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Effect of Deposition Temperature on the Property of Pyrolytic SiC Fabricated by the FBCVD Method

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한국분말야금학회지 (Journal of Korean Powder Metallurgy Institute)
한국분말재료학회(구 한국분말야금학회) (Korean Powder Metallurgy Institute)
초록

Silicon carbide(SiC) layer is particularly important tri-isotropic (TRISO) coating layers because it acts as a miniature pressure vessel and a diffusion barrier to gaseous and metallic fission products in the TRISO coated particle. The high temperature deposition of SiC layer normally performed at 1500-1650˚C has a negative effect on the property of IPyC layer by increasing its anisotropy. To investigate the feasibility of lower temperature SiC deposition, the influence of deposition temperature on the property of SiC layer are examined in this study. While the SiC layer coated at 1500˚C obtains nearly stoichiometric composition, the composition of the SiC layer coated at 1300-1400˚C shows discrepancy from stoichiometric ratio(1:1). 3-7μm grain size of SiC layer coated at 1500˚C is decreased to sub-micrometer (< 1μm) -2μm grain size when coated at 1400˚C, and further decreased to nano grain size when coated at 1300-1350˚C. Moreover, the high density of SiC layer (≥3.19g/cm3) which is easily obtained at 1500˚C coating is difficult to achieve at lower temperature owing to nano size pores. the density is remarkably decreased with decreasing SiC deposition temperature.

저자
  • 김연구(한국원자력연구원 차세대핵연료개발부) | Kim, Yeon-Ku
  • 김원주( 한국원자력연구원 차세대핵연료개발부) | 김원주
  • 여승환( 한국원자력연구원 차세대핵연료개발부) | 여승환
  • 조문성( 한국원자력연구원 차세대핵연료개발부) | 조문성