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실리콘 wafer sludge로부터 얻어진 SiC의 단광화 기술 KCI 등재

Briquetting of Waste Silicon Carbide Obtained from Silicon Wafer Sludges

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한국분말야금학회지 (Journal of Korean Powder Metallurgy Institute)
한국분말재료학회(구 한국분말야금학회) (Korean Powder Metallurgy Institute)
초록

Waste SiC powders obtained from silicon wafer sludge have very low density and a narrow particle size distribution of 10-20 μm. A scarce yield of C and Si is expected when SiC powders are incorporated into the Fe melt without briquetting. Here, the briquetting variables of the SiC powders are studied as a function of the sintering temperature, pressure, and type and contents of the binders to improve the yield. It is experimentally confirmed that Si and C from the sintered briquette can be incorporated effectively into the Fe melt when the waste SiC powders milled for 30 min with 20 wt.% Fe binder are sintered at 1100oC upon compaction using a pressure of 250 MPa. XRF-WDS analysis shows that an yield of about 90% is obtained when the SiC briquette is kept in the Fe melt at 1650oC for more than 1 h.

저자
  • 구성모(부산대학교 나노과학기술대학 나노융합기술학과) | Seong Mo Koo
  • 윤수종(부산대학교 나노과학기술대학 나노융합기술학과) | Su Jong Yoon
  • 김혜성(부산대학교 나노과학기술대학 나노융합기술학과) | Hye Sung Kim Corresponding Author