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Effect of Post-CMP Cleaning On Electrochemical Characteristics of Cu and Ti in Patterned Wafer KCI 등재 SCOPUS
- 언어ENG
- URLhttps://db.koreascholar.com/Article/Detail/296953
pp.174-178
The effects of post-CMP cleaning on the chemical and galvanic corrosion of copper (Cu) and titanium(Ti) were studied in patterned silicon (Si) wafers. First, variation of the corrosion rate was investigated as afunction of the concentration of citric acid that was included in both the CMP slurry and the post-CMP solution.The open circuit potential (OCP) of Cu decreased as the citric acid concentration increased. In contrast withCu, the OCP of titanium (Ti) increased as this concentration increased. The gap in the OCP between Cu andTi increased as citric acid concentration increased, which increased the galvanic corrosion rate between Cu andTi. The corrosion rates of Cu showed a linear relationship with the concentrations of citric acid. Second, theeffect of Triton X-100®, a nonionic surfactant, in a post-CMP solution on the electrochemical characteristics ofthe specimens was also investigated. The OCP of Cu decreased as the surfactant concentration increased. Incontrast with Cu, the OCP of Ti increased greatly as this concentration increased. Given that Triton X-100®changes its micelle structure according to its concentration in the solution, the corrosion rate of eachconcentration was tested.
