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Removal of Organic Wax and Particles on Final Polished Wafer by Ozonated DI Water KCI 등재 SCOPUS
- 언어ENG
- URLhttps://db.koreascholar.com/Article/Detail/296855
pp.307-312
In this study, a new cleaning process with a low cost of ownership (CoO) was developed with ozonated DI water (DIO3). An ozone concentration of 40 ppm at room temperature was used to remove organic wax film and particles. Wax residues thicker than 200 Å remained after only a commercial dewaxer treatment. A DIO3 treatment in place of a dewaxer showed a low removal rate on a thick wax layer of 8000 Å due to the diffusion-limited reaction of ozone. A dewaxer was combined with a DIO3 rinse to reduce the wax removal time and remove wax residue completely. Replacing DI rinse with the DIO3 rinse resulted in a surface with a contact angle of less than 5˚, which indicates no further cleaning steps would be required. The particle removal efficiency (PRE) was further improved by combining a SC-1 cleaning step with the DIO3 rinsing process. A reduction in the process time was obtained by introducing DIO3 cleaning with a dewaxing process.
