The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, (CH3)2Si(OCH3)2, and CxHyOz by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.

1. Introduction
 2. Experimental Procedure
 3. Results and Discussion
 4. Conclusions
 References

• Woojin Lee(Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., LTD)
• Atsuki Fukazawa(ASM Japan K.K., R&D Process Development, 23-1, 6-chome, Nagayama, Tama-shi, Tokyo 206-0025, Japan)
• Yong-Ho Choa(Functional Nano-Materials Research Lab, Department of Chemical Engineering, Hanyang University) Corresponding author