Graphene was grown on molybdenum (Mo) foil by a chemical vapor deposition method at different growth temperatures (1000°C, 1100°C, and 1200°C). The properties of graphene were investigated by X-ray diffraction (XRD), X-ray photoelectron spectroscopy, and Raman spectroscopy. The results showed that the quality of the deposited graphene layer was affected by the growth temperature. XRD results showed the presence of a carbide phase on the Mo surface; the presence of carbide was more intense at 1200°C. Additionally, a higher I2D/IG ratio (0.418) was observed at 1200°C, which implies that there are fewer graphene layers at this temperature. The lowest ID/IG ratio (0.908) for the graphene layers was obtained at 1200°C, suggesting that graphene had fewer defects at this temperature. The size of the graphene domains was also calculated. We found that by increasing the growth temperature, the graphene domain size also increased.

• Samira Naghdi(Department of Physics, Bu-Ali Sina University, Hamedan 65174, Iran. Department of Mechanical Engineering, College of Engineering, Kyung Hee University, Yongin 17104, Korea)
• Kyong Yop Rhee(Department of Mechanical Engineering, College of Engineering, Kyung Hee University, Yongin 17104, Korea) Corresponding Author
• Man Tae Kim(Airworthiness Certification Team, Defense Agency for Technology and Quality, Jinju 52851, Korea)
• Babak Jaleh(Department of Physics, Bu-Ali Sina University, Hamedan 65174, Iran)
• Soo Jin Park(Department of Chemistry, College of Natural Science, Inha University, Incheon 22212, Korea) Corresponding Author