We present proton-induced single event effects (SEEs) and γ-ray-induced total ionizing dose (TID) data for 1 Gbit lowpower double data rate synchronous dynamic random access memory (LPDDR SDRAM) fabricated on a 5 μm epitaxial layer (54 nm complementary metal-oxide-semiconductor (CMOS) technology). We compare our radiation tolerance data for LPDDR SDRAM with those of general DDR SDRAM. The data confirms that our devices under test (DUTs) are potential candidates for space flight applications.

1. INTRODUCTION
 2. DEVICE UNDER TEST (DUT) PREPARATION
 3. TEST EQUIPMENT
 4. TEST FACILITY
  4.1 Proton-induced SEE Test Facility
  4.2 γ-ray-induced TID Test Facility
 5. TEST DESCRIPTION
  5.1 Proton-induced SEE Test
  5.2 γ-ray-induced TID Test
 6. DATA ANALYSIS
  6.1 Proton-induced SEE Performance
  6.2 γ-ray-induced TID Degradation
 7. CONCLUSION
 REFERENCES

• Mi Young Park(Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea) Corresponding Author
• Jang-Soo Chae(Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea)
• Chol Lee(Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea)
• Jungsu Lee(Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea)
• Im Hyu Shin(Korea Advanced Institute of Science and Technology, Daejeon 34141, Korea)
• Ji Eun Kim(Korea Polar Research Institute, Incheon 21990, Korea)