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Comparative Study on Interfacial Traps in Organic Thin-Film Transistors According to Deposition Methods of Organic Semiconductors

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  • URLhttps://db.koreascholar.com/Article/Detail/258010
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한국응용과학기술학회지 (The Korean Society of Applied Science and Technology)
한국응용과학기술학회(구 한국유화학회) (The Korean Society of Applied Science and Technology (KSAST))
초록

We analysed interfacial traps in organic thin-film transistors (TFTs) in which pentacene and 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) organic semiconductors were deposited by means of vacuum-thermal evaporation and drop-coating methods, respectively. The thermally-deposited pentacene film consists of dentritic grains with the average grain size of around 1 ?m, while plate-like crystals over a few hundred microns are observed in the solution-processed TIPS-pentacene film. From the transfer characteristics of both TFTs, lower subthreshold slope of 1.02 V/decade was obtained in the TIPS-pentacene TFT, compared to that (2.63 V/decade) of the pentacene transistor. The interfacial trap density values calculated from the subthreshold slope are about 3.4×1012/cm2 and 9.4×1012/cm2 for the TIPS-pentacene and pentacene TFTs, respectively. Herein, lower subthreshold slope and less interfacial traps in TIPS-pentacene TFTs are attributed to less domain boundaries in the solution-processed TIPS-pentacene film.

저자
  • Jae-Hoon Park
  • Jin-Hyuk Bae