The effects of fast neutron irradiation on the electrical and optical properties of Li (3 at%) doped ZnSnO (ZTO) thin films fabricated using a sol-gel process are investigated. From the results of Li-ZTO TFT characteristics according to change of neutron irradiation time, the saturation mobility is found to increase and threshold voltage values shift to a negative direction from 1,000 s neutron irradiation time. X-ray photoelectron spectroscopy analysis of the O 1s core level shows that the relative area of oxygen vacancies is almost unchanged with different irradiation times. From the results of band alignment, it is confirmed that, due to the increase of electron carrier concentration, the Fermi level (EF) of the sample irradiated for 1,000 s is located at the position closest to the conduction band minimum. The increase in electron concentration is considered by looking at the shallow band edge state under the conduction band edge formed by fast neutron irradiation of more than 1,000 s.

Due to its favorable optical properties, Cu2SnS3 (CTS) is a promising material for thin film solar cells. Doping, which modifies the absorber properties, is one way to improve the conversion efficiency of CTS solar cells. In this work, CTS solar cells with selenium doping were fabricated on a flexible substrate using sputtering method and the effect of doping on the properties of CTS solar cells was investigated. In XRD analysis, a shift in the CTS peaks can be observed due to the doped selenium. XRF analysis confirmed the different ratios of Cu/Sn and (S+Se)/(Cu+Sn) depending on the amount of selenium doping. Selenium doping can help to lower the chemical potential of sulfur. This effectively reduces the point defects of CTS thin films. Overall improved electrical properties were observed in the CTS solar cell with a small amount of selenium doping, and a notable conversion efficiency of 1.02 % was achieved in the CTS solar cell doped with 1 at% of selenium.

리튬금속전지(LMB)는 매우 큰 이론 용량을 갖지만 단락(short circuit), 수명 감소 등을 야기하는 덴드라이트(dendrite) 가 형성되는 큰 문제점을 갖고 있다. 본 연구에서는 poly(dimethylsiloxane) (PDMS)에 graphene oxide (GO) nanosheet를 고르게 분산시킨 PDMS/GO 복합체를 합성하였고 이를 박막 형태로 코팅하여 덴드라이트의 형성을 물리적으로 억제할 수 있는 막의 효과를 이끌어내었다. PDMS의 경우, 그 자체로는 이온 전도체가 아니기 때문에 리튬 이온의 통로를 형성시켜 리튬 이온의 이동을 원활하게 하기 위하여 5wt% 불산(HF)으로 에칭하여 PDMS/GO 박막이 이온전도성을 가질 수 있도록 하였다. 주사전자현미경(scanning electron microscopy, SEM)을 통해 전면 및 단면을 관찰하여 PDMS/GO 박막의 형상을 확인하였다. 그리고 PDMS/GO 박막을 리튬금속전지에 적용하여 실시한 배터리 테스트 결과, 100번째 사이클까지 쿨롱 효율(columbic efficiency) 이 평균 87.4%로 유지되었고, 박막이 코팅되지 않은 구리 전극보다 과전압이 감소되었음을 전압 구배(voltage profile) 를 통해 확인하였다.

최근 유기용매나노분리막(OSN) 기술의 응용분야가 확대되고 있으며 그에 따른 분리막 성능향상이 요구되고 있다. 본 연구에서는 박막복합막 형태의 OSN 분리막을 제조하여 용매의 투과성능을 측정하였다. 먼저 비용매상전이법(NIPS)을 활용하여 한외여과막 지지체를 제조하였고, 지지체의 성능을 최적화하기 위해 고분자(PSf or PES)와 기공형성제(PVP or Pluronic F-127)의 종류 및 조성의 영향을 확인하였다. 지지체 표면에 MPD와 TMC 단량체를 계면중합하여 폴리아미드 박막을 형성하였다. 제막된 박막복합막 OSN 분리막의 용매투과성능과 배제율을 측정하여 평가하였다. OSN 지지체로는 PSf 대비 PES 지지체의 성능이 안정적이었으며 Pluronic F-127보다 PVP를 도프용액에 첨가하였을 때 성능이 더 향상되었다. 기존 TMC-MPD 반응을 활용하여 박막복합막을 제조하였을 때 Acetonitrile 용매의 투과성능이 EtOH보다 월등히 높은 것을 확인 할 수 있었다.

I investigated the homogeneous liquid crystal alignment using parallel patterning on nickel oxide thin film. Nickel oxide thin film was prepared by sol-gel process, which is and cost effective method to form oxide thin film. Since the sol-gel process is solution driven method, the patterning on nickel oxide can be achieved by imprinting lithography. Nickel oxide with parallel pattern was used for liquid crystal alignment layer, which can be a alternative to conventional rubbing process to aligning a liquid crystal molecules. As a result, a high transmittance of 83.9% was confirmed for the NiO film, and a stable horizontal orientation pretilt angle of 0.2° occurred in the imprinted NiO film. These results were judged to be a positive level that can be commercialized in the horizontal alignment type liquid crystal display that is currently used universally. Anisotropic characteristics of nickel oxide induced by a parallel pattern leads to the alignment of liquid crystals.

Cu2ZnSn(S,Se)4(CZTSSe) thin film solar cells areone of the most promising candidates for photovoltaic devices due to their earth-abundant composition, high absorption coefficient and appropriate band gap. The sputtering process is the main challenge to achieving high efficiency of CZTSSe solar cells for industrialization. In this study, we fabricated CZTSSe absorbers on Mo coated soda lime glass using different pressures during the annealing process. As an environmental strategy, the annealing process is performed with S and Se powder, without any toxic H2Se and/or H2S gases. Because CZTSSe thin films have a very narrow stable phase region, it is important to control the condition of the annealing process to achieve high efficiency of the solar cell. To identify the effect of process pressure during the sulfo-selenization, we experiment with varying initial pressure from 600 Torr to 800 Torr. We fabricate a CZTSSe thin film solar cell with 8.24 % efficiency, with 435 mV for open circuit voltage(VOC) and 36.98 mA/cm2 for short circuit current density(JSC), under a highest process pressure of 800 Torr.

In the present study, the thermal conductivity of a silicon nitride(Si3N4) thin-film is evaluated using the dualwavelength pump-probe technique. A 100-nm thick Si3N4 film is deposited on a silicon (100) wafer using the radio frequency plasma enhanced chemical vapor deposition technique and film structural characteristics are observed using the X-ray reflectivity technique. The film’s thermal conductivity is measured using a pump-probe setup powered by a femtosecond laser system of which pump-beam wavelength is frequency-doubled using a beta barium borate crystal. A multilayer transient heat conduction equation is numerically solved to quantify the film property. A finite difference method based on the Crank-Nicolson scheme is employed for the computation so that the experimental data can be curve-fitted. Results show that the thermal conductivity value of the film is lower than that of its bulk status by an order of magnitude. This investigation offers an effective way to evaluate thermophysical properties of nanoscale ceramic and dielectric materials with high temporal and spatial resolutions.

목적 : 소다-라임-실리카 유리(soda-lime-silica glass,SG) 기판위에 Ti, Ba-naphthenates를 출발원료로 사용하고 졸겔법으로 나노 결정질 TiO2, BaTiO3 박막을 제조하였다. 박막의 특성을 분석하기 위하여 X-선 회절 분석, 전자현미경, UV스펙트럼을 이용하여 연구하였다. 방법 : 코팅용액을 soda-lime-silica glass 기판 위에 스핀코팅하고 공기분위기에서 500℃에서 열분해시켜 박막을 제조하였다. 제조된 TiO2, BaTiO3 박막의 결정화도는 고분해능 X-선 회절분석법으로 그리고 표면미세구조와 거칠기는 전계 방출 현미경과 원자간력 현미경으로 또 자외선(200〜380 nm), 가시광선(380〜750 nm), 적외선(750〜900 nm) 영역의 투과율은 UV-Visible-NIR 분광광도계로 측정되었다. 결과 : TiO2박막은 아나타제 상이 존재하였으며, BaTiO3 박막은 최고 피크가 확인되지 않았다. 열처리한 TiO2, BaTiO3 박막의 가시광선 투과율은 80% 이상의 투과율을 나타냈으며, BaTiO3 박막은 TiO2 박막보다 자외선 및 청광 차단율이 높았다. 결론 : BaTiO3 박막은 TiO2 보다 자외선 및 청광에 대해 더 높은 차단율이 나타냈으며, 가시광선 투과율은 제조된 모든 박막에서 80% 이상의 투과율이 측정되었다.

A triple-layered PMMA/Ni64Zr36/PDMS hydrogen gas sensor using hydrogen permeable alloy and flexible polymer layers is fabricated through spin coating and DC-magnetron sputtering. PDMS(polydimethylsiloxane) is used as a flexible substrate and PMMA(polymethylmethacrylate) thin film is deposited onto the Ni64Zr36 alloy layer to give a high hydrogenselectivity to the sensor. The measured hydrogen sensing ability and response time of the fabricated sensor at high hydrogen concentration of 99.9 % show a 20 % change in electrical resistance, which is superior to conventional Pd-based hydrogen sensors, which are difficult to use in high hydrogen concentration environments. At a hydrogen concentration of 5 %, the resistance of electricity is about 1.4 %, which is an electrical resistance similar to that of the Pd77Ag23 sensor. Despite using low cost Ni64Zr36 alloy as the main sensing element, performance similar to that of existing Pd sensors is obtained in a highly concentrated hydrogen atmosphere. By improving the sensitivity of the hydrogen detection through optimization including of the thickness of each layer and the composition of Ni-Zr alloy thin film, the proposed Ni-Zr-based hydrogen sensor can replace Pd-based hydrogen sensors.

We investigated the characteristics of nano crystalline silicon(nc-Si) thin-film solar cells on graphite substrates. Amorphous silicon(a-Si) thin-film solar cells on graphite plates show low conversion efficiency due to high surface roughness, and many recombination by dangling bonds. In previous studies, we deposited barrier films by plasma enhanced chemical vapor deposition(PECVD) on graphite plate to reduce surface roughness and achieved ~7.8 % cell efficiency. In this study, we fabricated nc-Si thin film solar cell on graphite in order to increase the efficiency of solar cells. We achieved 8.45 % efficiency on graphite plate and applied this to nc-Si on graphite sheet for flexible solar cell applications. The characterization of the cell is performed with external quantum efficiency(EQE) and current density-voltage measurements(J-V). As a result, we obtain ~8.42 % cell efficiency in a flexible solar cell fabricated on a graphite sheet, which performance is similar to that of cells fabricated on graphite plates.

본 논문에서는 비평형 분자동역학 시뮬레이션 기법을 사용하여 알루미늄 박막과 실리콘 웨이퍼 간 열경계저항을 예측하였다. 실리콘의 끝 단 고온부에 열을 공급하고, 같은 양의 열을 알루미늄 끝 단 저온부에서 제거하여 경계면을 통한 열전달이 일어나도록 하였으며, 실리콘 내부와 알루미늄 내부의 선형 온도 변화를 계산함으로써 경계면에서의 온도 차이에 따른 열저항 값을 구하였다. 300K 온도에서 5.13±0.17m2·K/GW의 결과를 얻었으며, 이는 열유속 조건의 변화와 무관함을 확인하였다. 아울러, 펨토초 레이저 기반의 시간영역 열반사율 기법을 사용하여 열경계저항 값을 실험적으로 구하였으며, 시뮬레이션 결과와 비교·검증하였다. 전자빔 증착기를 사용하여 90nm 두께의 알루미늄 박막을 실리콘(100) 웨이퍼 표면에 증착하였으며, 유한차분법을 이용한 수치해석을 통해 열전도 방정식의 해를 구해 실험결과와 곡선맞춤 함으로써 열경계저항을 정량적으로 평가하고 나노스케일에서의 열전달 현상에 관한 특징을 살펴보았다.