Recently, A N2 gas generator has become a very popular issue in application to semiconductor production process. An experimental study has been carried out to investigate the production performance as a N2 purity and production of N2 gas generator. The N2 gas generator used a small size system with two adsorption towers and an air compressor as flow rate 20 m3/h. The N2 gas generator system size is width 2270 mm, length 850 mm and height 2135mm. An experimental data has been measured as the variation of a adsorption temperature, adsorption pressure and adsorption time. The results indicate that the N2 gas production increase in case of decreasing adsorption temperature, increasing adsorption pressure and decreasing adsorption time. The N2 purity is highest value of 99.93% when the governor orifice diameter is 0.5 mm.