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Fabrication and Characterization of High Luminance WOLED Using Single Host and Three Color Dopants

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한국재료학회지 (Korean Journal of Materials Research)
한국재료학회 (Materials Research Society Of Korea)
초록

White organic light-emitting diodes with a structure of indium-tin-oxide [ITO]/ N,N-diphenyl-N,N-bis-[4-(phenylm- tolvlamino)-phenyl]-biphenyl-4,4-diamine [DNTPD]/ [2,3-f:2, 2-h]quinoxaline-2,3,6,7,10,11-hexacarbonitrile [HATCN]/ 1,1- bis(di-4-poly-aminophenyl) cyclo -hexane [TAPC]/ emission layers doped with three color dopants/ 4,7-diphenyl-1,10- phenanthroline [Bphen]/ Cs2CO3/ Al were fabricated and evaluated. In the emission layer [EML], N,N-dicarbazolyl-3,5-benzene [mCP] was used as a single host and bis(2-phenyl quinolinato)-acetylacetonate iridium(III) [Ir(pq)2acac]/ fac-tris(2- phenylpyridinato) iridium(III) [Ir(ppy)3]/ iridium(III) bis[(4,6-di-fluoropheny)-pyridinato-N,C2] picolinate [FIrpic] were used as red/green/blue dopants, respectively. The fabricated devices were divided into five types (D1, D2, D3, D4, D5) according to the structure of the emission layer. The electroluminescence spectra showed three peak emissions at the wavelengths of blue (472~473 nm), green (495~500 nm), and red (589~595 nm). Among the fabricated devices, the device of D1 doped in a mixed fashion with a single emission layer showed the highest values of luminance and quantum efficiency at the given voltage. However, the emission color of D1 was not pure white but orange, with Commission Internationale de L'Eclairage [CIE] coordinates of (x = 0.41~0.45, y = 0.41) depending on the applied voltages. On the other hand, device D5, with a double emission layer of mCP:[Ir(pq)2acac(3%) +Ir(ppy)3(0.5%)]/ mCP:[FIrpic(10%)], showed a nearly pure white color with CIE coordinates of (x = 0.34~0.35, y = 0.35~0.37) under applied voltage in the range of 6~10 V. The luminance and quantum efficiency of D5 were 17,160 cd/m2 and 3.8% at 10 V, respectively.

저자
  • 김민영(백석문화대학교 컴퓨터학공부) | Min Young Kim
  • 이준호(단국대학교 전자공학과) | Jun Ho Lee
  • 장지근(단국대학교 전자공학과) | Ji Geun Jang Corresponding author