보였으나 증착 두께는 압력에 비례하지 않았다. 바이어스 전압이 증가함에 따라 조도가 나빠졌고 증착 두께는 증가하다가 임계 바이어스 전압부터는 감소하는 경향을 보였다. 듀티 사이클의 변화는 아크 발생과 같은 문제를 유발했으며 이는 챔버 구조나 타겟의 크기 등에 영향을 받는다. XPS로 sp²/sp³ 분율을 확인하였으며 sp²/sp³ 분율이 DC 스퍼터링의 경우보다 HiPIMS의 경우가 더 큰 것을 확인하였다.

본 연구에서는 0.5, 1.0, 1.5 wt%의 TiO2를 함유하는 인듐-티타늄 수산화물을 졸 및 염기 첨가에 의해 얻었고, 200oC와 500oC에서 겔화 과정을 통해 ITiO(Indium Titanate Oxide)를 얻었다. 200oC에서 겔화 과정 후 얻어지는 ITiO 입자가 작아서 조밀성이 있는 ITiO 타겟을 제조하였다. 0.5, 1.0, 1.5 wt%의 TiO2를 함유하는 ITiO 타겟을 스퍼터링하여 ITiO 박막을 유리판위에 제작하여 비저항, 전하 이동도, 캐리어 농도를 조사하였다. 이들 박막 중에서 산소 조성이 0.4 %인 조건에서 0.5 wt% 중량% TiO2를 함유하는 ITiO 타겟으로부터 제작된 ITiO 박막이 가장 낮은 비저항, 가장 큰 전하이동도 및 가장 낮은 캐리어 농도를 보임을 알 수 있었고, 얻어진 ITiO 박막의 광투과율을 측정하여 적외선 영역에서 광투과율이 ITO(Indium Tin Oxide) 박막에 비해 현저히 증가함을 발견하였다.

계면중합법은 혼합되지 않은 두 용액에 용해되어 있는 반응성 단량체들이 계면에서 중합되는 기술로 다양한 분야 에 응용되고 있다. 이 중, 수처리 분리막의 경우 m-phenylene diamine과 Trimesoyl chloride를 반응물로 사용하고 있다. 분리 막의 성능은 다양한 중합 성능에 의해 영향을 받고 있으며, 본 연구에서는 유기 용액의 퍼짐 속도가 어떻게 분리막 표면 및 구조에 영향을 주는지를 주사전자현미경을 통해 고찰하였다. 퍼짐 속도는 7.6과 25 mm/sec로 조절하였으며, 유기상 용액은 1~3방울까지 조절하였다. 관찰된 결과는 퍼짐 속도가 7.6 mm/sec에서는 한 방울 떨어트릴 경우, 25 mm/sec에서는 두 방울 떨어트릴 경우 폴리아마이드 막에 균열을 발견할 수 없었다. 반면 나머지 경우에 모두 균열이 발생하였다. 따라서, 초기 유기 용액의 퍼짐 속도는 폴리아마이드 분리막의 성능에 영향을 줄 것으로 관찰되었다.

20 μm의 얇은 폴리에스터(polyester) 부직포 상에 폴리술(polysulfone) 고분자 지지체를 제조하였다. 폴리술폰 표면에 3-aminopropyldimethyl silane을 sol-gel 중합함으로써 폴리실록산 지지체를 제조한 후 MPD 수용액과 TMC 유 기용액의 계면 중합을 실시를 통하여 정삼투 복합박막을 얻었다. FE-SEM/EDX 분석을 통하여 폴리실록산이 표면에 한하여 분포됨을 확인하였다. 1 M NaCl 유도용액/순수 인입용액 하에서의 FO-mode 유량이 146 - 209 LMH로 향상되 었으며 RSF값은 0.42 - 16.3 GMH로 유지함을 확인할 수 있었다.

Living organisms are based on the mass flux that induces various biological reactions using nanosized asymmetric ion channels as highly selectivity. However, it is the aggressive challenge to use these channels for artificial membranes because these are fragile and susceptible to deterioration under pH, temperature, mechanical stress, etc. This study, for the first time, synthesized a virus nanochannel-embedded thin film composite membrane. This membrane shows the extremely high ion selectively as well as low resistance. This property can be used to extract various multi-energies, for example, external pressure, water dropping, temperature difference, etc. This electricity results from the entropy gradient between membrane like electric eels.